GB2313708B - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
GB2313708B
GB2313708B GB9711309A GB9711309A GB2313708B GB 2313708 B GB2313708 B GB 2313708B GB 9711309 A GB9711309 A GB 9711309A GB 9711309 A GB9711309 A GB 9711309A GB 2313708 B GB2313708 B GB 2313708B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
fabricating semiconductor
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9711309A
Other versions
GB9711309D0 (en
GB2313708A (en
Inventor
Hideaki Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9711309D0 publication Critical patent/GB9711309D0/en
Publication of GB2313708A publication Critical patent/GB2313708A/en
Application granted granted Critical
Publication of GB2313708B publication Critical patent/GB2313708B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
GB9711309A 1996-05-30 1997-05-30 Method of fabricating semiconductor device Expired - Fee Related GB2313708B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08137225A JP3112832B2 (en) 1996-05-30 1996-05-30 Method for manufacturing semiconductor device

Publications (3)

Publication Number Publication Date
GB9711309D0 GB9711309D0 (en) 1997-07-30
GB2313708A GB2313708A (en) 1997-12-03
GB2313708B true GB2313708B (en) 1998-07-29

Family

ID=15193711

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9711309A Expired - Fee Related GB2313708B (en) 1996-05-30 1997-05-30 Method of fabricating semiconductor device

Country Status (3)

Country Link
JP (1) JP3112832B2 (en)
KR (1) KR100252492B1 (en)
GB (1) GB2313708B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW383427B (en) * 1998-04-03 2000-03-01 United Microelectronics Corp Method for etching tantalum oxide
GB2337361B (en) * 1998-05-06 2000-03-29 United Microelectronics Corp Method of etching tantalum oxide layer
US6177353B1 (en) * 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
JP3257533B2 (en) 1999-01-25 2002-02-18 日本電気株式会社 Wiring formation method using inorganic anti-reflection film
JP3733021B2 (en) * 2000-12-15 2006-01-11 シャープ株式会社 Plasma process method
JP4546667B2 (en) * 2001-05-17 2010-09-15 東京エレクトロン株式会社 Dry etching method
KR100453956B1 (en) * 2001-12-20 2004-10-20 동부전자 주식회사 Method for manufacturing metal line of semiconductor device
DE102004022402B4 (en) * 2004-05-06 2007-03-15 Infineon Technologies Ag Process for the anisotropic etching of aluminum-containing substrates
JP5237306B2 (en) * 2010-01-07 2013-07-17 日本電信電話株式会社 Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device
WO2021171458A1 (en) * 2020-02-27 2021-09-02 株式会社日立ハイテク Plasma processing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217570A (en) * 1991-01-31 1993-06-08 Sony Corporation Dry etching method
JPH06104222A (en) * 1992-09-18 1994-04-15 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films

Also Published As

Publication number Publication date
GB9711309D0 (en) 1997-07-30
JP3112832B2 (en) 2000-11-27
KR100252492B1 (en) 2000-05-01
KR970077353A (en) 1997-12-12
JPH09321026A (en) 1997-12-12
GB2313708A (en) 1997-12-03

Similar Documents

Publication Publication Date Title
GB2306779B (en) Method of fabricating semiconductor device
GB2347268B (en) Method of semiconductor device fabrication
GB9713223D0 (en) Method of fabricating a semiconductor device
GB9701204D0 (en) Semiconductor device and method for fabricating the same
SG42823A1 (en) Method of manufacturing semiconductor devices
GB9526276D0 (en) Method of fabricating semiconductor devices
EP0667639A3 (en) Method of manufacturing semiconductor device.
SG93171A1 (en) Producing method of semiconductor device
EP0847078A4 (en) Method for manufacturing semiconductor device
GB2318449B (en) Semiconductor device and method of fabricating the same
GB2313708B (en) Method of fabricating semiconductor device
GB2326280B (en) Method for fabricating semiconductor device
EP1065714A4 (en) Method of fabricating semiconductor device
GB9824430D0 (en) Method of manufacturing semiconductor device
GB9502863D0 (en) Method for fabricating semiconductor device
GB2320805B (en) Method of fabricating a semiconductor device
GB2318451B (en) Method of fabricating semiconductor device
TW359892B (en) Semiconductor device and method of manufacturing the same
KR100238220B1 (en) Plattening method of semiconductor device
GB2304997B (en) Method of fabricating semiconductor device
GB2302986B (en) Semiconductor device and fabricating method thereof
GB2289372B (en) Method of manufacturing semiconductor device
TW369209U (en) Semiconductor fabricating apparatus
GB9815286D0 (en) Method of manufacturing semiconductor device
KR100230396B1 (en) Semiconductor device making method

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee