GB9426147D0 - Method for fabricating semi-conductor device - Google Patents
Method for fabricating semi-conductor deviceInfo
- Publication number
- GB9426147D0 GB9426147D0 GBGB9426147.6A GB9426147A GB9426147D0 GB 9426147 D0 GB9426147 D0 GB 9426147D0 GB 9426147 A GB9426147 A GB 9426147A GB 9426147 D0 GB9426147 D0 GB 9426147D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor device
- fabricating semi
- fabricating
- semi
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5353707A JP2907314B2 (en) | 1993-12-30 | 1993-12-30 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9426147D0 true GB9426147D0 (en) | 1995-02-22 |
GB2285336A GB2285336A (en) | 1995-07-05 |
Family
ID=18432679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9426147A Withdrawn GB2285336A (en) | 1993-12-30 | 1994-12-23 | Polysilicon/silicide etching method |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2907314B2 (en) |
GB (1) | GB2285336A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5880033A (en) * | 1996-06-17 | 1999-03-09 | Applied Materials, Inc. | Method for etching metal silicide with high selectivity to polysilicon |
US6008139A (en) * | 1996-06-17 | 1999-12-28 | Applied Materials Inc. | Method of etching polycide structures |
KR100274597B1 (en) * | 1997-05-19 | 2001-02-01 | 윤종용 | Etch gas composition of polycrystalline silicon layer and tungsten silicide layer for manufacturing semiconductor device and plasma etch method using the same |
JP3003657B2 (en) * | 1997-12-24 | 2000-01-31 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US6242362B1 (en) * | 1999-08-04 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Etch process for fabricating a vertical hard mask/conductive pattern profile to improve T-shaped profile for a silicon oxynitride hard mask |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5160408A (en) * | 1990-04-27 | 1992-11-03 | Micron Technology, Inc. | Method of isotropically dry etching a polysilicon containing runner with pulsed power |
JP3033128B2 (en) * | 1990-05-25 | 2000-04-17 | ソニー株式会社 | Dry etching method |
US5167762A (en) * | 1991-01-02 | 1992-12-01 | Micron Technology, Inc. | Anisotropic etch method |
-
1993
- 1993-12-30 JP JP5353707A patent/JP2907314B2/en not_active Expired - Lifetime
-
1994
- 1994-12-23 GB GB9426147A patent/GB2285336A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH07201830A (en) | 1995-08-04 |
GB2285336A (en) | 1995-07-05 |
JP2907314B2 (en) | 1999-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |