GB9513898D0 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB9513898D0 GB9513898D0 GBGB9513898.8A GB9513898A GB9513898D0 GB 9513898 D0 GB9513898 D0 GB 9513898D0 GB 9513898 A GB9513898 A GB 9513898A GB 9513898 D0 GB9513898 D0 GB 9513898D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Bipolar Transistors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9513898A GB2303246A (en) | 1995-07-07 | 1995-07-07 | Resonant tunneling semiconductor device |
JP8176590A JPH09107090A (en) | 1995-07-07 | 1996-07-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9513898A GB2303246A (en) | 1995-07-07 | 1995-07-07 | Resonant tunneling semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9513898D0 true GB9513898D0 (en) | 1995-09-06 |
GB2303246A GB2303246A (en) | 1997-02-12 |
Family
ID=10777301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9513898A Withdrawn GB2303246A (en) | 1995-07-07 | 1995-07-07 | Resonant tunneling semiconductor device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH09107090A (en) |
GB (1) | GB2303246A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2365210B (en) * | 2000-07-28 | 2003-01-22 | Toshiba Res Europ Ltd | An optical device and a method of making an optical device |
US6597010B2 (en) * | 2001-03-09 | 2003-07-22 | Wisconsin Alumni Research Foundation | Solid-state quantum dot devices and quantum computing using nanostructured logic gates |
US7534710B2 (en) * | 2005-12-22 | 2009-05-19 | International Business Machines Corporation | Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same |
US8541773B2 (en) * | 2011-05-02 | 2013-09-24 | Intel Corporation | Vertical tunneling negative differential resistance devices |
KR102213661B1 (en) * | 2014-04-04 | 2021-02-08 | 삼성전자주식회사 | Optical device including three coupled quantum well structure |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4903101A (en) * | 1988-03-28 | 1990-02-20 | California Institute Of Technology | Tunable quantum well infrared detector |
US5138408A (en) * | 1988-04-15 | 1992-08-11 | Nec Corporation | Resonant tunneling hot carrier transistor |
-
1995
- 1995-07-07 GB GB9513898A patent/GB2303246A/en not_active Withdrawn
-
1996
- 1996-07-05 JP JP8176590A patent/JPH09107090A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH09107090A (en) | 1997-04-22 |
GB2303246A (en) | 1997-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |