DE69112561D1 - Feldeffekttransistor mit verteilter Schwellenspannung. - Google Patents
Feldeffekttransistor mit verteilter Schwellenspannung.Info
- Publication number
- DE69112561D1 DE69112561D1 DE69112561T DE69112561T DE69112561D1 DE 69112561 D1 DE69112561 D1 DE 69112561D1 DE 69112561 T DE69112561 T DE 69112561T DE 69112561 T DE69112561 T DE 69112561T DE 69112561 D1 DE69112561 D1 DE 69112561D1
- Authority
- DE
- Germany
- Prior art keywords
- threshold voltage
- field effect
- effect transistor
- distributed threshold
- distributed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2267237A JPH04144166A (ja) | 1990-10-04 | 1990-10-04 | 分布しきい値型電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69112561D1 true DE69112561D1 (de) | 1995-10-05 |
DE69112561T2 DE69112561T2 (de) | 1996-04-18 |
Family
ID=17442044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69112561T Expired - Fee Related DE69112561T2 (de) | 1990-10-04 | 1991-09-26 | Feldeffekttransistor mit verteilter Schwellenspannung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5266820A (de) |
EP (1) | EP0480500B1 (de) |
JP (1) | JPH04144166A (de) |
DE (1) | DE69112561T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2166555A1 (en) * | 1994-05-06 | 1995-11-16 | Franciscus Petrus Widdershoven | Semiconductor device |
US5763924A (en) * | 1996-05-09 | 1998-06-09 | Linear Technology Corporation | Circuits and methods for compensating non-linear capacitances to minimize harmonic distortion |
JPH10116964A (ja) | 1996-10-09 | 1998-05-06 | Oki Electric Ind Co Ltd | 半導体装置とその製造方法およびスパッタリング装置 |
US6507044B1 (en) * | 1999-03-25 | 2003-01-14 | Advanced Micro Devices, Inc. | Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication |
US10347667B2 (en) * | 2017-07-26 | 2019-07-09 | International Business Machines Corporation | Thin-film negative differential resistance and neuronal circuit |
CN116500774B (zh) * | 2022-01-19 | 2023-10-31 | 荣耀终端有限公司 | 电润湿基板、电润湿显示面板及电润湿显示装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS599735A (ja) * | 1982-07-07 | 1984-01-19 | Mitsubishi Electric Corp | クロツク発生回路 |
US5113091A (en) * | 1988-05-20 | 1992-05-12 | Texas Instruments Incorporated | Apparatus and method for comparing signals |
-
1990
- 1990-10-04 JP JP2267237A patent/JPH04144166A/ja active Pending
-
1991
- 1991-09-26 DE DE69112561T patent/DE69112561T2/de not_active Expired - Fee Related
- 1991-09-26 EP EP91202497A patent/EP0480500B1/de not_active Expired - Lifetime
- 1991-09-30 US US07/769,919 patent/US5266820A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0480500A1 (de) | 1992-04-15 |
EP0480500B1 (de) | 1995-08-30 |
JPH04144166A (ja) | 1992-05-18 |
DE69112561T2 (de) | 1996-04-18 |
US5266820A (en) | 1993-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69029180D1 (de) | Transistor mit Spannungsbegrenzungsanordnung | |
DE69517370D1 (de) | Hochleistungs-Sperrschichttransistor mit niedriger Schwellenspannung | |
DE69003321D1 (de) | MOS-integrierte Schaltung mit regelbarer Schwellspannung. | |
DE69223706D1 (de) | Feldeffekttransistor | |
DE3679971D1 (de) | Modulationsdotierter feldeffekttransistor. | |
DE69205766D1 (de) | Organischer Feldeffekttransistor. | |
DE69221942D1 (de) | Elektrochirurgisches H.F.-Gerät mit konstanter Spannung | |
DE69103525D1 (de) | Unterlagscheibe mit direkter spannungsanzeige. | |
DE69201436D1 (de) | Quantentopf-Transistor mit resonantem Tunneleffekt. | |
DE69127849D1 (de) | Bipolarer Transistor | |
DE3381069D1 (de) | Feldeffekttransistor mit modulierter beweglichkeit. | |
DE69116076D1 (de) | Heterostruktur-Feldeffekttransistor | |
DE69113571D1 (de) | MIS-Transistor mit Heteroübergang. | |
DE69201008D1 (de) | Thermoplastische Elastomerzusammensetzung. | |
DE69114347D1 (de) | Spannungsregler mit aktivem Sperren. | |
DE69109238D1 (de) | Feldeffekttransistor. | |
DE69117866D1 (de) | Heteroübergangsfeldeffekttransistor | |
DE69317562D1 (de) | Halbleiteranordnung mit doppelgate. | |
DE69508826D1 (de) | Konstantstromquelle mit Feldeffekttransistor | |
DE69106986D1 (de) | Hochspannungsschalter mit Selbstbeblasung. | |
DE69114628D1 (de) | Rücklauftransistor. | |
DE69112561D1 (de) | Feldeffekttransistor mit verteilter Schwellenspannung. | |
DE59201461D1 (de) | Gummilager. | |
DE69314292D1 (de) | Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft | |
DE69223945T2 (de) | Leistung feldeffekt transistor mit geringer schwellspannung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |