GB2318451B - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- GB2318451B GB2318451B GB9722208A GB9722208A GB2318451B GB 2318451 B GB2318451 B GB 2318451B GB 9722208 A GB9722208 A GB 9722208A GB 9722208 A GB9722208 A GB 9722208A GB 2318451 B GB2318451 B GB 2318451B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- fabricating semiconductor
- fabricating
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8277750A JPH10125617A (en) | 1996-10-21 | 1996-10-21 | Method of manufacturing semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9722208D0 GB9722208D0 (en) | 1997-12-17 |
GB2318451A GB2318451A (en) | 1998-04-22 |
GB2318451B true GB2318451B (en) | 1999-04-14 |
Family
ID=17587817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9722208A Expired - Fee Related GB2318451B (en) | 1996-10-21 | 1997-10-21 | Method of fabricating semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH10125617A (en) |
KR (1) | KR19980033022A (en) |
GB (1) | GB2318451B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11307765A (en) * | 1998-04-20 | 1999-11-05 | Nec Corp | Semiconductor device and its manufacture |
US6376349B1 (en) * | 2000-01-19 | 2002-04-23 | Motorola, Inc. | Process for forming a semiconductor device and a conductive structure |
KR100370156B1 (en) * | 2000-08-01 | 2003-01-30 | 주식회사 하이닉스반도체 | method for manufacturing of semiconductor device |
KR100426482B1 (en) * | 2001-12-22 | 2004-04-14 | 주식회사 하이닉스반도체 | Method of manufacturing a flash memory cell |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0268027A1 (en) * | 1986-11-17 | 1988-05-25 | Spectrum CVD, Inc. | Silicide to silicon bond |
US5525540A (en) * | 1993-12-13 | 1996-06-11 | Nec Corporation | Method for manufacturing silicon layer having impurity diffusion preventing layer |
GB2314456A (en) * | 1996-06-21 | 1997-12-24 | Hyundai Electronics Ind | Method of forming a polycide contact layer in a semiconductor device |
-
1996
- 1996-10-21 JP JP8277750A patent/JPH10125617A/en active Pending
-
1997
- 1997-10-21 KR KR1019970054017A patent/KR19980033022A/en active IP Right Grant
- 1997-10-21 GB GB9722208A patent/GB2318451B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0268027A1 (en) * | 1986-11-17 | 1988-05-25 | Spectrum CVD, Inc. | Silicide to silicon bond |
US5525540A (en) * | 1993-12-13 | 1996-06-11 | Nec Corporation | Method for manufacturing silicon layer having impurity diffusion preventing layer |
GB2314456A (en) * | 1996-06-21 | 1997-12-24 | Hyundai Electronics Ind | Method of forming a polycide contact layer in a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
KR19980033022A (en) | 1998-07-25 |
JPH10125617A (en) | 1998-05-15 |
GB2318451A (en) | 1998-04-22 |
GB9722208D0 (en) | 1997-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2306779B (en) | Method of fabricating semiconductor device | |
GB2347268B (en) | Method of semiconductor device fabrication | |
GB9713223D0 (en) | Method of fabricating a semiconductor device | |
GB9701204D0 (en) | Semiconductor device and method for fabricating the same | |
SG42823A1 (en) | Method of manufacturing semiconductor devices | |
GB9526276D0 (en) | Method of fabricating semiconductor devices | |
EP0667639A3 (en) | Method of manufacturing semiconductor device. | |
SG93171A1 (en) | Producing method of semiconductor device | |
EP0847078A4 (en) | Method for manufacturing semiconductor device | |
GB2318449B (en) | Semiconductor device and method of fabricating the same | |
GB2313708B (en) | Method of fabricating semiconductor device | |
GB2326280B (en) | Method for fabricating semiconductor device | |
EP1065714A4 (en) | Method of fabricating semiconductor device | |
GB9824430D0 (en) | Method of manufacturing semiconductor device | |
TW359892B (en) | Semiconductor device and method of manufacturing the same | |
GB9502863D0 (en) | Method for fabricating semiconductor device | |
GB2320805B (en) | Method of fabricating a semiconductor device | |
GB2318451B (en) | Method of fabricating semiconductor device | |
KR100238220B1 (en) | Plattening method of semiconductor device | |
GB2304997B (en) | Method of fabricating semiconductor device | |
GB2302986B (en) | Semiconductor device and fabricating method thereof | |
GB2289372B (en) | Method of manufacturing semiconductor device | |
TW369209U (en) | Semiconductor fabricating apparatus | |
GB9815286D0 (en) | Method of manufacturing semiconductor device | |
KR100230396B1 (en) | Semiconductor device making method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20041021 |