DE69222380T2 - Lateraler, bipolarer Transistor mit isolierter Steuerelektrode und entsprechende Mehrfachanordnung - Google Patents

Lateraler, bipolarer Transistor mit isolierter Steuerelektrode und entsprechende Mehrfachanordnung

Info

Publication number
DE69222380T2
DE69222380T2 DE69222380T DE69222380T DE69222380T2 DE 69222380 T2 DE69222380 T2 DE 69222380T2 DE 69222380 T DE69222380 T DE 69222380T DE 69222380 T DE69222380 T DE 69222380T DE 69222380 T2 DE69222380 T2 DE 69222380T2
Authority
DE
Germany
Prior art keywords
lateral
bipolar transistor
control electrode
corresponding multiple
multiple arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69222380T
Other languages
English (en)
Other versions
DE69222380D1 (de
Inventor
Tosifumi Oohata
Mutsuhiro Mori
Naoki Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69222380D1 publication Critical patent/DE69222380D1/de
Application granted granted Critical
Publication of DE69222380T2 publication Critical patent/DE69222380T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
DE69222380T 1991-07-25 1992-07-15 Lateraler, bipolarer Transistor mit isolierter Steuerelektrode und entsprechende Mehrfachanordnung Expired - Fee Related DE69222380T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3186106A JP2650519B2 (ja) 1991-07-25 1991-07-25 横型絶縁ゲートトランジスタ

Publications (2)

Publication Number Publication Date
DE69222380D1 DE69222380D1 (de) 1997-10-30
DE69222380T2 true DE69222380T2 (de) 1998-04-30

Family

ID=16182470

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69222380T Expired - Fee Related DE69222380T2 (de) 1991-07-25 1992-07-15 Lateraler, bipolarer Transistor mit isolierter Steuerelektrode und entsprechende Mehrfachanordnung

Country Status (5)

Country Link
US (1) US5343052A (de)
EP (1) EP0526037B1 (de)
JP (1) JP2650519B2 (de)
KR (1) KR100281251B1 (de)
DE (1) DE69222380T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206469A (ja) * 1992-01-29 1993-08-13 Hitachi Ltd 絶縁ゲート型バイポーラトランジスタ
EP0761016B1 (de) * 1995-03-23 2002-10-16 Koninklijke Philips Electronics N.V. Halbleiteranordnung mit einem ligbt element
JP3581447B2 (ja) * 1995-08-22 2004-10-27 三菱電機株式会社 高耐圧半導体装置
SE509780C2 (sv) * 1997-07-04 1999-03-08 Ericsson Telefon Ab L M Bipolär effekttransistor och framställningsförfarande
JP3382172B2 (ja) 1999-02-04 2003-03-04 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
US7230271B2 (en) * 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
US7067970B2 (en) * 2002-09-30 2006-06-27 Ngk Insulators, Ltd. Light emitting device
JP2004146364A (ja) * 2002-09-30 2004-05-20 Ngk Insulators Ltd 発光素子及びそれを具えるフィールドエミッションディスプレイ
US7202504B2 (en) 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
US7045830B1 (en) 2004-12-07 2006-05-16 Fairchild Semiconductor Corporation High-voltage diodes formed in advanced power integrated circuit devices
US7329566B2 (en) 2005-05-31 2008-02-12 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7244989B2 (en) * 2005-06-02 2007-07-17 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7180158B2 (en) * 2005-06-02 2007-02-20 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
JP5208591B2 (ja) 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
US8020128B2 (en) 2009-06-29 2011-09-13 International Business Machines Corporation Scaling of bipolar transistors
US8119522B1 (en) 2010-11-08 2012-02-21 International Business Machines Corporation Method of fabricating damascene structures
TWI489601B (zh) * 2011-05-03 2015-06-21 Ind Tech Res Inst 電子元件封裝結構
JP6284336B2 (ja) 2013-10-17 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
US9905558B1 (en) 2016-12-22 2018-02-27 Texas Instruments Incorporated Conductivity modulated drain extended MOSFET

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933740A (en) * 1986-11-26 1990-06-12 General Electric Company Insulated gate transistor with vertical integral diode and method of fabrication
US4717679A (en) * 1986-11-26 1988-01-05 General Electric Company Minimal mask process for fabricating a lateral insulated gate semiconductor device
JPS63173365A (ja) * 1986-11-26 1988-07-16 ゼネラル・エレクトリック・カンパニイ ラテラル形絶縁ゲート半導体装置とその製法
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPH02208952A (ja) * 1989-02-08 1990-08-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0793434B2 (ja) * 1989-05-23 1995-10-09 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JPH0529614A (ja) 1993-02-05
US5343052A (en) 1994-08-30
EP0526037A1 (de) 1993-02-03
DE69222380D1 (de) 1997-10-30
EP0526037B1 (de) 1997-09-24
JP2650519B2 (ja) 1997-09-03
KR930003420A (ko) 1993-02-24
KR100281251B1 (ko) 2001-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee