FR1418613A - Dispositif semi-conducteur à jonctions hétérogènes utilisant le transfert de porteurs majoritaires - Google Patents

Dispositif semi-conducteur à jonctions hétérogènes utilisant le transfert de porteurs majoritaires

Info

Publication number
FR1418613A
FR1418613A FR999693A FR999693A FR1418613A FR 1418613 A FR1418613 A FR 1418613A FR 999693 A FR999693 A FR 999693A FR 999693 A FR999693 A FR 999693A FR 1418613 A FR1418613 A FR 1418613A
Authority
FR
France
Prior art keywords
semiconductor device
carrier transfer
majority carrier
heterogeneous junctions
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR999693A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US334517A external-priority patent/US3273030A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR999693A priority Critical patent/FR1418613A/fr
Application granted granted Critical
Publication of FR1418613A publication Critical patent/FR1418613A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR999693A 1963-12-30 1964-12-23 Dispositif semi-conducteur à jonctions hétérogènes utilisant le transfert de porteurs majoritaires Expired FR1418613A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR999693A FR1418613A (fr) 1963-12-30 1964-12-23 Dispositif semi-conducteur à jonctions hétérogènes utilisant le transfert de porteurs majoritaires

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US334517A US3273030A (en) 1963-12-30 1963-12-30 Majority carrier channel device using heterojunctions
FR999693A FR1418613A (fr) 1963-12-30 1964-12-23 Dispositif semi-conducteur à jonctions hétérogènes utilisant le transfert de porteurs majoritaires

Publications (1)

Publication Number Publication Date
FR1418613A true FR1418613A (fr) 1965-11-19

Family

ID=26211981

Family Applications (1)

Application Number Title Priority Date Filing Date
FR999693A Expired FR1418613A (fr) 1963-12-30 1964-12-23 Dispositif semi-conducteur à jonctions hétérogènes utilisant le transfert de porteurs majoritaires

Country Status (1)

Country Link
FR (1) FR1418613A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2388411A1 (fr) * 1977-04-20 1978-11-17 Ibm Dispositif semi-conducteur et son procede de fabrication
EP0067721A2 (fr) * 1981-06-17 1982-12-22 Hitachi, Ltd. Dispositif semiconducteur à hétérojonctions
EP0091831A2 (fr) * 1982-04-14 1983-10-19 Hiroyuki Sakaki Transistor à effet de champ à mobilité modulée

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2388411A1 (fr) * 1977-04-20 1978-11-17 Ibm Dispositif semi-conducteur et son procede de fabrication
EP0067721A2 (fr) * 1981-06-17 1982-12-22 Hitachi, Ltd. Dispositif semiconducteur à hétérojonctions
EP0067721A3 (en) * 1981-06-17 1985-07-31 Hitachi, Ltd. Heterojunction semiconductor device
EP0091831A2 (fr) * 1982-04-14 1983-10-19 Hiroyuki Sakaki Transistor à effet de champ à mobilité modulée
EP0091831A3 (en) * 1982-04-14 1986-02-12 Hiroyuki Sakaki Mobility-modulation field effect transistor

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