KR100238220B1 - Plattening method of semiconductor device - Google Patents
Plattening method of semiconductor device Download PDFInfo
- Publication number
- KR100238220B1 KR100238220B1 KR1019960066949A KR19960066949A KR100238220B1 KR 100238220 B1 KR100238220 B1 KR 100238220B1 KR 1019960066949 A KR1019960066949 A KR 1019960066949A KR 19960066949 A KR19960066949 A KR 19960066949A KR 100238220 B1 KR100238220 B1 KR 100238220B1
- Authority
- KR
- South Korea
- Prior art keywords
- plattening
- semiconductor device
- semiconductor
- plattening method
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960066949A KR100238220B1 (en) | 1996-12-17 | 1996-12-17 | Plattening method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960066949A KR100238220B1 (en) | 1996-12-17 | 1996-12-17 | Plattening method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980048378A KR19980048378A (en) | 1998-09-15 |
| KR100238220B1 true KR100238220B1 (en) | 2000-01-15 |
Family
ID=19488549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960066949A KR100238220B1 (en) | 1996-12-17 | 1996-12-17 | Plattening method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100238220B1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4095731B2 (en) * | 1998-11-09 | 2008-06-04 | 株式会社ルネサステクノロジ | Semiconductor device manufacturing method and semiconductor device |
| KR100596768B1 (en) * | 1999-10-22 | 2006-07-04 | 주식회사 하이닉스반도체 | Chemical mechanical polishing method for semiconductor apparatus |
| JP2002367996A (en) * | 2001-06-06 | 2002-12-20 | Nec Corp | Manufacturing method of semiconductor device |
| JP4076131B2 (en) * | 2002-06-07 | 2008-04-16 | 富士通株式会社 | Manufacturing method of semiconductor device |
| CN110660665A (en) * | 2018-06-28 | 2020-01-07 | 长鑫存储技术有限公司 | Method for forming metal plug |
-
1996
- 1996-12-17 KR KR1019960066949A patent/KR100238220B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980048378A (en) | 1998-09-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20071001 Year of fee payment: 9 |
|
| LAPS | Lapse due to unpaid annual fee |