JP4850389B2 - ドーピング方法およびそれを用いた半導体素子 - Google Patents
ドーピング方法およびそれを用いた半導体素子 Download PDFInfo
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- JP4850389B2 JP4850389B2 JP2003414550A JP2003414550A JP4850389B2 JP 4850389 B2 JP4850389 B2 JP 4850389B2 JP 2003414550 A JP2003414550 A JP 2003414550A JP 2003414550 A JP2003414550 A JP 2003414550A JP 4850389 B2 JP4850389 B2 JP 4850389B2
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 22
- 239000010408 film Substances 0.000 claims description 24
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 22
- 239000000969 carrier Substances 0.000 claims description 8
- FPOBXNYAWLLCGZ-UHFFFAOYSA-N nickel(2+);1,2,3,4,5-pentamethylcyclopenta-1,3-diene Chemical group [Ni+2].CC=1C(C)=C(C)[C-](C)C=1C.CC=1C(C)=C(C)[C-](C)C=1C FPOBXNYAWLLCGZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 6
- KZPXREABEBSAQM-UHFFFAOYSA-N cyclopenta-1,3-diene;nickel(2+) Chemical group [Ni+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KZPXREABEBSAQM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005309 stochastic process Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0895—Tunnel injectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
本発明による実施例を以下に示す。
Claims (17)
- メタロセン又はフラーレン誘導体を半導体表面に直接或いは間接的に付着させ、該メタロセン又はフラーレン誘導体から半導体表面への電荷移動により、半導体表面近傍にキャリアを発生させ、かつ、
前記メタロセン又はフラーレン誘導体は、半導体表面に吸着した分子の最高占有軌道のエネルギー準位が半導体表面の伝導帯下端より高くなる分子、又は最低非占有軌道のエネルギー準位が半導体表面の価電子帯上端より低くなる分子であることを特徴とするドーピング方法。 - 上記半導体表面に絶縁物薄膜を設け、その絶縁物薄膜を介して上記メタロセン又はフラーレン誘導体を付着させる請求項1に記載のドーピング方法。
- 上記半導体表面あるいは上記絶縁物薄膜にメタロセン又はフラーレン誘導体を付着させた後に絶縁物膜を堆積する請求項1または請求項2に記載のドーピング方法。
- 上記付着させたフラーレン誘導体がフッ素をC60に付加した分子である請求項1に記載のドーピング方法。
- 上記フッ素を付加したフラーレンがC60F36或いはC60F48である請求項4に記載のドーピング方法。
- 上記付着させたメタロセンがニッケロセンである請求項1に記載のドーピング方法。
- 上記付着させたニッケロセンがデカメチルニッケロセンである請求項6に記載のドーピング方法。
- 上記半導体がシリコン(Si)である請求項1に記載のドーピング方法。
- メタロセン又はフラーレン誘導体を半導体表面に直接或いは間接的に付着させ、該メタロセン又はフラーレン誘導体から半導体表面への電荷移動により、半導体表面近傍にキャリアを発生させて製造し、かつ、
前記メタロセン又はフラーレン誘導体は、半導体表面に吸着した分子の最高占有軌道のエネルギー準位が半導体表面の伝導帯下端より高くなる分子、又は最低非占有軌道のエネルギー準位が半導体表面の価電子帯上端より低くなる分子であることを特徴とする半導体素子。 - 上記半導体表面に絶縁物薄膜を設け、メタロセン又はフラーレン誘導体を絶縁膜表面に付着させ、該メタロセン又はフラーレン誘導体から半導体表面への電荷移動により、半導体表面付近にキャリアを発生させて製造したことを特徴とする請求項9に記載の半導体素子。
- 上記付着させたフラーレン誘導体がフッ素をC60に付加した分子である請求項9に記載の半導体素子。
- 上記フッ素を付加したフラーレンがC60F36或いはC60F48である請求項11に記載の半導体素子。
- 上記付着させたメタロセンがニッケロセンである請求項9に記載の半導体素子。
- 上記付着させたニッケロセンがデカメチルニッケロセンである請求項13に記載の半導体素子。
- 上記半導体がシリコン(Si)である請求項9に記載の半導体素子。
- 上記メタロセン又はフラーレン誘導体を付着した後に光を照射してキャリアを発生させて製造した請求項9又は10に記載の半導体素子。
- 上記メタロセン又はフラーレン誘導体を付着させた後に絶縁物膜を堆積し、その上にゲート電極を設けた請求項9又は10に記載の半導体素子。
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JP2003414550A JP4850389B2 (ja) | 2003-12-12 | 2003-12-12 | ドーピング方法およびそれを用いた半導体素子 |
US11/005,285 US7247548B2 (en) | 2003-12-12 | 2004-12-06 | Doping method and semiconductor device using the same |
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JP2003414550A JP4850389B2 (ja) | 2003-12-12 | 2003-12-12 | ドーピング方法およびそれを用いた半導体素子 |
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JP2005175254A JP2005175254A (ja) | 2005-06-30 |
JP4850389B2 true JP4850389B2 (ja) | 2012-01-11 |
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Families Citing this family (7)
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JP4779172B2 (ja) * | 2005-01-06 | 2011-09-28 | 独立行政法人産業技術総合研究所 | ドーピングされたカーボンナノチューブ及びその製造方法 |
JP5055737B2 (ja) * | 2005-09-30 | 2012-10-24 | サンケン電気株式会社 | 2次元キャリアガス層を有する電界効果トランジスタ |
US7799439B2 (en) * | 2006-01-25 | 2010-09-21 | Global Oled Technology Llc | Fluorocarbon electrode modification layer |
JP4873456B2 (ja) * | 2006-03-20 | 2012-02-08 | 独立行政法人産業技術総合研究所 | 有機半導体材料及びそれを用いた有機デバイス |
EP2528855A1 (en) | 2010-01-25 | 2012-12-05 | The Board of Regents of the Leland Stanford Junior University | Fullerene-doped nanostructures and methods therefor |
EP2529403A1 (en) * | 2010-01-25 | 2012-12-05 | The Board of Trustees of The Leland Stanford Junior University | Joined nanostructures and methods therefor |
JP6010172B2 (ja) * | 2015-04-06 | 2016-10-19 | 株式会社東芝 | 不揮発性半導体記憶装置 |
Family Cites Families (13)
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JPH0272634A (ja) * | 1988-09-07 | 1990-03-12 | Fujitsu Ltd | 半導体装置 |
JPH04158576A (ja) * | 1990-10-23 | 1992-06-01 | Toshiba Corp | 有機薄膜素子 |
JP3224829B2 (ja) * | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
JPH08167658A (ja) | 1994-12-15 | 1996-06-25 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPH0974217A (ja) * | 1995-09-07 | 1997-03-18 | Nippon Shokubai Co Ltd | 有機太陽電池 |
JP3060976B2 (ja) * | 1997-01-21 | 2000-07-10 | 日本電気株式会社 | Mosfetおよびその製造方法 |
US6472705B1 (en) * | 1998-11-18 | 2002-10-29 | International Business Machines Corporation | Molecular memory & logic |
JP2002204012A (ja) * | 2000-12-28 | 2002-07-19 | Toshiba Corp | 有機トランジスタ及びその製造方法 |
EP1291932A3 (en) * | 2001-09-05 | 2006-10-18 | Konica Corporation | Organic thin-film semiconductor element and manufacturing method for the same |
DE10160732A1 (de) * | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
US6960782B2 (en) * | 2002-04-30 | 2005-11-01 | International Business Machines Corporation | Electronic devices with fullerene layers |
JP4365568B2 (ja) * | 2002-09-06 | 2009-11-18 | 独立行政法人産業技術総合研究所 | ドーピング方法およびそれを用いた半導体素子 |
US20060024502A1 (en) * | 2004-07-30 | 2006-02-02 | Mcfarland Eric W | Electrodeposition of C60 thin films |
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- 2003-12-12 JP JP2003414550A patent/JP4850389B2/ja not_active Expired - Lifetime
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