DE69205766D1 - Organischer Feldeffekttransistor. - Google Patents

Organischer Feldeffekttransistor.

Info

Publication number
DE69205766D1
DE69205766D1 DE69205766T DE69205766T DE69205766D1 DE 69205766 D1 DE69205766 D1 DE 69205766D1 DE 69205766 T DE69205766 T DE 69205766T DE 69205766 T DE69205766 T DE 69205766T DE 69205766 D1 DE69205766 D1 DE 69205766D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
organic field
organic
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69205766T
Other languages
English (en)
Other versions
DE69205766T2 (de
Inventor
Hideyuki Nishizawa
Shuichi Uchikoga
Yoshihiko Nakano
Shuzi Hayase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69205766D1 publication Critical patent/DE69205766D1/de
Application granted granted Critical
Publication of DE69205766T2 publication Critical patent/DE69205766T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
DE69205766T 1991-08-15 1992-08-14 Organischer Feldeffekttransistor. Expired - Fee Related DE69205766T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20528691A JP3224829B2 (ja) 1991-08-15 1991-08-15 有機電界効果型素子

Publications (2)

Publication Number Publication Date
DE69205766D1 true DE69205766D1 (de) 1995-12-07
DE69205766T2 DE69205766T2 (de) 1996-04-25

Family

ID=16504462

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69205766T Expired - Fee Related DE69205766T2 (de) 1991-08-15 1992-08-14 Organischer Feldeffekttransistor.

Country Status (5)

Country Link
US (1) US5355235A (de)
EP (1) EP0528662B1 (de)
JP (1) JP3224829B2 (de)
KR (1) KR960015783B1 (de)
DE (1) DE69205766T2 (de)

Families Citing this family (179)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5597890A (en) * 1993-11-01 1997-01-28 Research Corporation Technologies, Inc. Conjugated polymer exciplexes and applications thereof
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US5574291A (en) * 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
US6278127B1 (en) * 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
US5659181A (en) * 1995-03-02 1997-08-19 Lucent Technologies Inc. Article comprising α-hexathienyl
WO1999010939A2 (en) * 1997-08-22 1999-03-04 Koninklijke Philips Electronics N.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
GB9808061D0 (en) 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
US6204515B1 (en) 1999-01-15 2001-03-20 The Dow Chemical Company Semiconducting polymer field effect transistor
ATE549753T1 (de) * 1999-07-21 2012-03-15 E Ink Corp Reaktive herstellung von dielektrischen schichten und schutz von organischen schichten in organischen halbleiteranordnungen
KR20010089334A (ko) * 1999-08-24 2001-10-06 요트.게.아. 롤페즈 표시장치
GB2360776A (en) * 2000-03-28 2001-10-03 Sharp Kk Oligomers or polymers of benzofuran, benzothiophene or indole
CN1181546C (zh) * 2000-03-28 2004-12-22 皇家菲利浦电子有限公司 带可编程存储器单元的集成电路
US7875975B2 (en) 2000-08-18 2011-01-25 Polyic Gmbh & Co. Kg Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag
DE10045192A1 (de) 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
JP3513097B2 (ja) * 2000-09-29 2004-03-31 株式会社東芝 プロトン伝導性膜およびそれを用いた燃料電池
GB0028867D0 (en) 2000-11-28 2001-01-10 Avecia Ltd Field effect translators,methods for the manufacture thereof and materials therefor
DE10059498A1 (de) * 2000-11-30 2002-06-13 Infineon Technologies Ag Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats
DE10061299A1 (de) 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
WO2002091494A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Switch element having memeory effect
KR100885276B1 (ko) 2001-05-07 2009-02-23 어드밴스드 마이크로 디바이시즈, 인코포레이티드 복합 분자 물질을 이용한 부동 게이트 메모리 디바이스
WO2002091495A2 (en) * 2001-05-07 2002-11-14 Coatue Corporation Molecular memory device
AU2002340795A1 (en) 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
KR100900080B1 (ko) * 2001-05-07 2009-06-01 어드밴스드 마이크로 디바이시즈, 인코포레이티드 자기 조립형 폴리머 막을 구비한 메모리 디바이스 및 그제조 방법
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
ATE409714T1 (de) 2001-07-25 2008-10-15 Merck Patent Gmbh Mono-, oligo and poly-3-(1,1- difluoroalkyl)thiophene und ihre verwendung als ladungstransportmaterial
KR20030010508A (ko) 2001-07-25 2003-02-05 메르크 파텐트 게엠베하 모노-, 올리고- 및 폴리-4-플루오로티오펜 및 전하 이동물질로서의 이들의 용도
US6824706B2 (en) 2001-07-25 2004-11-30 Merck Patent Gesellschaft Mit Beschrank Haftung Mono-, Oligo- and poly-difluorovinyl-(hetero)arylenes, their synthesis and their use as charge transport materials
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
CN100419906C (zh) 2001-08-13 2008-09-17 先进微装置公司 存储器单元
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
DE60235679D1 (de) 2001-08-17 2010-04-29 Merck Patent Gmbh Konjugierte Copolymere aus Dithienothiophen und Vinylen oder Acetylen
TWI245795B (en) 2001-08-17 2005-12-21 Merck Patent Gmbh Mono-, oligo- and polyalkylidenefluorenes and their use as charge transport materials
JP2003177682A (ja) * 2001-09-05 2003-06-27 Konica Corp ディスプレイパネルおよびその製造方法
ATE473251T1 (de) 2001-09-29 2010-07-15 Merck Patent Gmbh Mono-, oligo- und polymere aus benzo(b)thiophen und 2,2'-bisbenzothiophen und ihre verwendung als ladungstransportmaterial
ATE295872T1 (de) 2001-12-10 2005-06-15 Merck Patent Gmbh Oligomere und polymere enthaltend eine 2,6- azulene gruppe und ihre verwendung als ladungstransport materialien
DE10160732A1 (de) * 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
US6863841B2 (en) 2001-12-13 2005-03-08 Merck Patent Gmbh Oxadiazole derivative and its use as charge transport and light emitting material
TWI281748B (en) 2001-12-18 2007-05-21 Matsushita Electric Ind Co Ltd Non-volatile memory
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
DE60305570T2 (de) 2002-04-24 2007-05-03 Merck Patent Gmbh Reaktive mesogene Benzodithiophene
KR100849771B1 (ko) * 2002-05-30 2008-07-31 샤프 가부시키가이샤 액정 표시 장치용 기판 및 그것을 구비한 액정 표시 장치및 그 제조 방법
DE10226370B4 (de) 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
JP4878429B2 (ja) * 2002-07-22 2012-02-15 株式会社リコー 能動素子及びそれを有するｅｌ表示素子
US8044517B2 (en) 2002-07-29 2011-10-25 Polyic Gmbh & Co. Kg Electronic component comprising predominantly organic functional materials and a method for the production thereof
JP4434563B2 (ja) 2002-09-12 2010-03-17 パイオニア株式会社 有機ｅｌ表示装置の製造方法
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
KR100905017B1 (ko) * 2002-12-27 2009-06-30 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
DE10302149A1 (de) 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
JP2004235298A (ja) * 2003-01-29 2004-08-19 Pioneer Electronic Corp 有機半導体素子及びその製造方法
TW200413803A (en) * 2003-01-30 2004-08-01 Ind Tech Res Inst Organic transistor array substrate and its manufacturing method, and LCD including the organic transistor array substrate
CN1282260C (zh) * 2003-01-30 2006-10-25 中国科学院长春应用化学研究所 含有栅绝缘层的异质结型有机半导体场效应晶体管及制作方法
TWI228189B (en) * 2003-04-15 2005-02-21 Ind Tech Res Inst Organic thin film transistor array substrate, its manufacturing method and liquid crystal display including the organic thin film transistor array substrate
JP4470398B2 (ja) * 2003-06-23 2010-06-02 Ｔｄｋ株式会社 電界効果トランジスタ
DE602004016858D1 (de) 2003-08-06 2008-11-13 Merck Patent Gmbh Verfahren zur herstellung von regioregulären polymeren
US7504049B2 (en) * 2003-08-25 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device
DE10340644B4 (de) * 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
DE10340643B4 (de) 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht
JP4850389B2 (ja) * 2003-12-12 2012-01-11 独立行政法人産業技術総合研究所 ドーピング方法およびそれを用いた半導体素子
JP2005223048A (ja) * 2004-02-04 2005-08-18 Ricoh Co Ltd 半導体装置、半導体装置の製造方法、および表示装置
KR101086476B1 (ko) * 2004-04-14 2011-11-25 엘지디스플레이 주식회사 액정표시패널 및 그 제조방법
JP4449549B2 (ja) * 2004-04-15 2010-04-14 日本電気株式会社 有橋環式炭化水素ラクトン構造を有する材料を用いた有機薄膜トランジスタとその製造方法
DE102004040831A1 (de) 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Funketikettfähige Umverpackung
CN101174674B (zh) * 2004-09-01 2010-07-14 财团法人工业技术研究院 一种有机薄膜晶体管的多重保护层
CN100451779C (zh) * 2004-09-01 2009-01-14 财团法人工业技术研究院 一种有机薄膜晶体管的多重保护层方法及装置
JP4737964B2 (ja) * 2004-09-30 2011-08-03 三洋電機株式会社 有機半導体装置
US7358571B2 (en) * 2004-10-20 2008-04-15 Taiwan Semiconductor Manufacturing Company Isolation spacer for thin SOI devices
JP2006154168A (ja) * 2004-11-29 2006-06-15 Seiko Epson Corp アクティブマトリクス基板、電気光学装置、電子デバイス、及びアクティブマトリクス基板の製造方法
DE102004059465A1 (de) 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg Erkennungssystem
DE102004059464A1 (de) 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Elektronikbauteil mit Modulator
DE102004063435A1 (de) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organischer Gleichrichter
EP1684365A3 (de) * 2005-01-20 2008-08-13 Fuji Electric Holdings Co., Ltd. Transistor
DE102005009819A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
DE102005017655B4 (de) 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
CN100466125C (zh) * 2005-04-18 2009-03-04 中国科学院长春应用化学研究所 含有有机异质结的电接触材料及其器件
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
JP2007027326A (ja) * 2005-07-14 2007-02-01 Niigata Univ 有機電界効果トランジスタ
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
EP1754736B1 (de) 2005-08-16 2011-05-11 Merck Patent GmbH Verfahren zur Polymerisation von Thiophen- oder Selenophenderivaten
DE102005044306A1 (de) 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen
KR100719566B1 (ko) * 2005-10-22 2007-05-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 및 이를 구비한 평판 표시 장치
US8431682B2 (en) 2005-11-24 2013-04-30 Merck Patent Gmbh Regioregular polyselenophenes
EP1951786B1 (de) 2005-11-24 2011-03-23 Merck Patent GmbH Verfahren zur herstellung von regioregulären polymeren
US20070145359A1 (en) * 2005-12-07 2007-06-28 Chi Ming Che Materials for organic thin film transistors
DE102005059608B4 (de) * 2005-12-12 2009-04-02 Polyic Gmbh & Co. Kg Organisches elektronisches Bauelement mit verbesserter Spannungsstabilität und Verfahren zur Herstellung dazu
KR101328628B1 (ko) * 2006-07-28 2013-11-14 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 그 제조 방법
US7785759B2 (en) * 2008-03-31 2010-08-31 Xerox Corporation Thiadiazole containing charge transport layer photoconductors
TWI471328B (zh) 2008-07-02 2015-02-01 Basf Se 以二噻吩并〔２，３－ｄ：２’，３’－ｄ’〕苯并〔１，２－ｂ：４，５－ｂ’〕二噻吩為主之高效能溶液可加工之半導體
CN102084436B (zh) 2008-07-02 2012-10-17 巴斯夫欧洲公司 聚(5，5′-二(噻吩-2-基)苯并[2，1-b；3，4-b′]二噻吩)及其作为高性能可溶液加工半导体聚合物的用途
GB2474623B (en) 2008-08-18 2012-08-29 Merck Patent Gmbh Indacenodithiophene and indacenodiselenophene polymers and their use as organic semiconductors
GB2475667B (en) 2008-09-19 2012-08-08 Merck Patent Gmbh Polymers derived from bis (thienocyclopenta) benzothiadiazole and their use as organic semiconductors
KR101640620B1 (ko) 2008-09-19 2016-07-18 메르크 파텐트 게엠베하 벤조비스(실로로티오펜) 유래 중합체 및 그의 유기 반도체로서의 용도
BR112012002045A2 (pt) 2009-08-12 2019-09-24 Merck Patent Gmbh polímeros de fenantro [1,10,9,8-c,d,e,f,g] carbazol e seu uso como semicondutores orgânicos.
KR101780083B1 (ko) 2009-12-02 2017-10-10 바스프 에스이 디티에노벤조-티에노［3,2-ｂ］티오펜 공중합체 및 고성능 용액 공정 가능한 반도체 중합체로서 이의 용도
US9365585B2 (en) 2010-02-15 2016-06-14 Merck Patent Gmbh Semiconducting polymers
GB2491323A (en) 2010-03-24 2012-11-28 Merck Patent Gmbh Polymers of 8,9-Dihydrobenzo(DEF)Carbazole and their use as organic semiconductors
EP2553743A1 (de) 2010-03-31 2013-02-06 Basf Se Annellierte dithiophen-copolymere
US10050201B2 (en) 2010-04-19 2018-08-14 Merck Patent Gmbh Polymers of benzodithiophene and their use as organic semiconductors
US9287505B2 (en) 2010-07-08 2016-03-15 Merck Patent Gmbh Semiconducting polymers
KR101792901B1 (ko) 2010-07-09 2017-11-02 메르크 파텐트 게엠베하 반도전성 중합체
WO2012019683A2 (en) 2010-08-13 2012-02-16 Merck Patent Gmbh Anthra[2,3-b:7,6-b']dithiophene derivatives and their use as organic semiconductors
WO2012028246A1 (en) 2010-09-04 2012-03-08 Merck Patent Gmbh Conjugated polymers
WO2012031659A1 (en) 2010-09-10 2012-03-15 Merck Patent Gmbh Anthra[2,3-b:7,6b']dithiophene derivatives and their use as organic semiconductors
CN103168063B (zh) 2010-10-20 2016-11-23 默克专利股份有限公司 共轭聚合物
US20130248771A1 (en) 2010-12-06 2013-09-26 Merck Patent Gmbh Non-linear acene derivatives and their use as organic semiconductors
US8730416B2 (en) * 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
SG191179A1 (en) 2010-12-17 2013-07-31 Merck Patent Gmbh Conjugated polymers
KR20140011325A (ko) 2011-01-28 2014-01-28 메르크 파텐트 게엠베하 플라반트렌 유도체 및 유기 반도체로서의 이의 용도
CN103415526A (zh) 2011-03-11 2013-11-27 默克专利股份有限公司 二萘并[2,3-a:2’,3’-h]吩嗪类和它们作为有机半导体的用途
KR20140023923A (ko) 2011-03-11 2014-02-27 메르크 파텐트 게엠베하 공액 중합체
KR20140031876A (ko) 2011-03-25 2014-03-13 메르크 파텐트 게엠베하 피롤로[3,2-b]피롤-2,5-디온 및 유기 반도체로서의 그 용도
EP2699617A1 (de) 2011-04-18 2014-02-26 Merck Patent GmbH Konjugierte polymere
JP2014513743A (ja) 2011-05-16 2014-06-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 共役ポリマー
EP2726532B1 (de) 2011-06-28 2016-05-18 Merck Patent GmbH Indaceno-derivate als organische halbleiter
JP2014532084A (ja) 2011-07-08 2014-12-04 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 共役ポリマー
JP6101263B2 (ja) 2011-07-19 2017-03-22 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 有機半導体
EP2734527B1 (de) 2011-07-21 2018-01-10 Merck Patent GmbH Konjugierte polymere
CN103703007A (zh) 2011-07-27 2014-04-02 默克专利股份有限公司 小分子及其作为有机半导体的用途
US9590178B2 (en) 2011-09-28 2017-03-07 Merck Patent Gmbh Conjugated polymers
CN104024263A (zh) 2011-10-20 2014-09-03 默克专利有限公司 有机半导体
BR112014020228A2 (pt) 2012-02-15 2017-07-04 Merck Patent Ges Mit Beschraenkter Haftung polímeros conjugados
KR20140135747A (ko) 2012-02-15 2014-11-26 메르크 파텐트 게엠베하 공액 중합체
JP2015513572A (ja) 2012-02-16 2015-05-14 メルク パテント ゲーエムベーハー 有機半導体ポリマー
TWI635111B (zh) 2012-03-16 2018-09-11 馬克專利公司 共軛聚合物
KR102016198B1 (ko) 2012-04-25 2019-08-29 메르크 파텐트 게엠베하 공액 중합체
JP6345649B2 (ja) 2012-04-25 2018-06-20 メルク パテント ゲーエムベーハー 共役ポリマー
KR20150023515A (ko) 2012-06-04 2015-03-05 메르크 파텐트 게엠베하 유기 반도체
EP2856529A1 (de) 2012-06-05 2015-04-08 Merck Patent GmbH Kleine moleküle und deren verwendung als organische halbleiter
KR102128635B1 (ko) 2012-07-02 2020-06-30 메르크 파텐트 게엠베하 공액결합된 중합체
JP2015534585A (ja) 2012-08-24 2015-12-03 メルク パテント ゲーエムベーハー 共役系ポリマー
EP2922120A4 (de) * 2012-11-13 2016-11-30 Nec Corp Negativelektrodenaktivsubstanz, verfahren zur herstellung davon und lithiumsekundärzelle
US20150333263A1 (en) 2012-12-07 2015-11-19 Merck Patent Gmbh Polymer comprising a naphthalene group and its use in organic electronic devices
KR20150096783A (ko) 2012-12-18 2015-08-25 메르크 파텐트 게엠베하 티아디아졸 기를 포함하는 중합체, 그러한 중합체의 생산 및 유기 전자 소자에서의 그의 용도
US9590176B2 (en) 2013-03-14 2017-03-07 International Business Machines Corporation Controlling the conductivity of an oxide by applying voltage pulses to an ionic liquid
EP3010992B1 (de) 2013-06-21 2021-09-15 Raynergy Tek Inc. Konjugierte polymere
WO2015036075A1 (en) 2013-09-11 2015-03-19 Merck Patent Gmbh Cyclohexadiene fullerene derivatives
CN104513262A (zh) 2013-09-30 2015-04-15 默克专利股份有限公司 氮杂硼杂苯衍生物,它们的合成及其在有机电子器件中的用途
WO2015058827A1 (en) 2013-10-22 2015-04-30 Merck Patent Gmbh Conjugated polymers
WO2015067336A2 (en) 2013-11-06 2015-05-14 Merck Patent Gmbh Conjugated polymers
CN105764957B (zh) 2013-11-28 2020-04-21 默克专利股份有限公司 包含噻吩单元的多环聚合物、这类聚合物的生产方法和用途
EP3119776B1 (de) 2014-03-17 2019-12-11 Merck Patent GmbH Organische halbleiterverbindungen
CN106458815B (zh) 2014-03-31 2019-11-15 默克专利股份有限公司 稠合的双-芳基富勒烯衍生物
US10636974B2 (en) 2014-04-24 2020-04-28 The Trustees Of Columbia University In The City Of New York Molecular compositions, materials, and methods for efficient multiple exciton generation
CN106458808B (zh) 2014-06-17 2021-04-20 天光材料科技股份有限公司 富勒烯衍生物
JP6898224B2 (ja) 2014-07-29 2021-07-07 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ テトラ−ヘテロアリールインダセノジチオフェン系多環式ポリマーおよびそれらの使用
EP3070756B9 (de) 2015-03-18 2021-11-03 Raynergy Tek Inc. Halbleitermischungen mit nanopartikeln
JP6864635B2 (ja) 2015-05-12 2021-04-28 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ チアジアゾロピリジンポリマー、その合成およびその使用
EP3332432B1 (de) 2015-08-06 2019-08-21 Merck Patent GmbH Organische elektronische vorrichtung und deren herstellung
EP3151297A1 (de) 2015-09-30 2017-04-05 InnovationLab GmbH Konjugierte polymere mit thermisch abspaltbaren oxalatseitengruppen
US20190088891A1 (en) 2016-03-15 2019-03-21 Merck Patent Gmbh Organic semiconductors
US11130837B2 (en) 2016-03-15 2021-09-28 Raynergy Tek Incorporation Organic semiconductors
CN109415380A (zh) 2016-07-08 2019-03-01 默克专利有限公司 有机半导体化合物
CN109328189A (zh) 2016-07-08 2019-02-12 默克专利股份有限公司 稠合二噻吩并噻吩衍生物和其用作有机半导体的用途
US11098050B2 (en) 2016-08-11 2021-08-24 Merck Patent Gmbh Organic semiconducting compounds comprising a tetraazapyrene core
WO2018036914A1 (en) 2016-08-22 2018-03-01 Merck Patent Gmbh Organic semiconducting compounds
EP3504216A1 (de) 2016-08-29 2019-07-03 Merck Patent GmbH Auf 1,3-dithiol[5,6-f]benzo-2,1,3-thiadiazol oder 1,3-dithiol[6,7-g]chinoxalin basierende organische halbleiter
WO2018065350A1 (en) 2016-10-05 2018-04-12 Merck Patent Gmbh Organic semiconducting compounds
EP3306690B1 (de) 2016-10-05 2022-09-07 Raynergy Tek Inc. Organische halbleiterverbindungen
US11196005B2 (en) 2016-10-05 2021-12-07 Raynergy Tek Incorporation Organic semiconducting compounds
EP3533089A1 (de) 2016-10-31 2019-09-04 Merck Patent GmbH Organische halbleitende verbindungen
EP3333170B1 (de) 2016-12-06 2020-04-29 Merck Patent GmbH Asymmetrische polyzyklische verbindungen zur verwendung in organischen halbleitern
EP3592748A1 (de) 2017-03-09 2020-01-15 Merck Patent GmbH Organische halbleiterverbindungen
EP3665729B1 (de) 2017-08-11 2021-07-07 Raynergy Tek Inc. Organisches halbleitendes polymer
WO2019052935A1 (en) 2017-09-13 2019-03-21 Merck Patent Gmbh ORGANIC SEMICONDUCTOR COMPOUNDS
CN111315796B (zh) 2017-11-02 2023-11-24 天光材料科技股份有限公司 有机半导体化合物
WO2019091995A1 (en) 2017-11-10 2019-05-16 Merck Patent Gmbh Organic semiconducting compounds
WO2019154973A1 (en) 2018-02-12 2019-08-15 Merck Patent Gmbh Organic semiconducting compounds
US20210070770A1 (en) 2018-03-28 2021-03-11 Raynergy Tek Inc. Organic semiconducting compounds
US11839155B2 (en) 2018-03-28 2023-12-05 Raynergy Tek Inc. Organic semiconducting compounds
US20210280791A1 (en) 2018-04-27 2021-09-09 Raynergy Tek Incorporation Organic semiconducting polymers
US20220131078A1 (en) 2018-07-13 2022-04-28 Flexenable Ltd Organic semiconducting compounds
US20210367159A1 (en) 2018-09-06 2021-11-25 Raynergy Tek Incorporation Organic semiconducting compounds
WO2020161052A1 (en) 2019-02-06 2020-08-13 Merck Patent Gmbh Organic semiconducting polymers
WO2020178298A1 (en) 2019-03-07 2020-09-10 Raynergy Tek Inc. Organic semiconducting composition
US20220173321A1 (en) 2019-03-19 2022-06-02 Raynergy Tek Incorporation Organic semiconductors
US11930694B2 (en) 2020-06-08 2024-03-12 University Of Waterloo Polymer semiconductors containing acrylyl or acrylyl-like side chain and their devices
CN111769142B (zh) * 2020-06-23 2022-07-12 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法、显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873556A (en) * 1985-05-07 1989-10-10 Mitsubishi Denki Kabushiki Kaisha Hetero-junction device
US5107308A (en) * 1986-07-04 1992-04-21 Mitsubishi Denki Kabushiki Kaisha Field-effect transistor
JPH01259563A (ja) * 1988-04-08 1989-10-17 Mitsubishi Electric Corp 電界効果型トランジスタ
DE69018348T2 (de) * 1989-07-25 1995-08-03 Matsushita Electric Ind Co Ltd Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren.
US5206525A (en) * 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
JPH0469971A (ja) * 1990-07-10 1992-03-05 Sumitomo Chem Co Ltd 電界効果トランジスタ

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