GB2289372B - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- GB2289372B GB2289372B GB9509196A GB9509196A GB2289372B GB 2289372 B GB2289372 B GB 2289372B GB 9509196 A GB9509196 A GB 9509196A GB 9509196 A GB9509196 A GB 9509196A GB 2289372 B GB2289372 B GB 2289372B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- manufacturing semiconductor
- manufacturing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9632194A JPH07307306A (en) | 1994-05-10 | 1994-05-10 | Manufacture of semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9509196D0 GB9509196D0 (en) | 1995-06-28 |
GB2289372A GB2289372A (en) | 1995-11-15 |
GB2289372B true GB2289372B (en) | 1998-08-19 |
Family
ID=14161756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9509196A Expired - Fee Related GB2289372B (en) | 1994-05-10 | 1995-05-05 | Method of manufacturing semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH07307306A (en) |
DE (1) | DE19516998A1 (en) |
GB (1) | GB2289372B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6090707A (en) * | 1999-09-02 | 2000-07-18 | Micron Technology, Inc. | Method of forming a conductive silicide layer on a silicon comprising substrate and method of forming a conductive silicide contact |
JP5600985B2 (en) * | 2010-03-24 | 2014-10-08 | 三菱電機株式会社 | Method for manufacturing power semiconductor device |
JP5721339B2 (en) * | 2010-04-01 | 2015-05-20 | 三菱電機株式会社 | Semiconductor device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS513574A (en) * | 1974-06-26 | 1976-01-13 | Nippon Electric Co | IONCHUNYUSARETAKIBANNO SHORIHOHO |
US4186410A (en) * | 1978-06-27 | 1980-01-29 | Bell Telephone Laboratories, Incorporated | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
EP0029334A1 (en) * | 1979-11-15 | 1981-05-27 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Series-connected combination of two-terminal semiconductor devices and their fabrication |
US4298403A (en) * | 1980-02-28 | 1981-11-03 | Davey John E | Ion-implanted evaporated germanium layers as n+ contacts to GaAs |
EP0042066A2 (en) * | 1980-06-12 | 1981-12-23 | International Business Machines Corporation | Intermetallic semiconductor devices |
EP0164720A2 (en) * | 1984-06-14 | 1985-12-18 | International Business Machines Corporation | An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact |
WO1988005601A1 (en) * | 1987-01-16 | 1988-07-28 | The Marconi Company Limited | Contact to cadmium mercury telluride |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3755026A (en) * | 1971-04-01 | 1973-08-28 | Sprague Electric Co | Method of making a semiconductor device having tunnel oxide contacts |
JPS59213145A (en) * | 1983-05-18 | 1984-12-03 | Toshiba Corp | Semiconductor device and manufacture thereof |
US5229631A (en) * | 1990-08-15 | 1993-07-20 | Intel Corporation | Erase performance improvement via dual floating gate processing |
US5102814A (en) * | 1990-11-02 | 1992-04-07 | Intel Corporation | Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions |
US5150176A (en) * | 1992-02-13 | 1992-09-22 | Motorola, Inc. | PN junction surge suppressor structure with moat |
-
1994
- 1994-05-10 JP JP9632194A patent/JPH07307306A/en active Pending
-
1995
- 1995-05-05 GB GB9509196A patent/GB2289372B/en not_active Expired - Fee Related
- 1995-05-09 DE DE1995116998 patent/DE19516998A1/en not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS513574A (en) * | 1974-06-26 | 1976-01-13 | Nippon Electric Co | IONCHUNYUSARETAKIBANNO SHORIHOHO |
US4186410A (en) * | 1978-06-27 | 1980-01-29 | Bell Telephone Laboratories, Incorporated | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
EP0029334A1 (en) * | 1979-11-15 | 1981-05-27 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Series-connected combination of two-terminal semiconductor devices and their fabrication |
US4298403A (en) * | 1980-02-28 | 1981-11-03 | Davey John E | Ion-implanted evaporated germanium layers as n+ contacts to GaAs |
EP0042066A2 (en) * | 1980-06-12 | 1981-12-23 | International Business Machines Corporation | Intermetallic semiconductor devices |
EP0164720A2 (en) * | 1984-06-14 | 1985-12-18 | International Business Machines Corporation | An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact |
WO1988005601A1 (en) * | 1987-01-16 | 1988-07-28 | The Marconi Company Limited | Contact to cadmium mercury telluride |
Non-Patent Citations (1)
Title |
---|
WPI Abstract Accession No 76-15479X/09 & JP51003574 (NIPPON ELECTRIC) 13/1/76 (see abstract) * |
Also Published As
Publication number | Publication date |
---|---|
JPH07307306A (en) | 1995-11-21 |
GB2289372A (en) | 1995-11-15 |
DE19516998A1 (en) | 1995-11-23 |
GB9509196D0 (en) | 1995-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20000507 |