GB9815286D0 - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
GB9815286D0
GB9815286D0 GBGB9815286.1A GB9815286A GB9815286D0 GB 9815286 D0 GB9815286 D0 GB 9815286D0 GB 9815286 A GB9815286 A GB 9815286A GB 9815286 D0 GB9815286 D0 GB 9815286D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9815286.1A
Other versions
GB2327299A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9815286D0 publication Critical patent/GB9815286D0/en
Publication of GB2327299A publication Critical patent/GB2327299A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9815286A 1997-07-15 1998-07-14 Method of manufacturing silicon hemispherical grains Withdrawn GB2327299A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9190044A JPH1140763A (en) 1997-07-15 1997-07-15 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
GB9815286D0 true GB9815286D0 (en) 1998-09-09
GB2327299A GB2327299A (en) 1999-01-20

Family

ID=16251428

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9815286A Withdrawn GB2327299A (en) 1997-07-15 1998-07-14 Method of manufacturing silicon hemispherical grains

Country Status (4)

Country Link
JP (1) JPH1140763A (en)
KR (1) KR19990013845A (en)
CN (1) CN1210362A (en)
GB (1) GB2327299A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6764916B1 (en) 1999-03-23 2004-07-20 Hitachi Kokusai Electric Inc. Manufacturing method for semiconductor device
JP2001024165A (en) * 1999-07-06 2001-01-26 Hitachi Ltd Semiconductor device and its manufacture and semiconductor production device
US6159874A (en) * 1999-10-27 2000-12-12 Infineon Technologies North America Corp. Method of forming a hemispherical grained capacitor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2833545B2 (en) * 1995-03-06 1998-12-09 日本電気株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH1140763A (en) 1999-02-12
CN1210362A (en) 1999-03-10
KR19990013845A (en) 1999-02-25
GB2327299A (en) 1999-01-20

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)