GB2296373B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2296373B
GB2296373B GB9425401A GB9425401A GB2296373B GB 2296373 B GB2296373 B GB 2296373B GB 9425401 A GB9425401 A GB 9425401A GB 9425401 A GB9425401 A GB 9425401A GB 2296373 B GB2296373 B GB 2296373B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9425401A
Other versions
GB2296373A (en
GB9425401D0 (en
Inventor
Jonathan E F Frost
Atsushi Kurobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9425401A priority Critical patent/GB2296373B/en
Publication of GB9425401D0 publication Critical patent/GB9425401D0/en
Priority to JP32578795A priority patent/JPH08255898A/en
Publication of GB2296373A publication Critical patent/GB2296373A/en
Application granted granted Critical
Publication of GB2296373B publication Critical patent/GB2296373B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7727—Velocity modulation transistors, i.e. VMT
GB9425401A 1994-12-14 1994-12-14 Semiconductor device Expired - Fee Related GB2296373B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9425401A GB2296373B (en) 1994-12-14 1994-12-14 Semiconductor device
JP32578795A JPH08255898A (en) 1994-12-14 1995-12-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9425401A GB2296373B (en) 1994-12-14 1994-12-14 Semiconductor device

Publications (3)

Publication Number Publication Date
GB9425401D0 GB9425401D0 (en) 1995-02-15
GB2296373A GB2296373A (en) 1996-06-26
GB2296373B true GB2296373B (en) 1997-09-10

Family

ID=10766040

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9425401A Expired - Fee Related GB2296373B (en) 1994-12-14 1994-12-14 Semiconductor device

Country Status (2)

Country Link
JP (1) JPH08255898A (en)
GB (1) GB2296373B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3259703B2 (en) 1998-12-28 2002-02-25 日本電気株式会社 Microwave amplifier circuit
US7230284B2 (en) 2001-07-24 2007-06-12 Cree, Inc. Insulating gate AlGaN/GaN HEMT
DE102004005363A1 (en) * 2004-02-03 2005-09-08 Forschungszentrum Jülich GmbH Semiconductor structure
TW200715570A (en) 2005-09-07 2007-04-16 Cree Inc Robust transistors with fluorine treatment
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8212290B2 (en) * 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
KR102065114B1 (en) 2013-03-14 2020-01-10 삼성전자주식회사 Operating method of reducing current collapse of power device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258632A (en) * 1990-08-31 1993-11-02 Sanyo Electric Co., Ltd. Velocity modulation transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258632A (en) * 1990-08-31 1993-11-02 Sanyo Electric Co., Ltd. Velocity modulation transistor

Also Published As

Publication number Publication date
JPH08255898A (en) 1996-10-01
GB2296373A (en) 1996-06-26
GB9425401D0 (en) 1995-02-15

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20101214