GB2300300B - Semiconductor device and method for its operation - Google Patents

Semiconductor device and method for its operation

Info

Publication number
GB2300300B
GB2300300B GB9521401A GB9521401A GB2300300B GB 2300300 B GB2300300 B GB 2300300B GB 9521401 A GB9521401 A GB 9521401A GB 9521401 A GB9521401 A GB 9521401A GB 2300300 B GB2300300 B GB 2300300B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9521401A
Other versions
GB9521401D0 (en
GB2300300A (en
Inventor
Andrew James Shields
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Publication of GB9521401D0 publication Critical patent/GB9521401D0/en
Priority to US08/637,495 priority Critical patent/US5963358A/en
Priority to JP10801596A priority patent/JP3825498B2/en
Priority to GB9806675A priority patent/GB2321340B/en
Priority to GB9621073A priority patent/GB2306773B/en
Publication of GB2300300A publication Critical patent/GB2300300A/en
Application granted granted Critical
Publication of GB2300300B publication Critical patent/GB2300300B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9521401A 1995-04-26 1995-10-20 Semiconductor device and method for its operation Expired - Lifetime GB2300300B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US08/637,495 US5963358A (en) 1995-04-26 1996-04-25 Semiconductor device and method for its operation
JP10801596A JP3825498B2 (en) 1995-04-26 1996-04-26 Optical modulator
GB9806675A GB2321340B (en) 1995-10-20 1996-10-09 Optical modulator
GB9621073A GB2306773B (en) 1995-10-20 1996-10-09 Optical modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9508466A GB2300299B (en) 1995-04-26 1995-04-26 Operation of a semiconductor device

Publications (3)

Publication Number Publication Date
GB9521401D0 GB9521401D0 (en) 1995-12-20
GB2300300A GB2300300A (en) 1996-10-30
GB2300300B true GB2300300B (en) 1998-04-29

Family

ID=10773544

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9508466A Expired - Fee Related GB2300299B (en) 1995-04-26 1995-04-26 Operation of a semiconductor device
GB9521401A Expired - Lifetime GB2300300B (en) 1995-04-26 1995-10-20 Semiconductor device and method for its operation

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9508466A Expired - Fee Related GB2300299B (en) 1995-04-26 1995-04-26 Operation of a semiconductor device

Country Status (1)

Country Link
GB (2) GB2300299B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2321340B (en) * 1995-10-20 1999-01-27 Toshiba Cambridge Res Center Optical modulator
GB2306773B (en) * 1995-10-20 1999-01-27 Toshiba Cambridge Res Center Optical modulator
GB2323450A (en) * 1997-03-20 1998-09-23 Secr Defence Optical modulator
CA2449860C (en) 2001-05-17 2012-01-24 Sioptical, Inc. Electronic semiconductor control of light in optical waveguide
GB2380059B (en) * 2001-09-25 2003-11-05 Toshiba Res Europ Ltd An optical device and a optically actuated device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872744A (en) * 1988-01-15 1989-10-10 Bell Communications Research, Inc. Single quantum well optical modulator
US5165105A (en) * 1991-08-02 1992-11-17 Minnesota Minning And Manufacturing Company Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect
US5249075A (en) * 1991-04-25 1993-09-28 Thomson-Csf Quantum well wave modulator and optical detector
US5329147A (en) * 1993-01-04 1994-07-12 Xerox Corporation High voltage integrated flyback circuit in 2 μm CMOS
US5359679A (en) * 1992-06-11 1994-10-25 Kokusai Denshin Denwa Kabushiki Kaisha Optical modulator
US5381023A (en) * 1992-08-11 1995-01-10 Nec Corporation Semiconductor device for control of a signal light
US5442723A (en) * 1993-09-02 1995-08-15 Alcatel N.V. Semiconductor strip active optical device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872744A (en) * 1988-01-15 1989-10-10 Bell Communications Research, Inc. Single quantum well optical modulator
US5249075A (en) * 1991-04-25 1993-09-28 Thomson-Csf Quantum well wave modulator and optical detector
US5165105A (en) * 1991-08-02 1992-11-17 Minnesota Minning And Manufacturing Company Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect
US5359679A (en) * 1992-06-11 1994-10-25 Kokusai Denshin Denwa Kabushiki Kaisha Optical modulator
US5381023A (en) * 1992-08-11 1995-01-10 Nec Corporation Semiconductor device for control of a signal light
US5329147A (en) * 1993-01-04 1994-07-12 Xerox Corporation High voltage integrated flyback circuit in 2 μm CMOS
US5442723A (en) * 1993-09-02 1995-08-15 Alcatel N.V. Semiconductor strip active optical device

Also Published As

Publication number Publication date
GB2300299A (en) 1996-10-30
GB9521401D0 (en) 1995-12-20
GB2300300A (en) 1996-10-30
GB2300299B (en) 1999-07-07
GB9508466D0 (en) 1995-06-14

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20151019