WO1988002557A1 - Modulation doped radiation emitting semiconductor device - Google Patents

Modulation doped radiation emitting semiconductor device Download PDF

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Publication number
WO1988002557A1
WO1988002557A1 PCT/US1987/002378 US8702378W WO8802557A1 WO 1988002557 A1 WO1988002557 A1 WO 1988002557A1 US 8702378 W US8702378 W US 8702378W WO 8802557 A1 WO8802557 A1 WO 8802557A1
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WO
WIPO (PCT)
Prior art keywords
layer
gas
semiconductor
active layer
hole
Prior art date
Application number
PCT/US1987/002378
Other languages
French (fr)
Inventor
Michael Shur
Original Assignee
Regents Of The University Of Minnesota
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of WO1988002557A1 publication Critical patent/WO1988002557A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3004—Structure or shape of the active region; Materials used for the active region employing a field effect structure for inducing charge-carriers, e.g. FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Definitions

  • the present invention relates to semiconductor radiation emitting devices.
  • the present invention relates to a semiconductor device which produces radiation based on radiative recombination of electrons from a two-dimensional electron gas with holes from a two-dimensional hole gas induced in the semiconductor device.
  • Light emitting diodes and semiconductor lasers are widely used to. produce radiation, particularly. in the infrared and some portions of the visible part of the electromagnetic spectrum.
  • a light emitting diode makes use of a semiconductor PN junction which is forward biased to emit spontaneous radiation. This radiation is produced by the radiative recombination of holes and electrons within the semiconductor material.
  • the particular wavelength at which the semiconductor device emits depends upon the energy band gap of the semiconductor material, and whether the material is a direct or indirect band gap material.
  • Semiconductor lasers are semiconductor PN junction devices which produce radiation which has spatial and temporal coherence. Selected surfaces of the semiconductor laser are polished, and appropriate dimensions are selected so that the semiconductor device becomes an optical resonator.
  • the present invention is a radiation emitting device in which electron and hole two-dimensional gases are induced into the same semiconductor layer by means of modulation doping.
  • a narrower band gap semiconductor is sandwiched between layers of a wider band gap semiconductor.
  • a pair of gates are used to induce the electron and hole two-dimensional gases.
  • the device preferably includes first and second contact means for making electrical contact with the two-dimensional electron gas and the two-dimensional hole gas, respectively.
  • the first contact means is preferably an N+ region which is in contact with the narrower band gap semiconductor layer, and the second contact means includes a P+ region which is in contact with the narrower band gap semiconductor layer.
  • the thickness of the narrower band gap semiconductor layer is such that an induced PN junction or PIN structure is formed by applying gate voltages.
  • the induced PN junction or PIN structure can be biased like a conventional junction device so that the electrons and holes recombine to produce radiation.
  • BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top view of a modulation doped radiation semiconductor device of the present invention.
  • Fig. 2 is a sectional view along section 2-2 of Fig. 1.
  • Fig. 3 is a sectional view along section 3-3 of Fig. 1.
  • Fig. 4 is a band diagram of the device of
  • radiation emitting semiconductor device 10 is formed on an insulating or semi-insulating substrate 12 and includes a bottom gate 14, a bottom wide band gap semiconductor layer 16, a top wide band gap layer 18, and an intermediate narrower band gap active layer 20 which is sandwiched between top and bottom layers 16 and 18.
  • the top gate 22 is positioned over top layer 18.
  • a pair of N+ regions 24 and 26 are positioned along opposite edges of active layer 20, and are preferably made of a similar or a compatible semiconductor material which is capable of being doped N type.
  • a pair of P+ regions 28 and 30 are positioned along opposite edges of active layer 20.
  • contacts 32 and 34 make ohmic contact to N+ type regions 24 and 26, respectively.
  • contacts 36 and 38 make ohmic contact to P+ regions 28 and 30, respectively. These contacts may be alloyed in to the N+ and P+ region to provide smaller contact resistance.
  • a heterojunction 42 is formed at the interface of bottom layer 16 and active layer 20
  • a heterojunction 44 is formed at the interface of active layer 20 with top layer 18.
  • gates 14 and 22 form Schottky barriers with layers 16 and 18, respectively, although alternatively gates 14 and 22 are made from doped semiconductor material.
  • Gate voltages V G1 and V G2 are applied to gates 14 and 22, respectively to induce the electron and hole two-dimensional (2-d) gases in active layer 20.
  • Gate voltage V G1 is positive with, respect to voltage V 1 .
  • Gate voltage V G2 is negative with respect to voltage V 2 .
  • bottom gate 14 induces a 2-d hole gas 46 in layer 20 adjacent heterojunction 42.
  • Top gate 22 induces 2-d electron gas 48 within layer 20 adjacent heterojunction 44.
  • N+ regions 24 and 26 make electrical contact to 2-d electron gas 48, while P+ regions 28 and 30 make electrical contact to 2-d hole gas 46.
  • N+ contacts 24 and 26 extend into bottom layer 16 and therefore are in physical contact with 2-d hole gas
  • N+ contacts serve as a source of electrons
  • P+ contacts serve as a souce of holes.
  • a typical thickness of a 2-d electron gas or 2-d hole gas is on the order of 100 Angstroms. Therefore, when the thickness of narrow band active layer 20 is equal to or smaller than approximately 200 Angstroms, a field-induced PN junction is formed by applying the gate voltages and inducing the two-dimensional electron and hole gases 48 and 46, respectively.
  • an induced PIN structure is formed by the application of the gate voltages and the inducing of 2-d electron and hole gases 46 and 48.
  • the PIN structure is shown in Figs. 2 and 3, and in the energy band diagram shown in Fig. 4.
  • the induced PN junction or PIN structure can be biased just as a conventional junction, so that the electrons and holes recombine producing radiation.
  • top gate 22 is made of a transparent conducting film such as indium tin oxide
  • device 10 forms a light emitting diode.
  • substrate 12 By choosing an appropriate dimension of substrate 12 and polishing it (so that an optical resonator is formed), device 10 acts as a semiconductor laser.
  • a wide variety of different semiconductor materials can be used for the semiconductor layers 16, 18, and 20.
  • the requirements are that layers 16 and 18 have a larger band gap than active layer 20, so that heterojunctions 42 and 44 are formed.
  • the materials of layers 16 and 18 must be sufficiently compatible with the active layer 20 so that lattice mismatch is not excessive. However, tliese materials need not to be the same.
  • active layer 20 is gallium arsenide (GaAs), while bottom and top layers 16 and 18 are aluminum gallium arsenide (AlGaAs) having a wider band gap than GaAs.
  • GaAs gallium arsenide
  • AlGaAs aluminum gallium arsenide
  • the optical device 10 of the present invention there are several advantages of the optical device 10 of the present invention.
  • Second, the present invention is compatible with relatively wide band semiconductors which are difficult to dope with impurities both N-type and P-type. The difficulty in forming PN junctions by impurity doping has impeded the development of semiconductor lasers (and LEDs) in the visible range and even shorter wavelengths.
  • the present invention overcomes the problems associated with impurity doping because the PN junction or PIN structure is formed by modulation doping (i.e. is field induced) rather than by impurity doping.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

A radiation-emitting semiconductor device (10) (i.e. a LED or laser) emits radiation produced by radiative recombination of electrons from a field induced two-dimensional (2-d) electron gas (48) with holes from a field induced two-dimensional (2-d) hole gas (46). The device (10) uses a narrower band semiconductor active layer (20) sandwiched between two layers (16 and 18) of a wider band semiconductor. Top and bottom gates (22 and 14) are used to induce the electron and hole 2-d gasses (48, 46) in the active layer (20). N+ and P+ (24, 26, 28, and 30) regions are used to contact the 2-d electron and hole gasses (48, 46) to provide separate biasing. The thickness of the active layer (20) is such that a field induced PN junction or PIN structure is formed at which radiative recombination can occur.

Description

MODULATION DOPED RADIATION EMITTING SEMICONDUCTOR DEVICE BACKGROUND OF THE INVENTION 1. Field of the Invention. The present invention relates to semiconductor radiation emitting devices. In particular, the present invention relates to a semiconductor device which produces radiation based on radiative recombination of electrons from a two-dimensional electron gas with holes from a two-dimensional hole gas induced in the semiconductor device.
2. Description of the Prior Art.
Light emitting diodes and semiconductor lasers are widely used to. produce radiation, particularly. in the infrared and some portions of the visible part of the electromagnetic spectrum. A light emitting diode makes use of a semiconductor PN junction which is forward biased to emit spontaneous radiation. This radiation is produced by the radiative recombination of holes and electrons within the semiconductor material. The particular wavelength at which the semiconductor device emits depends upon the energy band gap of the semiconductor material, and whether the material is a direct or indirect band gap material.
Semiconductor lasers are semiconductor PN junction devices which produce radiation which has spatial and temporal coherence. Selected surfaces of the semiconductor laser are polished, and appropriate dimensions are selected so that the semiconductor device becomes an optical resonator.
There have been continuing research efforts expended on the development of light emitting diodes and lasers using semiconductor materials having energy gaps compatible with the shorter wavelength portions of the visible spectrum, the UV spectrum and beyond. The development of light emitting diodes and semiconductor lasers in these portions of the spectrum, however, has trailed the development of devices in the infrared and longer wavelength visible spectrum because of numerous problems with the semiconductor materials themselves. One problem is the tendency of wider band gap materials to be non-amphoteric (i.e. the materials can only be impurity doped one conductivity type). For example, zinc selenide can be doped N-type but P-type doping is extremely difficult. Other materials have, to date, been capable of impurity doping in only one conductivity type. This, of course, has in the past precluded the use of those materials as a PN junction light emitting diode or semiconductor laser.
In addition, the use of impurity doping in order to produce PN junctions creates traps in the device which permit non-radiative recombination. This decreases the amount of radiation which can be emitted, and thus decreases the efficiency of the device and limits its output power. SUMMARY OF THE INVENTION
The present invention is a radiation emitting device in which electron and hole two-dimensional gases are induced into the same semiconductor layer by means of modulation doping. In this device, a narrower band gap semiconductor is sandwiched between layers of a wider band gap semiconductor. A pair of gates are used to induce the electron and hole two-dimensional gases. In addition, the device preferably includes first and second contact means for making electrical contact with the two-dimensional electron gas and the two-dimensional hole gas, respectively. The first contact means is preferably an N+ region which is in contact with the narrower band gap semiconductor layer, and the second contact means includes a P+ region which is in contact with the narrower band gap semiconductor layer. With the device of the present invention, the thickness of the narrower band gap semiconductor layer is such that an induced PN junction or PIN structure is formed by applying gate voltages. The induced PN junction or PIN structure can be biased like a conventional junction device so that the electrons and holes recombine to produce radiation. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top view of a modulation doped radiation semiconductor device of the present invention.
Fig. 2 is a sectional view along section 2-2 of Fig. 1.
Fig. 3 is a sectional view along section 3-3 of Fig. 1. Fig. 4 is a band diagram of the device of
Figs. 1-3.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
As shown in Figs. 1-3, radiation emitting semiconductor device 10 is formed on an insulating or semi-insulating substrate 12 and includes a bottom gate 14, a bottom wide band gap semiconductor layer 16, a top wide band gap layer 18, and an intermediate narrower band gap active layer 20 which is sandwiched between top and bottom layers 16 and 18. The top gate 22 is positioned over top layer 18.
A pair of N+ regions 24 and 26 are positioned along opposite edges of active layer 20, and are preferably made of a similar or a compatible semiconductor material which is capable of being doped N type. A pair of P+ regions 28 and 30 are positioned along opposite edges of active layer 20.
Electrical contacts 32 and 34 make ohmic contact to N+ type regions 24 and 26, respectively. Similarly, contacts 36 and 38 make ohmic contact to P+ regions 28 and 30, respectively. These contacts may be alloyed in to the N+ and P+ region to provide smaller contact resistance. Because of the difference in band gap between active layer 20 and bottom and top layers 16 and 18, a heterojunction 42 is formed at the interface of bottom layer 16 and active layer 20, and a heterojunction 44 is formed at the interface of active layer 20 with top layer 18. In a preferred embodiment, gates 14 and 22 form Schottky barriers with layers 16 and 18, respectively, although alternatively gates 14 and 22 are made from doped semiconductor material. Gate voltages VG1 and VG2 are applied to gates 14 and 22, respectively to induce the electron and hole two-dimensional (2-d) gases in active layer 20. Gate voltage VG1 is positive with, respect to voltage V1. Gate voltage VG2 is negative with respect to voltage V2. As shown in Figs. 2 and 3, bottom gate 14 induces a 2-d hole gas 46 in layer 20 adjacent heterojunction 42. Top gate 22 induces 2-d electron gas 48 within layer 20 adjacent heterojunction 44. N+ regions 24 and 26 make electrical contact to 2-d electron gas 48, while P+ regions 28 and 30 make electrical contact to 2-d hole gas 46. Although
N+ contacts 24 and 26 extend into bottom layer 16 and therefore are in physical contact with 2-d hole gas
46, they form a PN junction. Similarly, P+ regions
28 and 30 form a PN junction with 2-d electron gas
48. This provides the possibility of separately biasing the N+ contacts 32 and 34 with bias voltage V1 and the P+ contacts 36 and 38 with bias voltage
V2. N+ contacts serve as a source of electrons, P+ contacts serve as a souce of holes.
A typical thickness of a 2-d electron gas or 2-d hole gas is on the order of 100 Angstroms. Therefore, when the thickness of narrow band active layer 20 is equal to or smaller than approximately 200 Angstroms, a field-induced PN junction is formed by applying the gate voltages and inducing the two-dimensional electron and hole gases 48 and 46, respectively.
I f the thickness of active layer 20 is greater than about 200 Angstroms, an induced PIN structure is formed by the application of the gate voltages and the inducing of 2-d electron and hole gases 46 and 48. The PIN structure is shown in Figs. 2 and 3, and in the energy band diagram shown in Fig. 4.
The induced PN junction or PIN structure can be biased just as a conventional junction, so that the electrons and holes recombine producing radiation. When top gate 22 is made of a transparent conducting film such as indium tin oxide, device 10 forms a light emitting diode. By choosing an appropriate dimension of substrate 12 and polishing it (so that an optical resonator is formed), device 10 acts as a semiconductor laser.
A wide variety of different semiconductor materials can be used for the semiconductor layers 16, 18, and 20. The requirements are that layers 16 and 18 have a larger band gap than active layer 20, so that heterojunctions 42 and 44 are formed. The materials of layers 16 and 18 must be sufficiently compatible with the active layer 20 so that lattice mismatch is not excessive. However, tliese materials need not to be the same.
In one embodiment of the present invention, active layer 20 is gallium arsenide (GaAs), while bottom and top layers 16 and 18 are aluminum gallium arsenide (AlGaAs) having a wider band gap than GaAs.
There are several advantages of the optical device 10 of the present invention. First, the absence of impurities and related traps in active layer 20 leads to an increase in the carrier lifetime and, hence, to. a decrease in non-radiative recombination. This, in turn, improves light emitting diode efficiency and leads to a decrease in the threshold current for the stimulated emission. Second, the present invention is compatible with relatively wide band semiconductors which are difficult to dope with impurities both N-type and P-type. The difficulty in forming PN junctions by impurity doping has impeded the development of semiconductor lasers (and LEDs) in the visible range and even shorter wavelengths.
The present invention overcomes the problems associated with impurity doping because the PN junction or PIN structure is formed by modulation doping (i.e. is field induced) rather than by impurity doping.
Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention.

Claims

WHAT IS CLAIMED IS:
1. A radiation emitting semiconductor device comprising: a semiconductor active layer; a first semiconductor layer having a wider band gap than the active layer and forming a first heterojunction with the active layer; a second semiconductor layer having a wider band gap than the active layer and forming a second heterojunction with the active layer; means for inducing a 2-d electron gas proximate the first heterojunction; and means for inducing a 2-d hole gas proximate the second heterojunction.
2. The device of claim 1 and further comprising: means for applying a bias voltage between the 2-d electron gas and the 2-d hole gas to cause radiative recombination of electrons and holes in the active layer.
3. The device of claim 2 wherein the means for applying a bias voltage comprises: first contact means for making electrical contact with the 2-d electrode gas; second contact means for making electrical contact with the 2-d hole gas; and means for applying the bias voltage between the first and second electrical contact means.
4. The device of claim 3 wherein the first electrical contact means comprises an N+ region in contact with the active layer, and the second electrical contact means comprises a P+ region in contact with the active layer.
5. The device of claim 1 wherein the 2-d electron gas and the 2-d hole gas are in contact with one another in the active layer to form an induced PN junction.
6. The device of claim 5 wherein the active layer has a thickness of less than about 200 Angstroms.
7. The device of claim 1. wherein the 2-d electron gas and the 2-d hole gas are spaced apart to form an induced PIN structure in the active layer.
8. The device of claim 1 wherein the means for inducing the 2-d electron gas is a first gate associated with the first semiconductor layer.
9. The device of claim 8 wherein the first gate is a Schottky gate.
10. The device of claim 8 wherein the means for inducing the 2-d hole gas is a second gate associated with the second semiconductor layer.
11. The device of claim 10 wherein the second gate is a Schottky gate.
12. A radiation emitting semiconductor device comprising: first, second and third semiconductor layers arranged with the second layer between the first and third layers, the second layer having a smaller band gap than the first and third layers; a first gate associated with the first layer for inducing a 2-d electron gas in the second layer; a second gate associated with the second layer for inducing a 2-d hole gas in the second layer; the second layer having a thickness such that radiative recombination of electrons from the 2-d electron gas and holes from the 2-d hole gas occurs in the second layer.
13. The device of claim 12 and further comprising: first contact means for making electrical contact with the 2-d electron gas; and second contact means for making electrical contact with the 2-d hole gas.
14. The device of claim 13 and further comprising: means for applying a bias voltage between the first and second contact means.
15. The device of claim 12 wherein the first contact means includes an N+ region in contact with the second layer; and the second contact means includes a P+ region in contact with the second layer.
16. The device of claim 12 wherein the 2-d hole and electron gasses form an induced PN junction in the second layer.
17. The device of claim 12 wherein the 2-d hole and electron gasses form an induced PIN structure in the second layer.
18. The device of claim 12 wherein the first and second gates are Schottky gates.
19. A radiation emitting semiconductor device comprising: a semiconductor body having first, second and third semiconductor layers arranged with the second layer between the first and third layers, the second layer having a smaller band gap than the first and third layers; means for inducing a 2-d electron gas in the second layer; means for inducing a 2-d hole gas in the second layer; first and second N+ regions positioned adjacent first and second opposite edges of the semiconductor body and contacting the 2-d electron gas; and first and second P+ regions positioned adjacent third and fourth opposite edges of the semiconductor body and contacting the 2-d hole gas.
20. The device pf claim 19 wherein the means for inducing a 2-d electron gas is a first gate adjacent the first semiconductor layer; and the means for inducing a 2-d hole gas is a second gate adjacent the third semiconductor layer.
PCT/US1987/002378 1986-09-25 1987-09-21 Modulation doped radiation emitting semiconductor device WO1988002557A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91152086A 1986-09-25 1986-09-25
US911,520 1986-09-25

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4914491A (en) * 1987-11-13 1990-04-03 Kopin Corporation Junction field-effect transistors formed on insulator substrates
US5241190A (en) * 1991-10-17 1993-08-31 At&T Bell Laboratories Apparatus for contacting closely spaced quantum wells and resulting devices
EP1478031A1 (en) * 2002-02-19 2004-11-17 Hoya Corporation Light-emitting device of field-effect transistor type
EP2224500A3 (en) * 2003-07-25 2010-10-27 Hitachi Ltd. Controlled electro-optical device
GB2482308A (en) * 2010-07-28 2012-02-01 Univ Sheffield Super junction silicon devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840888A (en) * 1969-12-30 1974-10-08 Ibm Complementary mosfet device structure
EP0091831A2 (en) * 1982-04-14 1983-10-19 Hiroyuki Sakaki Mobility-modulation field effect transistor
JPS6050979A (en) * 1983-08-30 1985-03-22 Semiconductor Energy Lab Co Ltd Light emitting semiconductor device
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
US4546480A (en) * 1983-08-19 1985-10-08 Xerox Corporation Injection lasers with quantum size effect transparent waveguiding
US4603469A (en) * 1985-03-25 1986-08-05 Gte Laboratories Incorporated Fabrication of complementary modulation-doped filed effect transistors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840888A (en) * 1969-12-30 1974-10-08 Ibm Complementary mosfet device structure
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
EP0091831A2 (en) * 1982-04-14 1983-10-19 Hiroyuki Sakaki Mobility-modulation field effect transistor
US4546480A (en) * 1983-08-19 1985-10-08 Xerox Corporation Injection lasers with quantum size effect transparent waveguiding
JPS6050979A (en) * 1983-08-30 1985-03-22 Semiconductor Energy Lab Co Ltd Light emitting semiconductor device
US4603469A (en) * 1985-03-25 1986-08-05 Gte Laboratories Incorporated Fabrication of complementary modulation-doped filed effect transistors

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4914491A (en) * 1987-11-13 1990-04-03 Kopin Corporation Junction field-effect transistors formed on insulator substrates
US5241190A (en) * 1991-10-17 1993-08-31 At&T Bell Laboratories Apparatus for contacting closely spaced quantum wells and resulting devices
EP1478031A1 (en) * 2002-02-19 2004-11-17 Hoya Corporation Light-emitting device of field-effect transistor type
EP1478031A4 (en) * 2002-02-19 2008-12-03 Hoya Corp Light-emitting device of field-effect transistor type
US7897976B2 (en) 2002-02-19 2011-03-01 Hoya Corporation Light-emitting device of field-effect transistor type
EP2224500A3 (en) * 2003-07-25 2010-10-27 Hitachi Ltd. Controlled electro-optical device
GB2482308A (en) * 2010-07-28 2012-02-01 Univ Sheffield Super junction silicon devices
US9087889B2 (en) 2010-07-28 2015-07-21 The University Of Sheffield Semiconductor devices with 2DEG and 2DHG

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