GB2302987B - Method for analyzing failure in semiconductor device - Google Patents
Method for analyzing failure in semiconductor deviceInfo
- Publication number
- GB2302987B GB2302987B GB9613789A GB9613789A GB2302987B GB 2302987 B GB2302987 B GB 2302987B GB 9613789 A GB9613789 A GB 9613789A GB 9613789 A GB9613789 A GB 9613789A GB 2302987 B GB2302987 B GB 2302987B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- analyzing failure
- analyzing
- failure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019151A KR100216674B1 (en) | 1995-06-30 | 1995-06-30 | Deprocessing method of defect analysis of polysilicon contact |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9613789D0 GB9613789D0 (en) | 1996-09-04 |
GB2302987A GB2302987A (en) | 1997-02-05 |
GB2302987B true GB2302987B (en) | 1999-09-15 |
Family
ID=19419494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9613789A Expired - Fee Related GB2302987B (en) | 1995-06-30 | 1996-07-01 | Method for analyzing failure in semiconductor device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0922932A (en) |
KR (1) | KR100216674B1 (en) |
CN (1) | CN1147146A (en) |
DE (1) | DE19626026A1 (en) |
GB (1) | GB2302987B (en) |
TW (1) | TW318950B (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6033994A (en) * | 1997-05-16 | 2000-03-07 | Sony Corporation | Apparatus and method for deprocessing a multi-layer semiconductor device |
KR100533387B1 (en) * | 1998-06-10 | 2006-01-27 | 매그나칩 반도체 유한회사 | Reverse process method of semiconductor device |
AT409429B (en) * | 1999-07-15 | 2002-08-26 | Sez Semiconduct Equip Zubehoer | METHOD FOR ETCH TREATING SEMICONDUCTOR SUBSTRATES FOR THE EXPLOSION OF A METAL LAYER |
CN100340851C (en) * | 2003-02-18 | 2007-10-03 | 华为技术有限公司 | Miniature device and component dissection method |
CN101769876B (en) * | 2008-12-29 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Carry out the method for failure analysis in the semiconductor device |
CN102254844B (en) * | 2010-05-21 | 2013-06-19 | 武汉新芯集成电路制造有限公司 | Memory chip bit line failure analysis method |
CN102253325B (en) * | 2010-05-21 | 2013-07-31 | 中芯国际集成电路制造(上海)有限公司 | Method for analyzing chip failure |
CN102565680B (en) * | 2010-12-27 | 2016-09-14 | 无锡华润上华半导体有限公司 | The failure analysis method of semiconductor device |
CN103776668B (en) * | 2012-10-26 | 2016-03-09 | 中芯国际集成电路制造(上海)有限公司 | The preparation method of semiconductor devices active region failure analysis sample |
CN105092620B (en) * | 2015-06-02 | 2018-06-26 | 武汉新芯集成电路制造有限公司 | A kind of semiconductor device failure analysis method |
CN106876296A (en) * | 2017-01-03 | 2017-06-20 | 航天科工防御技术研究试验中心 | A kind of semiconductor device failure localization method |
CN108037431B (en) * | 2017-11-16 | 2020-02-14 | 长江存储科技有限责任公司 | Method for calibrating bit line short-circuit defects of 3D NAND product |
TWI738568B (en) * | 2020-11-18 | 2021-09-01 | 汎銓科技股份有限公司 | A method of preparing a semiconductor specimen for failure analysis |
CN114899072A (en) * | 2022-03-28 | 2022-08-12 | 上海聚跃检测技术有限公司 | Etching speed control method and system for reactive ion etching |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0345924A2 (en) * | 1988-06-07 | 1989-12-13 | Advanced Micro Devices, Inc. | Testing IC devices |
US5214283A (en) * | 1991-07-23 | 1993-05-25 | Sgs-Thomson Microelectronics, Inc. | Method of determining the cause of open-via failures in an integrated circuit |
-
1995
- 1995-06-30 KR KR1019950019151A patent/KR100216674B1/en not_active IP Right Cessation
-
1996
- 1996-06-28 DE DE19626026A patent/DE19626026A1/en not_active Ceased
- 1996-06-29 TW TW085107886A patent/TW318950B/zh active
- 1996-06-30 CN CN96111009A patent/CN1147146A/en active Pending
- 1996-07-01 GB GB9613789A patent/GB2302987B/en not_active Expired - Fee Related
- 1996-07-01 JP JP8191396A patent/JPH0922932A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0345924A2 (en) * | 1988-06-07 | 1989-12-13 | Advanced Micro Devices, Inc. | Testing IC devices |
US5214283A (en) * | 1991-07-23 | 1993-05-25 | Sgs-Thomson Microelectronics, Inc. | Method of determining the cause of open-via failures in an integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
CN1147146A (en) | 1997-04-09 |
GB2302987A (en) | 1997-02-05 |
KR970003748A (en) | 1997-01-28 |
DE19626026A1 (en) | 1997-01-23 |
KR100216674B1 (en) | 1999-09-01 |
TW318950B (en) | 1997-11-01 |
JPH0922932A (en) | 1997-01-21 |
GB9613789D0 (en) | 1996-09-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20090701 |