GB2307344B - Method for planarization of semiconductor device - Google Patents
Method for planarization of semiconductor deviceInfo
- Publication number
- GB2307344B GB2307344B GB9624132A GB9624132A GB2307344B GB 2307344 B GB2307344 B GB 2307344B GB 9624132 A GB9624132 A GB 9624132A GB 9624132 A GB9624132 A GB 9624132A GB 2307344 B GB2307344 B GB 2307344B
- Authority
- GB
- United Kingdom
- Prior art keywords
- planarization
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950042291A KR100262400B1 (en) | 1995-11-20 | 1995-11-20 | Method of planarization semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9624132D0 GB9624132D0 (en) | 1997-01-08 |
GB2307344A GB2307344A (en) | 1997-05-21 |
GB2307344B true GB2307344B (en) | 2000-05-17 |
Family
ID=19434734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9624132A Expired - Fee Related GB2307344B (en) | 1995-11-20 | 1996-11-20 | Method for planarization of semiconductor device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2799858B2 (en) |
KR (1) | KR100262400B1 (en) |
CN (1) | CN1080928C (en) |
DE (1) | DE19648082C2 (en) |
GB (1) | GB2307344B (en) |
TW (1) | TW442872B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100256232B1 (en) * | 1997-06-30 | 2000-05-15 | 김영환 | A method for forming interlayer dielectric layer in semiconductor device |
JP3229276B2 (en) * | 1998-12-04 | 2001-11-19 | キヤノン販売株式会社 | Film forming method and method for manufacturing semiconductor device |
JP3824469B2 (en) * | 2000-04-03 | 2006-09-20 | シャープ株式会社 | Solid-state imaging device and manufacturing method thereof |
KR100506054B1 (en) * | 2000-12-28 | 2005-08-05 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
US7226873B2 (en) * | 2004-11-22 | 2007-06-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of improving via filling uniformity in isolated and dense via-pattern regions |
KR20120098095A (en) * | 2011-02-28 | 2012-09-05 | 에스케이하이닉스 주식회사 | Method for manufacturing semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0519393A2 (en) * | 1991-06-20 | 1992-12-23 | Semiconductor Process Laboratory Co., Ltd. | Method for planarizing a semiconductor substrate surface |
US5268333A (en) * | 1990-12-19 | 1993-12-07 | Samsung Electronics Co., Ltd. | Method of reflowing a semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03237744A (en) * | 1990-02-14 | 1991-10-23 | Matsushita Electron Corp | Manufacture of semiconductor device |
JP2874972B2 (en) * | 1990-07-11 | 1999-03-24 | 株式会社東芝 | Method for manufacturing semiconductor device |
KR950006339B1 (en) * | 1991-11-19 | 1995-06-14 | 현대전자산업주식회사 | Bpsg layer forming method |
-
1995
- 1995-11-20 KR KR1019950042291A patent/KR100262400B1/en not_active IP Right Cessation
-
1996
- 1996-11-20 JP JP8324638A patent/JP2799858B2/en not_active Expired - Fee Related
- 1996-11-20 TW TW085114291A patent/TW442872B/en not_active IP Right Cessation
- 1996-11-20 CN CN96123330A patent/CN1080928C/en not_active Expired - Fee Related
- 1996-11-20 DE DE19648082A patent/DE19648082C2/en not_active Expired - Fee Related
- 1996-11-20 GB GB9624132A patent/GB2307344B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5268333A (en) * | 1990-12-19 | 1993-12-07 | Samsung Electronics Co., Ltd. | Method of reflowing a semiconductor device |
EP0519393A2 (en) * | 1991-06-20 | 1992-12-23 | Semiconductor Process Laboratory Co., Ltd. | Method for planarizing a semiconductor substrate surface |
Also Published As
Publication number | Publication date |
---|---|
JPH1092826A (en) | 1998-04-10 |
GB9624132D0 (en) | 1997-01-08 |
DE19648082A1 (en) | 1997-05-22 |
CN1080928C (en) | 2002-03-13 |
KR100262400B1 (en) | 2000-09-01 |
DE19648082C2 (en) | 2000-03-23 |
GB2307344A (en) | 1997-05-21 |
CN1159076A (en) | 1997-09-10 |
KR970030476A (en) | 1997-06-26 |
JP2799858B2 (en) | 1998-09-21 |
TW442872B (en) | 2001-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20131120 |