DE69112561T2 - Feldeffekttransistor mit verteilter Schwellenspannung. - Google Patents

Feldeffekttransistor mit verteilter Schwellenspannung.

Info

Publication number
DE69112561T2
DE69112561T2 DE69112561T DE69112561T DE69112561T2 DE 69112561 T2 DE69112561 T2 DE 69112561T2 DE 69112561 T DE69112561 T DE 69112561T DE 69112561 T DE69112561 T DE 69112561T DE 69112561 T2 DE69112561 T2 DE 69112561T2
Authority
DE
Germany
Prior art keywords
threshold voltage
field effect
effect transistor
distributed threshold
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112561T
Other languages
English (en)
Other versions
DE69112561D1 (de
Inventor
Berkel Cornelis Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69112561D1 publication Critical patent/DE69112561D1/de
Publication of DE69112561T2 publication Critical patent/DE69112561T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69112561T 1990-10-04 1991-09-26 Feldeffekttransistor mit verteilter Schwellenspannung. Expired - Fee Related DE69112561T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2267237A JPH04144166A (ja) 1990-10-04 1990-10-04 分布しきい値型電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE69112561D1 DE69112561D1 (de) 1995-10-05
DE69112561T2 true DE69112561T2 (de) 1996-04-18

Family

ID=17442044

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112561T Expired - Fee Related DE69112561T2 (de) 1990-10-04 1991-09-26 Feldeffekttransistor mit verteilter Schwellenspannung.

Country Status (4)

Country Link
US (1) US5266820A (de)
EP (1) EP0480500B1 (de)
JP (1) JPH04144166A (de)
DE (1) DE69112561T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69501381T2 (de) * 1994-05-06 1998-06-25 Philips Electronics Nv Halbleitergerät
US5763924A (en) * 1996-05-09 1998-06-09 Linear Technology Corporation Circuits and methods for compensating non-linear capacitances to minimize harmonic distortion
JPH10116964A (ja) * 1996-10-09 1998-05-06 Oki Electric Ind Co Ltd 半導体装置とその製造方法およびスパッタリング装置
US6507044B1 (en) * 1999-03-25 2003-01-14 Advanced Micro Devices, Inc. Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication
US10347667B2 (en) * 2017-07-26 2019-07-09 International Business Machines Corporation Thin-film negative differential resistance and neuronal circuit
CN116500774B (zh) * 2022-01-19 2023-10-31 荣耀终端有限公司 电润湿基板、电润湿显示面板及电润湿显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599735A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp クロツク発生回路
US5113091A (en) * 1988-05-20 1992-05-12 Texas Instruments Incorporated Apparatus and method for comparing signals

Also Published As

Publication number Publication date
EP0480500B1 (de) 1995-08-30
EP0480500A1 (de) 1992-04-15
US5266820A (en) 1993-11-30
JPH04144166A (ja) 1992-05-18
DE69112561D1 (de) 1995-10-05

Similar Documents

Publication Publication Date Title
DE69029180T2 (de) Transistor mit Spannungsbegrenzungsanordnung
DE69517370D1 (de) Hochleistungs-Sperrschichttransistor mit niedriger Schwellenspannung
DE69003321D1 (de) MOS-integrierte Schaltung mit regelbarer Schwellspannung.
DE69223706T2 (de) Feldeffekttransistor
DE69201436D1 (de) Quantentopf-Transistor mit resonantem Tunneleffekt.
DE69113571T2 (de) MIS-Transistor mit Heteroübergang.
DE69116076T2 (de) Heterostruktur-Feldeffekttransistor
DE69201008T2 (de) Thermoplastische Elastomerzusammensetzung.
DE69114347D1 (de) Spannungsregler mit aktivem Sperren.
DE69109238T2 (de) Feldeffekttransistor.
DE69317562T2 (de) Halbleiteranordnung mit doppelgate.
DE69114628T2 (de) Rücklauftransistor.
DE69112561T2 (de) Feldeffekttransistor mit verteilter Schwellenspannung.
DE462040T1 (de) Mos-transistor mit hoher schwellspannung.
DE69314292D1 (de) Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft
DE69223945D1 (de) Leistung feldeffekt transistor mit geringer schwellspannung
DE69208297D1 (de) Feldeffekttransistor
DE69201708T2 (de) Feldeffekttransistor.
DE3780895T2 (de) Komplementaerer feldeffekt-transistor mit isoliertem gate.
DE59205727D1 (de) Hochspannungstransistor
DE69108424T2 (de) Spannungsgesteuerter Widerstand.
DE68909621D1 (de) Ladungsverstärkerschaltung mit Junction-Feldeffekttransistor.
DE3787010D1 (de) Feldeffekttransistor mit heterouebergang.
DE69117441T2 (de) Feldeffektransistor
DE69412974D1 (de) Feldeffekttransistor mit Kontaktflächen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee