GB2313708B - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- GB2313708B GB2313708B GB9711309A GB9711309A GB2313708B GB 2313708 B GB2313708 B GB 2313708B GB 9711309 A GB9711309 A GB 9711309A GB 9711309 A GB9711309 A GB 9711309A GB 2313708 B GB2313708 B GB 2313708B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- fabricating semiconductor
- fabricating
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP08137225A JP3112832B2 (en) | 1996-05-30 | 1996-05-30 | Method for manufacturing semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9711309D0 GB9711309D0 (en) | 1997-07-30 |
GB2313708A GB2313708A (en) | 1997-12-03 |
GB2313708B true GB2313708B (en) | 1998-07-29 |
Family
ID=15193711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9711309A Expired - Fee Related GB2313708B (en) | 1996-05-30 | 1997-05-30 | Method of fabricating semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3112832B2 (en) |
KR (1) | KR100252492B1 (en) |
GB (1) | GB2313708B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383427B (en) * | 1998-04-03 | 2000-03-01 | United Microelectronics Corp | Method for etching tantalum oxide |
GB2337361B (en) * | 1998-05-06 | 2000-03-29 | United Microelectronics Corp | Method of etching tantalum oxide layer |
US6177353B1 (en) * | 1998-09-15 | 2001-01-23 | Infineon Technologies North America Corp. | Metallization etching techniques for reducing post-etch corrosion of metal lines |
JP3257533B2 (en) * | 1999-01-25 | 2002-02-18 | 日本電気株式会社 | Wiring formation method using inorganic anti-reflection film |
JP3733021B2 (en) * | 2000-12-15 | 2006-01-11 | シャープ株式会社 | Plasma process method |
JP4546667B2 (en) * | 2001-05-17 | 2010-09-15 | 東京エレクトロン株式会社 | Dry etching method |
KR100453956B1 (en) * | 2001-12-20 | 2004-10-20 | 동부전자 주식회사 | Method for manufacturing metal line of semiconductor device |
DE102004022402B4 (en) * | 2004-05-06 | 2007-03-15 | Infineon Technologies Ag | Process for the anisotropic etching of aluminum-containing substrates |
JP5237306B2 (en) * | 2010-01-07 | 2013-07-17 | 日本電信電話株式会社 | Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device |
WO2021171458A1 (en) * | 2020-02-27 | 2021-09-02 | 株式会社日立ハイテク | Plasma processing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5350488A (en) * | 1992-12-10 | 1994-09-27 | Applied Materials, Inc. | Process for etching high copper content aluminum films |
US5411631A (en) * | 1992-11-11 | 1995-05-02 | Tokyo Electron Limited | Dry etching method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5217570A (en) * | 1991-01-31 | 1993-06-08 | Sony Corporation | Dry etching method |
JPH06104222A (en) * | 1992-09-18 | 1994-04-15 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1996
- 1996-05-30 JP JP08137225A patent/JP3112832B2/en not_active Expired - Fee Related
-
1997
- 1997-05-30 GB GB9711309A patent/GB2313708B/en not_active Expired - Fee Related
- 1997-05-30 KR KR1019970022319A patent/KR100252492B1/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5411631A (en) * | 1992-11-11 | 1995-05-02 | Tokyo Electron Limited | Dry etching method |
US5350488A (en) * | 1992-12-10 | 1994-09-27 | Applied Materials, Inc. | Process for etching high copper content aluminum films |
Also Published As
Publication number | Publication date |
---|---|
JP3112832B2 (en) | 2000-11-27 |
JPH09321026A (en) | 1997-12-12 |
GB9711309D0 (en) | 1997-07-30 |
GB2313708A (en) | 1997-12-03 |
KR970077353A (en) | 1997-12-12 |
KR100252492B1 (en) | 2000-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |