DE3381069D1 - Feldeffekttransistor mit modulierter beweglichkeit. - Google Patents
Feldeffekttransistor mit modulierter beweglichkeit.Info
- Publication number
- DE3381069D1 DE3381069D1 DE8383302074T DE3381069T DE3381069D1 DE 3381069 D1 DE3381069 D1 DE 3381069D1 DE 8383302074 T DE8383302074 T DE 8383302074T DE 3381069 T DE3381069 T DE 3381069T DE 3381069 D1 DE3381069 D1 DE 3381069D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- modular mobility
- modular
- mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7727—Velocity modulation transistors, i.e. VMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57062175A JPS58178572A (ja) | 1982-04-14 | 1982-04-14 | 移動度変調形電界効果トランジスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3381069D1 true DE3381069D1 (de) | 1990-02-08 |
Family
ID=13192518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383302074T Expired - Lifetime DE3381069D1 (de) | 1982-04-14 | 1983-04-13 | Feldeffekttransistor mit modulierter beweglichkeit. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4688061A (de) |
EP (1) | EP0091831B1 (de) |
JP (1) | JPS58178572A (de) |
CA (1) | CA1217575A (de) |
DE (1) | DE3381069D1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0810751B2 (ja) * | 1983-12-23 | 1996-01-31 | 株式会社日立製作所 | 半導体装置 |
JPH06105717B2 (ja) * | 1984-01-14 | 1994-12-21 | 富士通株式会社 | 電界効果型半導体装置 |
US4791072A (en) * | 1984-06-15 | 1988-12-13 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for making a complementary device containing MODFET |
JPH0714055B2 (ja) * | 1984-09-03 | 1995-02-15 | 日本電気株式会社 | 電界効果型素子 |
US4745452A (en) * | 1984-09-24 | 1988-05-17 | Massachusetts Institute Of Technology | Tunneling transfer devices |
JPS61174776A (ja) * | 1985-01-30 | 1986-08-06 | Sony Corp | ヘテロ接合電界効果トランジスタ |
JPS62256478A (ja) * | 1986-04-30 | 1987-11-09 | Sumitomo Electric Ind Ltd | 化合物半導体装置 |
FR2600821B1 (fr) * | 1986-06-30 | 1988-12-30 | Thomson Csf | Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative |
US4821093A (en) * | 1986-08-18 | 1989-04-11 | The United States Of America As Represented By The Secretary Of The Army | Dual channel high electron mobility field effect transistor |
US4905059A (en) * | 1986-09-25 | 1990-02-27 | Regents Of The University Of Minnesota | Modulation doped radiation emitting semiconductor device |
WO1988002557A1 (en) * | 1986-09-25 | 1988-04-07 | Regents Of The University Of Minnesota | Modulation doped radiation emitting semiconductor device |
JPS63102374A (ja) * | 1986-09-29 | 1988-05-07 | シーメンス、アクチエンゲゼルシヤフト | 電界効果トランジスタ |
US4882608A (en) * | 1987-02-09 | 1989-11-21 | International Business Machines Corporation | Multilayer semiconductor device having multiple paths of current flow |
US4855797A (en) * | 1987-07-06 | 1989-08-08 | Siemens Corporate Research And Support, Inc. | Modulation doped high electron mobility transistor with n-i-p-i structure |
US4839702A (en) * | 1987-11-20 | 1989-06-13 | Bell Communications Research, Inc. | Semiconductor device based on charge emission from a quantum well |
US4839310A (en) * | 1988-01-27 | 1989-06-13 | Massachusetts Institute Of Technology | High mobility transistor with opposed-gates |
DE3811801A1 (de) * | 1988-04-08 | 1989-10-19 | Siemens Ag | Halbleiter-bauelement, geeignet als extrem schneller schalter |
US5633512A (en) * | 1990-05-23 | 1997-05-27 | Canon Kabushiki Kaisha | Semiconductor device for varying the mobility of electrons by light irradiation |
JP2919581B2 (ja) * | 1990-08-31 | 1999-07-12 | 三洋電機株式会社 | 速度変調トランジスタ |
US5350936A (en) * | 1993-07-19 | 1994-09-27 | Texas Instruments Incorporated | Linear field effect transistor |
CN102437025B (zh) * | 2011-12-02 | 2013-04-24 | 南京大学 | 一种消除pmos中负偏压温度不稳定性影响的方法 |
US10978561B2 (en) | 2017-10-18 | 2021-04-13 | Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) | Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element |
KR102196005B1 (ko) * | 2017-10-18 | 2020-12-30 | 한양대학교 산학협력단 | 막 및 멀티레벨 소자 |
WO2022269366A1 (en) | 2021-06-24 | 2022-12-29 | Marvell Asia Pte Ltd | A network device having transistors employing charge-carrier mobility modulation to drive operation beyond transition frequency |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1418613A (fr) * | 1963-12-30 | 1965-11-19 | Ibm | Dispositif semi-conducteur à jonctions hétérogènes utilisant le transfert de porteurs majoritaires |
US4236167A (en) * | 1978-02-06 | 1980-11-25 | Rca Corporation | Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels |
US4242691A (en) * | 1978-09-18 | 1980-12-30 | Mitsubishi Denki Kabushiki Kaisha | MOS Semiconductor device |
FR2465317A2 (fr) * | 1979-03-28 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
US4257055A (en) * | 1979-07-26 | 1981-03-17 | University Of Illinois Foundation | Negative resistance heterojunction devices |
FR2465318A1 (fr) * | 1979-09-10 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
EP0029481A1 (de) * | 1979-11-26 | 1981-06-03 | International Business Machines Corporation | Feldeffekt-Halbleiterstruktur |
DE3072175D1 (de) * | 1979-12-28 | 1990-04-26 | Fujitsu Ltd | Halbleitervorrichtungen mit heterouebergang. |
FR2489045A1 (fr) * | 1980-08-20 | 1982-02-26 | Thomson Csf | Transistor a effet de champ gaas a memoire non volatile |
-
1982
- 1982-04-14 JP JP57062175A patent/JPS58178572A/ja active Granted
-
1983
- 1983-04-12 CA CA000425702A patent/CA1217575A/en not_active Expired
- 1983-04-13 DE DE8383302074T patent/DE3381069D1/de not_active Expired - Lifetime
- 1983-04-13 US US06/484,600 patent/US4688061A/en not_active Expired - Lifetime
- 1983-04-13 EP EP83302074A patent/EP0091831B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0091831A2 (de) | 1983-10-19 |
US4688061A (en) | 1987-08-18 |
EP0091831A3 (en) | 1986-02-12 |
EP0091831B1 (de) | 1990-01-03 |
JPS58178572A (ja) | 1983-10-19 |
CA1217575A (en) | 1987-02-03 |
JPH0258773B2 (de) | 1990-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3381069D1 (de) | Feldeffekttransistor mit modulierter beweglichkeit. | |
DE3679971D1 (de) | Modulationsdotierter feldeffekttransistor. | |
DE3684400D1 (de) | Verteilte feldeffekttransistorstruktur. | |
DE3382717D1 (de) | Torschaltung mit Feldeffekt- und Bipolartransistoren. | |
IT8320801A0 (it) | Dispositivo massaggiatore. | |
DE3788525D1 (de) | Feldeffekttransistoranordnungen. | |
DE3689433D1 (de) | Feldeffekttransistor. | |
DE3376713D1 (en) | Double heterojunction field effect transistors | |
JPS56152271A (en) | Field effect transistor | |
DE3854677D1 (de) | Komplementäre Feldeffekttransistorstruktur. | |
DE3751098D1 (de) | Feldeffekttransistor. | |
KR860006138A (ko) | 헤테로 접합 전계 효과 트랜지스터 | |
NL189272C (nl) | Bipolaire transistor. | |
DE3782748D1 (de) | Feldeffekttransistor mit isoliertem gate. | |
DE3482355D1 (de) | Feldeffecttransistor mit hoher elektronenbeweglichkeit. | |
IT8024018A0 (it) | Transistori. | |
JPS57104268A (en) | Field effect transistor | |
FI811919L (fi) | Skyddskrets foer transistor | |
DE69109238D1 (de) | Feldeffekttransistor. | |
FI831990A0 (fi) | Oorganiska skum | |
DE3174485D1 (en) | Field effect transistors | |
DE3677141D1 (de) | Feldeffekttransistoranordnung. | |
DE3583064D1 (de) | Supraleitender transistor. | |
DE3688318D1 (de) | Feldeffekttransistor. | |
DE3177128D1 (de) | Integrierbare leistungstransistoranordnung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |