GB9502863D0 - Method for fabricating semiconductor device - Google Patents

Method for fabricating semiconductor device

Info

Publication number
GB9502863D0
GB9502863D0 GBGB9502863.5A GB9502863A GB9502863D0 GB 9502863 D0 GB9502863 D0 GB 9502863D0 GB 9502863 A GB9502863 A GB 9502863A GB 9502863 D0 GB9502863 D0 GB 9502863D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
fabricating semiconductor
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9502863.5A
Other versions
GB2286721A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9502863D0 publication Critical patent/GB9502863D0/en
Publication of GB2286721A publication Critical patent/GB2286721A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
GB9502863A 1994-02-15 1995-02-14 Method for fabricating semiconductor device Withdrawn GB2286721A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6018729A JP2861785B2 (en) 1994-02-15 1994-02-15 Method for forming wiring of semiconductor device

Publications (2)

Publication Number Publication Date
GB9502863D0 true GB9502863D0 (en) 1995-04-05
GB2286721A GB2286721A (en) 1995-08-23

Family

ID=11979763

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9502863A Withdrawn GB2286721A (en) 1994-02-15 1995-02-14 Method for fabricating semiconductor device

Country Status (2)

Country Link
JP (1) JP2861785B2 (en)
GB (1) GB2286721A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291585B1 (en) * 1997-07-25 2001-11-30 윤종용 Method for etching metal layer of semiconductor device
US6177353B1 (en) * 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
JP2000138224A (en) 1998-11-04 2000-05-16 Fujitsu Ltd Method for manufacturing semiconductor device
JP4646346B2 (en) * 2000-01-28 2011-03-09 パナソニック株式会社 Manufacturing method of electronic device
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
JP5877658B2 (en) * 2011-06-14 2016-03-08 ローム株式会社 Semiconductor device and manufacturing method thereof
CN102956430A (en) * 2012-05-25 2013-03-06 深圳市华星光电技术有限公司 Method for replacing helium atoms on film layer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1059882A (en) * 1976-08-16 1979-08-07 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
JPS6033367A (en) * 1983-08-04 1985-02-20 Nec Corp Dry etching method of aluminum
US5219485A (en) * 1985-10-11 1993-06-15 Applied Materials, Inc. Materials and methods for etching silicides, polycrystalline silicon and polycides
US4809851A (en) * 1987-04-03 1989-03-07 World Container Corporation Collapsible container
JP2558738B2 (en) * 1987-09-25 1996-11-27 株式会社東芝 Surface treatment method
JPH02189919A (en) * 1989-01-18 1990-07-25 Nec Corp Dry etching method
JP3016261B2 (en) * 1991-02-14 2000-03-06 ソニー株式会社 Method for manufacturing semiconductor device
JPH0547721A (en) * 1991-08-20 1993-02-26 Sony Corp Etching method
JPH05102142A (en) * 1991-10-04 1993-04-23 Sony Corp Method for forming aluminum metallic pattern
JPH05160084A (en) * 1991-12-11 1993-06-25 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
GB2286721A (en) 1995-08-23
JPH07230993A (en) 1995-08-29
JP2861785B2 (en) 1999-02-24

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)