DE68904343D1 - Bipolarer transistor mit isolierter steuerelektrode. - Google Patents

Bipolarer transistor mit isolierter steuerelektrode.

Info

Publication number
DE68904343D1
DE68904343D1 DE8989105833T DE68904343T DE68904343D1 DE 68904343 D1 DE68904343 D1 DE 68904343D1 DE 8989105833 T DE8989105833 T DE 8989105833T DE 68904343 T DE68904343 T DE 68904343T DE 68904343 D1 DE68904343 D1 DE 68904343D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
control electrode
insulated control
insulated
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989105833T
Other languages
English (en)
Other versions
DE68904343T2 (de
Inventor
Naoki Sakurai
Mutsuhiro Mori
Tomoyuki Tanaka
Yasumichi Yasuda
Yasunori Nakano
Tsutomu Yatsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE68904343D1 publication Critical patent/DE68904343D1/de
Publication of DE68904343T2 publication Critical patent/DE68904343T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
DE1989604343 1988-04-01 1989-04-03 Bipolarer transistor mit isolierter steuerelektrode. Expired - Fee Related DE68904343T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63078028A JPH07120799B2 (ja) 1988-04-01 1988-04-01 半導体装置

Publications (2)

Publication Number Publication Date
DE68904343D1 true DE68904343D1 (de) 1993-02-25
DE68904343T2 DE68904343T2 (de) 1993-06-09

Family

ID=13650358

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989604343 Expired - Fee Related DE68904343T2 (de) 1988-04-01 1989-04-03 Bipolarer transistor mit isolierter steuerelektrode.

Country Status (3)

Country Link
EP (1) EP0338312B1 (de)
JP (1) JPH07120799B2 (de)
DE (1) DE68904343T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0716009B2 (ja) * 1988-12-02 1995-02-22 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
GB8901342D0 (en) * 1989-01-21 1989-03-15 Lucas Ind Plc Semiconductor device
DE4006886A1 (de) * 1989-03-06 1990-09-13 Fuji Electric Co Ltd Halbleiter-vorrichtung mit einem mis-feldeffekt-transistor von der art einer leitfaehigkeits-modulation
DE69034136T2 (de) * 1989-08-31 2005-01-20 Denso Corp., Kariya Bipolarer transistor mit isolierter steuerelektrode
JP2720574B2 (ja) * 1990-05-11 1998-03-04 富士電機株式会社 デュアルゲート型絶縁ゲートバイポーラトランジスタ
JP3085037B2 (ja) * 1993-08-18 2000-09-04 富士電機株式会社 絶縁ゲートバイポーラトランジスタ
JP3255547B2 (ja) * 1994-03-09 2002-02-12 株式会社東芝 絶縁ゲート付きサイリスタ
DE19539021A1 (de) * 1995-10-19 1997-04-24 Siemens Ag Feldgesteuerter Bipolartransistor
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
DE19828669C2 (de) 1998-06-26 2003-08-21 Infineon Technologies Ag Lateraler IGBT in SOI-Bauweise und Verfahren zur Herstellung
DE19906384A1 (de) 1999-02-16 2000-08-24 Siemens Ag IGBT mit PN-Isolation
DE102004028474B4 (de) * 2004-06-11 2009-04-09 X-Fab Semiconductor Foundries Ag Integriertes Bauelement in einer SOI-Scheibe

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning
EP0099926B1 (de) * 1982-02-09 1987-01-21 Western Electric Company, Incorporated Feldeffekt gesteuerter lateraler zweiwegthyristor
EP0111803B1 (de) * 1982-12-13 1989-03-01 General Electric Company Laterale Gleichrichter mit isoliertem Gate
CA1200322A (en) * 1982-12-13 1986-02-04 General Electric Company Bidirectional insulated-gate rectifier structures and method of operation
EP0144654A3 (de) * 1983-11-03 1987-10-07 General Electric Company Halbleiteranordnung mit dielektrisch isoliertem Feldeffekttransistor mit isoliertem Gate
JPS60260152A (ja) * 1984-06-07 1985-12-23 Nec Corp 半導体装置
JPS6124278A (ja) * 1984-07-13 1986-02-01 Toshiba Corp 絶縁ゲ−ト形半導体装置
JPH0779164B2 (ja) * 1986-01-30 1995-08-23 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
EP0338312B1 (de) 1993-01-13
DE68904343T2 (de) 1993-06-09
JPH01253278A (ja) 1989-10-09
EP0338312A3 (en) 1990-03-21
EP0338312A2 (de) 1989-10-25
JPH07120799B2 (ja) 1995-12-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee