GB2306773B - Optical modulator - Google Patents

Optical modulator

Info

Publication number
GB2306773B
GB2306773B GB9621073A GB9621073A GB2306773B GB 2306773 B GB2306773 B GB 2306773B GB 9621073 A GB9621073 A GB 9621073A GB 9621073 A GB9621073 A GB 9621073A GB 2306773 B GB2306773 B GB 2306773B
Authority
GB
United Kingdom
Prior art keywords
optical modulator
modulator
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9621073A
Other versions
GB9621073D0 (en
GB2306773A (en
Inventor
Andrew James Shields
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9521401A external-priority patent/GB2300300B/en
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9806675A priority Critical patent/GB2321340B/en
Publication of GB9621073D0 publication Critical patent/GB9621073D0/en
Publication of GB2306773A publication Critical patent/GB2306773A/en
Priority to GB9721489A priority patent/GB2318211B/en
Application granted granted Critical
Publication of GB2306773B publication Critical patent/GB2306773B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12142—Modulator
GB9621073A 1995-10-20 1996-10-09 Optical modulator Expired - Lifetime GB2306773B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9806675A GB2321340B (en) 1995-10-20 1996-10-09 Optical modulator
GB9721489A GB2318211B (en) 1996-10-09 1997-10-09 Optical waveguide structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9521401A GB2300300B (en) 1995-04-26 1995-10-20 Semiconductor device and method for its operation

Publications (3)

Publication Number Publication Date
GB9621073D0 GB9621073D0 (en) 1996-11-27
GB2306773A GB2306773A (en) 1997-05-07
GB2306773B true GB2306773B (en) 1999-01-27

Family

ID=10782542

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9621073A Expired - Lifetime GB2306773B (en) 1995-10-20 1996-10-09 Optical modulator

Country Status (1)

Country Link
GB (1) GB2306773B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2386965B (en) * 2002-03-27 2005-09-07 Bookham Technology Plc Electro-optic modulators

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460793A1 (en) * 1990-06-05 1991-12-11 AT&T Corp. Buried channel heterojunction field effect transistor
US5329137A (en) * 1991-07-17 1994-07-12 The United States Of America As Represented By The Secretary Of The Air Force Integrated total internal reflection optical switch utilizing charge storage in a quantum well
EP0645858A2 (en) * 1993-09-28 1995-03-29 Canon Kabushiki Kaisha Strained quantum well structure having variable polarization dependence and optical device inducing the strained quantum well structure
GB2300299A (en) * 1995-04-26 1996-10-30 Toshiba Cambridge Res Center Operation of a semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460793A1 (en) * 1990-06-05 1991-12-11 AT&T Corp. Buried channel heterojunction field effect transistor
US5329137A (en) * 1991-07-17 1994-07-12 The United States Of America As Represented By The Secretary Of The Air Force Integrated total internal reflection optical switch utilizing charge storage in a quantum well
EP0645858A2 (en) * 1993-09-28 1995-03-29 Canon Kabushiki Kaisha Strained quantum well structure having variable polarization dependence and optical device inducing the strained quantum well structure
GB2300299A (en) * 1995-04-26 1996-10-30 Toshiba Cambridge Res Center Operation of a semiconductor device
GB2300300A (en) * 1995-04-26 1996-10-30 Toshiba Cambridge Res Center Semiconductor optical modulator device and method for its operation

Also Published As

Publication number Publication date
GB9621073D0 (en) 1996-11-27
GB2306773A (en) 1997-05-07

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20161008