GB2306773B - Optical modulator - Google Patents
Optical modulatorInfo
- Publication number
- GB2306773B GB2306773B GB9621073A GB9621073A GB2306773B GB 2306773 B GB2306773 B GB 2306773B GB 9621073 A GB9621073 A GB 9621073A GB 9621073 A GB9621073 A GB 9621073A GB 2306773 B GB2306773 B GB 2306773B
- Authority
- GB
- United Kingdom
- Prior art keywords
- optical modulator
- modulator
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Nonlinear Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9806675A GB2321340B (en) | 1995-10-20 | 1996-10-09 | Optical modulator |
GB9721489A GB2318211B (en) | 1996-10-09 | 1997-10-09 | Optical waveguide structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9521401A GB2300300B (en) | 1995-04-26 | 1995-10-20 | Semiconductor device and method for its operation |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9621073D0 GB9621073D0 (en) | 1996-11-27 |
GB2306773A GB2306773A (en) | 1997-05-07 |
GB2306773B true GB2306773B (en) | 1999-01-27 |
Family
ID=10782542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9621073A Expired - Lifetime GB2306773B (en) | 1995-10-20 | 1996-10-09 | Optical modulator |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2306773B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2386965B (en) * | 2002-03-27 | 2005-09-07 | Bookham Technology Plc | Electro-optic modulators |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0460793A1 (en) * | 1990-06-05 | 1991-12-11 | AT&T Corp. | Buried channel heterojunction field effect transistor |
US5329137A (en) * | 1991-07-17 | 1994-07-12 | The United States Of America As Represented By The Secretary Of The Air Force | Integrated total internal reflection optical switch utilizing charge storage in a quantum well |
EP0645858A2 (en) * | 1993-09-28 | 1995-03-29 | Canon Kabushiki Kaisha | Strained quantum well structure having variable polarization dependence and optical device inducing the strained quantum well structure |
GB2300299A (en) * | 1995-04-26 | 1996-10-30 | Toshiba Cambridge Res Center | Operation of a semiconductor device |
-
1996
- 1996-10-09 GB GB9621073A patent/GB2306773B/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0460793A1 (en) * | 1990-06-05 | 1991-12-11 | AT&T Corp. | Buried channel heterojunction field effect transistor |
US5329137A (en) * | 1991-07-17 | 1994-07-12 | The United States Of America As Represented By The Secretary Of The Air Force | Integrated total internal reflection optical switch utilizing charge storage in a quantum well |
EP0645858A2 (en) * | 1993-09-28 | 1995-03-29 | Canon Kabushiki Kaisha | Strained quantum well structure having variable polarization dependence and optical device inducing the strained quantum well structure |
GB2300299A (en) * | 1995-04-26 | 1996-10-30 | Toshiba Cambridge Res Center | Operation of a semiconductor device |
GB2300300A (en) * | 1995-04-26 | 1996-10-30 | Toshiba Cambridge Res Center | Semiconductor optical modulator device and method for its operation |
Also Published As
Publication number | Publication date |
---|---|
GB9621073D0 (en) | 1996-11-27 |
GB2306773A (en) | 1997-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Expiry date: 20161008 |