DE69113571D1 - MIS-Transistor mit Heteroübergang. - Google Patents
MIS-Transistor mit Heteroübergang.Info
- Publication number
- DE69113571D1 DE69113571D1 DE69113571T DE69113571T DE69113571D1 DE 69113571 D1 DE69113571 D1 DE 69113571D1 DE 69113571 T DE69113571 T DE 69113571T DE 69113571 T DE69113571 T DE 69113571T DE 69113571 D1 DE69113571 D1 DE 69113571D1
- Authority
- DE
- Germany
- Prior art keywords
- heterojunction
- mis transistor
- mis
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29212090 | 1990-10-31 | ||
JP29212190 | 1990-10-31 | ||
JP29211990 | 1990-10-31 | ||
JP2145191 | 1991-01-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69113571D1 true DE69113571D1 (de) | 1995-11-09 |
DE69113571T2 DE69113571T2 (de) | 1996-03-28 |
Family
ID=27457583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69113571T Expired - Fee Related DE69113571T2 (de) | 1990-10-31 | 1991-10-30 | MIS-Transistor mit Heteroübergang. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5475244A (de) |
EP (1) | EP0483824B1 (de) |
JP (1) | JP2947654B2 (de) |
CA (1) | CA2054498C (de) |
DE (1) | DE69113571T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5728592A (en) * | 1992-10-09 | 1998-03-17 | Fujitsu Ltd. | Method for fabricating a thin film transistor matrix device |
JP3437863B2 (ja) | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
JPH06310719A (ja) * | 1993-04-19 | 1994-11-04 | Sharp Corp | Ge−SiのSOI型MOSトランジスタ及びその製造方法 |
US5581092A (en) * | 1993-09-07 | 1996-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated semiconductor device |
TW297142B (de) | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
US6777763B1 (en) | 1993-10-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
JP3030368B2 (ja) | 1993-10-01 | 2000-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
KR0135804B1 (ko) * | 1994-06-13 | 1998-04-24 | 김광호 | 실리콘 온 인슐레이터(soi) 트랜지스터 |
JP3361922B2 (ja) * | 1994-09-13 | 2003-01-07 | 株式会社東芝 | 半導体装置 |
JP3243146B2 (ja) | 1994-12-08 | 2002-01-07 | 株式会社東芝 | 半導体装置 |
US5773328A (en) * | 1995-02-28 | 1998-06-30 | Sgs-Thomson Microelectronics, Inc. | Method of making a fully-dielectric-isolated fet |
US6870232B1 (en) * | 1996-07-18 | 2005-03-22 | International Business Machines Corporation | Scalable MOS field effect transistor |
JPH1140811A (ja) | 1997-07-22 | 1999-02-12 | Hitachi Ltd | 半導体装置およびその製造方法 |
US6060749A (en) * | 1998-04-23 | 2000-05-09 | Texas Instruments - Acer Incorporated | Ultra-short channel elevated S/D MOSFETS formed on an ultra-thin SOI substrate |
US6124627A (en) * | 1998-12-03 | 2000-09-26 | Texas Instruments Incorporated | Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region |
US6621131B2 (en) * | 2001-11-01 | 2003-09-16 | Intel Corporation | Semiconductor transistor having a stressed channel |
US7262105B2 (en) * | 2003-11-21 | 2007-08-28 | Freescale Semiconductor, Inc. | Semiconductor device with silicided source/drains |
FR2868207B1 (fr) * | 2004-03-25 | 2006-09-08 | Commissariat Energie Atomique | Transistor a effet de champ a materiaux de source, de drain et de canal adaptes et circuit integre comportant un tel transistor |
US7825400B2 (en) * | 2006-06-09 | 2010-11-02 | Intel Corporation | Strain-inducing semiconductor regions |
JP2009054719A (ja) * | 2007-08-24 | 2009-03-12 | Tokyo Electron Ltd | 半導体製造方法、半導体製造装置および表示装置 |
US7750368B2 (en) * | 2008-06-13 | 2010-07-06 | Macronix International Co., Ltd. | Memory device |
US9818744B2 (en) * | 2014-09-04 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Leakage current suppression methods and related structures |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59231865A (ja) * | 1983-06-14 | 1984-12-26 | Seiko Epson Corp | 半導体装置 |
JPS60224274A (ja) * | 1984-04-20 | 1985-11-08 | Nec Corp | 絶縁基板mis型電界効果トランジスタの製造方法 |
US4673957A (en) * | 1984-05-14 | 1987-06-16 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
JPS6156460A (ja) * | 1984-08-28 | 1986-03-22 | Nec Corp | 半導体装置及びその製造方法 |
US4603471A (en) * | 1984-09-06 | 1986-08-05 | Fairchild Semiconductor Corporation | Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions |
JPS62131573A (ja) * | 1985-12-04 | 1987-06-13 | Hitachi Ltd | 半導体装置 |
JPS63252478A (ja) * | 1987-04-09 | 1988-10-19 | Seiko Instr & Electronics Ltd | 絶縁ゲ−ト型半導体装置 |
GB2211022B (en) * | 1987-10-09 | 1991-10-09 | Marconi Electronic Devices | A semiconductor device and a process for making the device |
JP2841419B2 (ja) * | 1988-02-19 | 1998-12-24 | 株式会社デンソー | 多結晶ダイオードおよびその製造方法 |
US5142641A (en) * | 1988-03-23 | 1992-08-25 | Fujitsu Limited | CMOS structure for eliminating latch-up of parasitic thyristor |
JPH01248668A (ja) * | 1988-03-30 | 1989-10-04 | Seiko Epson Corp | 薄膜トランジスタ |
JPH01276765A (ja) * | 1988-04-28 | 1989-11-07 | Seiko Epson Corp | 薄膜トランジスタ |
JPH02188967A (ja) * | 1989-01-18 | 1990-07-25 | Nissan Motor Co Ltd | 半導体装置 |
JP2698182B2 (ja) * | 1989-07-31 | 1998-01-19 | 三洋電機株式会社 | 薄膜トランジスタ |
JP2888878B2 (ja) * | 1989-10-02 | 1999-05-10 | 株式会社東芝 | 半導体装置 |
-
1991
- 1991-10-25 JP JP30571291A patent/JP2947654B2/ja not_active Expired - Fee Related
- 1991-10-30 EP EP91118558A patent/EP0483824B1/de not_active Expired - Lifetime
- 1991-10-30 CA CA002054498A patent/CA2054498C/en not_active Expired - Fee Related
- 1991-10-30 DE DE69113571T patent/DE69113571T2/de not_active Expired - Fee Related
-
1993
- 1993-03-24 US US08/037,681 patent/US5475244A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0483824B1 (de) | 1995-10-04 |
JP2947654B2 (ja) | 1999-09-13 |
JPH053322A (ja) | 1993-01-08 |
CA2054498C (en) | 1997-05-20 |
DE69113571T2 (de) | 1996-03-28 |
EP0483824A1 (de) | 1992-05-06 |
US5475244A (en) | 1995-12-12 |
CA2054498A1 (en) | 1992-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |