GB9508466D0 - Operation of a semiconductor device - Google Patents

Operation of a semiconductor device

Info

Publication number
GB9508466D0
GB9508466D0 GBGB9508466.1A GB9508466A GB9508466D0 GB 9508466 D0 GB9508466 D0 GB 9508466D0 GB 9508466 A GB9508466 A GB 9508466A GB 9508466 D0 GB9508466 D0 GB 9508466D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9508466.1A
Other versions
GB2300299B (en
GB2300299A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9508466A priority Critical patent/GB2300299B/en
Publication of GB9508466D0 publication Critical patent/GB9508466D0/en
Priority to GB9521401A priority patent/GB2300300B/en
Priority to US08/637,495 priority patent/US5963358A/en
Priority to JP10801596A priority patent/JP3825498B2/en
Publication of GB2300299A publication Critical patent/GB2300299A/en
Application granted granted Critical
Publication of GB2300299B publication Critical patent/GB2300299B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9508466A 1995-04-26 1995-04-26 Operation of a semiconductor device Expired - Fee Related GB2300299B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB9508466A GB2300299B (en) 1995-04-26 1995-04-26 Operation of a semiconductor device
GB9521401A GB2300300B (en) 1995-04-26 1995-10-20 Semiconductor device and method for its operation
US08/637,495 US5963358A (en) 1995-04-26 1996-04-25 Semiconductor device and method for its operation
JP10801596A JP3825498B2 (en) 1995-04-26 1996-04-26 Optical modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9508466A GB2300299B (en) 1995-04-26 1995-04-26 Operation of a semiconductor device

Publications (3)

Publication Number Publication Date
GB9508466D0 true GB9508466D0 (en) 1995-06-14
GB2300299A GB2300299A (en) 1996-10-30
GB2300299B GB2300299B (en) 1999-07-07

Family

ID=10773544

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9508466A Expired - Fee Related GB2300299B (en) 1995-04-26 1995-04-26 Operation of a semiconductor device
GB9521401A Expired - Lifetime GB2300300B (en) 1995-04-26 1995-10-20 Semiconductor device and method for its operation

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9521401A Expired - Lifetime GB2300300B (en) 1995-04-26 1995-10-20 Semiconductor device and method for its operation

Country Status (1)

Country Link
GB (2) GB2300299B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2321340B (en) * 1995-10-20 1999-01-27 Toshiba Cambridge Res Center Optical modulator
GB2306773B (en) * 1995-10-20 1999-01-27 Toshiba Cambridge Res Center Optical modulator
GB2323450A (en) * 1997-03-20 1998-09-23 Secr Defence Optical modulator
EP1402298B1 (en) * 2001-05-17 2016-09-21 Cisco Technology, Inc. Electronic semiconductor control of light in optical waveguide
GB2380059B (en) * 2001-09-25 2003-11-05 Toshiba Res Europ Ltd An optical device and a optically actuated device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872744A (en) * 1988-01-15 1989-10-10 Bell Communications Research, Inc. Single quantum well optical modulator
FR2675949B1 (en) * 1991-04-25 1993-07-09 Thomson Csf WAVE MODULATOR AND OPTICAL DETECTOR WITH QUANTUM WELLS.
US5165105A (en) * 1991-08-02 1992-11-17 Minnesota Minning And Manufacturing Company Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect
JP2739666B2 (en) * 1992-06-11 1998-04-15 国際電信電話株式会社 Light modulation element
JP2786063B2 (en) * 1992-08-11 1998-08-13 日本電気株式会社 Semiconductor light control device
US5329147A (en) * 1993-01-04 1994-07-12 Xerox Corporation High voltage integrated flyback circuit in 2 μm CMOS
FR2709566B1 (en) * 1993-09-02 1995-09-29 Alcatel Nv Ribbon semiconductor active optical component.

Also Published As

Publication number Publication date
GB2300300B (en) 1998-04-29
GB2300299B (en) 1999-07-07
GB2300299A (en) 1996-10-30
GB9521401D0 (en) 1995-12-20
GB2300300A (en) 1996-10-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100426