DE69102351D1 - Heteroübergangseffekttransistor mit vergrabenem Kanal. - Google Patents

Heteroübergangseffekttransistor mit vergrabenem Kanal.

Info

Publication number
DE69102351D1
DE69102351D1 DE69102351T DE69102351T DE69102351D1 DE 69102351 D1 DE69102351 D1 DE 69102351D1 DE 69102351 T DE69102351 T DE 69102351T DE 69102351 T DE69102351 T DE 69102351T DE 69102351 D1 DE69102351 D1 DE 69102351D1
Authority
DE
Germany
Prior art keywords
effect transistor
buried channel
channel heterojunction
heterojunction effect
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69102351T
Other languages
English (en)
Other versions
DE69102351T2 (de
Inventor
Philip Anthony Kiely
Geoffrey W Taylor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of DE69102351D1 publication Critical patent/DE69102351D1/de
Application granted granted Critical
Publication of DE69102351T2 publication Critical patent/DE69102351T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69102351T 1990-06-05 1991-03-28 Heteroübergangseffekttransistor mit vergrabenem Kanal. Expired - Fee Related DE69102351T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/533,636 US5111255A (en) 1990-06-05 1990-06-05 Buried channel heterojunction field effect transistor

Publications (2)

Publication Number Publication Date
DE69102351D1 true DE69102351D1 (de) 1994-07-14
DE69102351T2 DE69102351T2 (de) 1995-04-06

Family

ID=24126822

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69102351T Expired - Fee Related DE69102351T2 (de) 1990-06-05 1991-03-28 Heteroübergangseffekttransistor mit vergrabenem Kanal.

Country Status (6)

Country Link
US (1) US5111255A (de)
EP (1) EP0460793B1 (de)
JP (1) JP2500063B2 (de)
KR (1) KR100204688B1 (de)
CA (1) CA2039415C (de)
DE (1) DE69102351T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223723A (en) * 1990-10-19 1993-06-29 At&T Bell Laboratories Light emitting device
JPH04291304A (ja) * 1991-03-20 1992-10-15 Fujitsu Ltd 光導波路および光信号の制御方法
US5298441A (en) * 1991-06-03 1994-03-29 Motorola, Inc. Method of making high transconductance heterostructure field effect transistor
US5329137A (en) * 1991-07-17 1994-07-12 The United States Of America As Represented By The Secretary Of The Air Force Integrated total internal reflection optical switch utilizing charge storage in a quantum well
JP2722885B2 (ja) * 1991-09-05 1998-03-09 三菱電機株式会社 電界効果トランジスタ
FR2690286A1 (fr) * 1992-04-17 1993-10-22 Commissariat Energie Atomique Cavité laser à hétérostructure semi-conductrice dissymétrique et laser équipé de cette cavité.
US5323030A (en) * 1993-09-24 1994-06-21 The United States Of America As Represented By The Secretary Of The Army Field effect real space transistor
GB2306773B (en) * 1995-10-20 1999-01-27 Toshiba Cambridge Res Center Optical modulator
GB2316533B (en) * 1996-08-16 1999-05-26 Toshiba Cambridge Res Center Semiconductor device
GB2362506A (en) * 2000-05-19 2001-11-21 Secr Defence Field effect transistor with an InSb quantum well and minority carrier extraction
FR2818012B1 (fr) * 2000-12-12 2003-02-21 St Microelectronics Sa Dispositif semi-conducteur integre de memoire
US6479844B2 (en) * 2001-03-02 2002-11-12 University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
US6534822B1 (en) * 2001-07-17 2003-03-18 Advanced Micro Devices, Inc. Silicon on insulator field effect transistor with a double Schottky gate structure
US6825506B2 (en) * 2002-11-27 2004-11-30 Intel Corporation Field effect transistor and method of fabrication
US7385230B1 (en) 2005-02-08 2008-06-10 The University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
US20130032860A1 (en) * 2011-08-01 2013-02-07 Fabio Alessio Marino HFET with low access resistance
US9029956B2 (en) 2011-10-26 2015-05-12 Global Foundries, Inc. SRAM cell with individual electrical device threshold control
US9048136B2 (en) 2011-10-26 2015-06-02 GlobalFoundries, Inc. SRAM cell with individual electrical device threshold control
US9263522B2 (en) * 2013-12-09 2016-02-16 Qualcomm Incorporated Transistor with a diffusion barrier
EP3350891B1 (de) * 2015-09-14 2020-10-28 Sumitomo Electric Industries, Ltd. Halbleiterlaser
KR102446671B1 (ko) * 2016-01-08 2022-09-23 삼성전자주식회사 비대칭 활성 영역을 포함하는 반도체 소자 및 그의 형성 방법
US10082918B2 (en) * 2016-11-08 2018-09-25 International Business Machines Corporation In-cell capacitive touch and fingerprint detector
US11749965B2 (en) * 2020-07-14 2023-09-05 National Taiwan University Transistor for emitting laser with a fixed frequency

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1179071A (en) * 1981-06-17 1984-12-04 Tadashi Fukuzawa Semiconductor device
US4860068A (en) * 1982-08-13 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices and methods of making such devices
JPS5963770A (ja) * 1982-10-05 1984-04-11 Agency Of Ind Science & Technol 半導体装置
JPS59111371A (ja) * 1982-12-16 1984-06-27 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US4590502A (en) * 1983-03-07 1986-05-20 University Of Illinois Camel gate field effect transistor device
JPS6012775A (ja) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS6035577A (ja) * 1983-08-08 1985-02-23 Agency Of Ind Science & Technol 電界効果型トランジスタ
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions
US4800415A (en) * 1984-09-21 1989-01-24 American Telephone And Telegraph Company, At&T Bell Laboratories Bipolar inversion channel device
US4686550A (en) * 1984-12-04 1987-08-11 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction semiconductor devices having a doping interface dipole
GB2172742B (en) * 1985-03-21 1988-08-24 Stc Plc Photoconductor
US4806997A (en) * 1985-06-14 1989-02-21 AT&T Laboratories American Telephone and Telegraph Company Double heterostructure optoelectronic switch
GB2189345A (en) * 1986-04-16 1987-10-21 Philips Electronic Associated High mobility p channel semi conductor devices
JPH07120782B2 (ja) * 1987-06-22 1995-12-20 日本電気株式会社 半導体装置
FR2619250B1 (fr) * 1987-08-05 1990-05-11 Thomson Hybrides Microondes Transistor hyperfrequence a double heterojonction
EP0312237A3 (de) * 1987-10-13 1989-10-25 AT&T Corp. Anreicherung der Grenzschichtladung in einer delta-dotierten Heterostruktur
JPH0682691B2 (ja) * 1987-11-12 1994-10-19 松下電器産業株式会社 電界効果型トランジスタ

Also Published As

Publication number Publication date
EP0460793A1 (de) 1991-12-11
CA2039415C (en) 1996-07-16
JP2500063B2 (ja) 1996-05-29
JPH04230042A (ja) 1992-08-19
EP0460793B1 (de) 1994-06-08
KR920001768A (ko) 1992-01-30
DE69102351T2 (de) 1995-04-06
CA2039415A1 (en) 1991-12-06
KR100204688B1 (ko) 1999-07-01
US5111255A (en) 1992-05-05

Similar Documents

Publication Publication Date Title
DE69102351T2 (de) Heteroübergangseffekttransistor mit vergrabenem Kanal.
DE69131520T2 (de) Feldeffekttransistor mit geneigtem Kanal
DE69203435D1 (de) Isolierter Kanal.
DE3876228T2 (de) Feldeffektanordnung mit supraleitendem kanal.
DE580452T1 (de) Feldeffekttransistor mit Graben mit niedrig dotiertem epitaktischen Gebiet an dessen Oberflächenbereich.
DE69113571T2 (de) MIS-Transistor mit Heteroübergang.
DE69110698T2 (de) Schieberanlage.
NO904176L (no) Kanal for forblandet stroemning.
DE69429127T2 (de) Heteroübergang-Bipolartransistor
DE69127849T2 (de) Bipolarer Transistor
DE583911T1 (de) MOS Transistorkanal-Struktur.
DE69116076T2 (de) Heterostruktur-Feldeffekttransistor
DE69114984D1 (de) Dünnfilm-Transistor.
DE69117866D1 (de) Heteroübergangsfeldeffekttransistor
DE69109238T2 (de) Feldeffekttransistor.
DE69730073D1 (de) Doppelheteroübergang-Feldeffekttransistor
DE69114628T2 (de) Rücklauftransistor.
DE69406722T2 (de) Heteroübergang-Bipolartransistor
DE69105762D1 (de) Heisse-Elektronen-Transistor.
DE69604149D1 (de) Bipolartransistor mit Heteroübergang
DE59101653D1 (de) Ablaufarmatur.
DE69314292D1 (de) Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft
DE69201708T2 (de) Feldeffekttransistor.
DE69128384D1 (de) Heteroübergang-Bipolartransistor
DE69523526D1 (de) Komplementäres Halbleiterbauelement mit Heteroübergang

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee