JP2005175254A - ドーピング方法およびそれを用いた半導体素子 - Google Patents
ドーピング方法およびそれを用いた半導体素子 Download PDFInfo
- Publication number
- JP2005175254A JP2005175254A JP2003414550A JP2003414550A JP2005175254A JP 2005175254 A JP2005175254 A JP 2005175254A JP 2003414550 A JP2003414550 A JP 2003414550A JP 2003414550 A JP2003414550 A JP 2003414550A JP 2005175254 A JP2005175254 A JP 2005175254A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- metallocene
- fullerene derivative
- doping method
- semiconductor surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 24
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000012546 transfer Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 24
- 239000000969 carrier Substances 0.000 claims description 8
- FPOBXNYAWLLCGZ-UHFFFAOYSA-N nickel(2+);1,2,3,4,5-pentamethylcyclopenta-1,3-diene Chemical group [Ni+2].CC=1C(C)=C(C)[C-](C)C=1C.CC=1C(C)=C(C)[C-](C)C=1C FPOBXNYAWLLCGZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 6
- KZPXREABEBSAQM-UHFFFAOYSA-N cyclopenta-1,3-diene;nickel(2+) Chemical group [Ni+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KZPXREABEBSAQM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005309 stochastic process Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0895—Tunnel injectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
【解決手段】 本発明は、半導体表面にフラーレン誘導体分子およびメタロセン分子のうち電子親和力が大きい、或いはイオン化エネルギーの小さいものを付着させることにより、分子から半導体への電荷移動を誘起させ、半導体のドーピングを行う。
【選択図】図2
Description
本発明による実施例を以下に示す。
Claims (17)
- メタロセン又はフラーレン誘導体を半導体表面に直接或いは間接的に付着させ、該メタロセン又はフラーレン誘導体から半導体表面への電荷移動により、半導体表面近傍にキャリアを発生させることを特徴とするドーピング方法。
- 上記半導体表面に絶縁物薄膜を設け、その絶縁物薄膜を介して上記メタロセン又はフラーレン誘導体を付着させる請求項1に記載のドーピング方法。
- 上記半導体表面あるいは上記絶縁物薄膜にメタロセン又はフラーレン誘導体を付着させた後に絶縁物膜を堆積する請求項1または請求項2に記載のドーピング方法。
- 上記付着させたフラーレン誘導体がフッ素をC60に付加した分子である請求項1に記載のドーピング方法。
- 上記フッ素を付加したフラーレンがC60F36或いはC60F48である請求項4に記載のドーピング方法。
- 上記付着させたメタロセンがニッケロセンである請求項1に記載のドーピング方法。
- 上記付着させたニッケロセンがデカメチルニッケロセンである請求項6に記載のドーピング方法。
- 上記半導体がシリコン(Si)である請求項1に記載のドーピング方法。
- メタロセン又はフラーレン誘導体を半導体表面に直接或いは間接的に付着させ、該メタロセン又はフラーレン誘導体から半導体表面への電荷移動により、半導体表面近傍にキャリアを発生させて製造したことを特徴とする半導体素子。
- 上記半導体表面に絶縁物薄膜を設け、メタロセン又はフラーレン誘導体を絶縁膜表面に付着させ、該メタロセン又はフラーレン誘導体から半導体表面への電荷移動により、半導体表面付近にキャリアを発生させて製造したことを特徴とする請求項9に記載の半導体素子。
- 上記付着させたフラーレン誘導体がフッ素をC60に付加した分子である請求項9に記載の半導体素子。
- 上記フッ素を付加したフラーレンがC60F36或いはC60F48である請求項11に記載の半導体素子。
- 上記付着させたメタロセンがニッケロセンである請求項9に記載の半導体素子。
- 上記付着させたニッケロセンがデカメチルニッケロセンである請求項13に記載の半導体素子。
- 上記半導体がシリコン(Si)である請求項9に記載の半導体素子。
- 上記メタロセン又はフラーレン誘導体を付着した後に光を照射してキャリアを発生させて製造した請求項9又は10に記載の半導体素子。
- 上記メタロセン又はフラーレン誘導体を付着させた後に絶縁物膜を堆積し、その上にゲート電極を設けた請求項9又は10に記載の半導体素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003414550A JP4850389B2 (ja) | 2003-12-12 | 2003-12-12 | ドーピング方法およびそれを用いた半導体素子 |
US11/005,285 US7247548B2 (en) | 2003-12-12 | 2004-12-06 | Doping method and semiconductor device using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003414550A JP4850389B2 (ja) | 2003-12-12 | 2003-12-12 | ドーピング方法およびそれを用いた半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005175254A true JP2005175254A (ja) | 2005-06-30 |
JP4850389B2 JP4850389B2 (ja) | 2012-01-11 |
Family
ID=34650538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003414550A Expired - Lifetime JP4850389B2 (ja) | 2003-12-12 | 2003-12-12 | ドーピング方法およびそれを用いた半導体素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7247548B2 (ja) |
JP (1) | JP4850389B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007096203A (ja) * | 2005-09-30 | 2007-04-12 | Sanken Electric Co Ltd | 2次元キャリアガス層を有する電界効果トランジスタ |
JP2015128192A (ja) * | 2015-04-06 | 2015-07-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4779172B2 (ja) * | 2005-01-06 | 2011-09-28 | 独立行政法人産業技術総合研究所 | ドーピングされたカーボンナノチューブ及びその製造方法 |
US7799439B2 (en) * | 2006-01-25 | 2010-09-21 | Global Oled Technology Llc | Fluorocarbon electrode modification layer |
JP4873456B2 (ja) * | 2006-03-20 | 2012-02-08 | 独立行政法人産業技術総合研究所 | 有機半導体材料及びそれを用いた有機デバイス |
EP2528855A1 (en) | 2010-01-25 | 2012-12-05 | The Board of Regents of the Leland Stanford Junior University | Fullerene-doped nanostructures and methods therefor |
EP2529403A1 (en) * | 2010-01-25 | 2012-12-05 | The Board of Trustees of The Leland Stanford Junior University | Joined nanostructures and methods therefor |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0272634A (ja) * | 1988-09-07 | 1990-03-12 | Fujitsu Ltd | 半導体装置 |
JPH04158576A (ja) * | 1990-10-23 | 1992-06-01 | Toshiba Corp | 有機薄膜素子 |
JPH0548094A (ja) * | 1991-08-15 | 1993-02-26 | Toshiba Corp | 有機電界効果型素子 |
JPH0974217A (ja) * | 1995-09-07 | 1997-03-18 | Nippon Shokubai Co Ltd | 有機太陽電池 |
JPH10209445A (ja) * | 1997-01-21 | 1998-08-07 | Nec Corp | Mosfetおよびその製造方法 |
JP2000156423A (ja) * | 1998-11-18 | 2000-06-06 | Internatl Business Mach Corp <Ibm> | 電界効果トランジスタを含む超小型電子素子 |
JP2002204012A (ja) * | 2000-12-28 | 2002-07-19 | Toshiba Corp | 有機トランジスタ及びその製造方法 |
WO2003054970A1 (de) * | 2001-12-11 | 2003-07-03 | Siemens Aktiengesellschaft | Organischer feld-effekt-transistor mit verschobener schwellwertspannung und verwendung dazu |
JP2004103699A (ja) * | 2002-09-06 | 2004-04-02 | National Institute Of Advanced Industrial & Technology | ドーピング方法およびそれを用いた半導体素子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08167658A (ja) | 1994-12-15 | 1996-06-25 | Hitachi Ltd | 半導体装置およびその製造方法 |
EP1291932A3 (en) * | 2001-09-05 | 2006-10-18 | Konica Corporation | Organic thin-film semiconductor element and manufacturing method for the same |
US6960782B2 (en) * | 2002-04-30 | 2005-11-01 | International Business Machines Corporation | Electronic devices with fullerene layers |
US20060024502A1 (en) * | 2004-07-30 | 2006-02-02 | Mcfarland Eric W | Electrodeposition of C60 thin films |
-
2003
- 2003-12-12 JP JP2003414550A patent/JP4850389B2/ja not_active Expired - Lifetime
-
2004
- 2004-12-06 US US11/005,285 patent/US7247548B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0272634A (ja) * | 1988-09-07 | 1990-03-12 | Fujitsu Ltd | 半導体装置 |
JPH04158576A (ja) * | 1990-10-23 | 1992-06-01 | Toshiba Corp | 有機薄膜素子 |
JPH0548094A (ja) * | 1991-08-15 | 1993-02-26 | Toshiba Corp | 有機電界効果型素子 |
JPH0974217A (ja) * | 1995-09-07 | 1997-03-18 | Nippon Shokubai Co Ltd | 有機太陽電池 |
JPH10209445A (ja) * | 1997-01-21 | 1998-08-07 | Nec Corp | Mosfetおよびその製造方法 |
JP2000156423A (ja) * | 1998-11-18 | 2000-06-06 | Internatl Business Mach Corp <Ibm> | 電界効果トランジスタを含む超小型電子素子 |
JP2002204012A (ja) * | 2000-12-28 | 2002-07-19 | Toshiba Corp | 有機トランジスタ及びその製造方法 |
WO2003054970A1 (de) * | 2001-12-11 | 2003-07-03 | Siemens Aktiengesellschaft | Organischer feld-effekt-transistor mit verschobener schwellwertspannung und verwendung dazu |
JP2004103699A (ja) * | 2002-09-06 | 2004-04-02 | National Institute Of Advanced Industrial & Technology | ドーピング方法およびそれを用いた半導体素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007096203A (ja) * | 2005-09-30 | 2007-04-12 | Sanken Electric Co Ltd | 2次元キャリアガス層を有する電界効果トランジスタ |
JP2015128192A (ja) * | 2015-04-06 | 2015-07-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
US20050130395A1 (en) | 2005-06-16 |
JP4850389B2 (ja) | 2012-01-11 |
US7247548B2 (en) | 2007-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
RU2245589C2 (ru) | Устройство полевого моп-транзистора и способ его изготовления | |
JP6671371B2 (ja) | トンネル電界効果トランジスタ及びその製造方法 | |
US20070290193A1 (en) | Field effect transistor devices and methods | |
CN1828908A (zh) | 半导体结构及制造半导体结构的方法 | |
CN103299445A (zh) | 基于石墨烯和碳纳米管的辐射加固晶体管 | |
KR101824048B1 (ko) | 반도체 소자 및 그의 제조 방법, 그리고 반도체 집적 회로 | |
TW200402834A (en) | Method of forming a semiconductor device in a semiconductor layer and structure thereof | |
CN108807553B (zh) | 一种基于二维半导体材料的同质pn结及其制备方法 | |
JP2006351583A (ja) | 半導体装置およびその製造方法 | |
JP2013187291A (ja) | トンネル電界効果トランジスタの製造方法及びトンネル電界効果トランジスタ | |
JP4850389B2 (ja) | ドーピング方法およびそれを用いた半導体素子 | |
US6555451B1 (en) | Method for making shallow diffusion junctions in semiconductors using elemental doping | |
Riederer et al. | Alternatives for Doping in Nanoscale Field‐Effect Transistors | |
US20070096107A1 (en) | Semiconductor devices with dielectric layers and methods of fabricating same | |
CN103730370B (zh) | 提升mosfet性能和nbti的方法和结构 | |
KR20170015645A (ko) | 트랜지스터 및 트랜지스터 제조방법 | |
JP2007525026A (ja) | ショットキ・コンタクトを形成するために半導体上に導電性炭素材料を堆積するための方法、及び半導体コンタクト・デバイス | |
Lee et al. | A high-performance polycrystalline silicon thin film transistor with a silicon nitride gate insulator | |
JP2005101602A (ja) | 高耐圧電界効果トランジスタ及びこれの形成方法 | |
US6979580B2 (en) | Process for controlling performance characteristics of a negative differential resistance (NDR) device | |
JP2523019B2 (ja) | 電界効果型半導体装置 | |
KR101096980B1 (ko) | 반도체 소자의 제조 방법 | |
JP4365568B2 (ja) | ドーピング方法およびそれを用いた半導体素子 | |
JP2005116725A (ja) | 半導体装置及びその製造方法 | |
JPH0897398A (ja) | 量子効果装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061101 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080729 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100706 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100825 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110303 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111011 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111019 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4850389 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141028 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
EXPY | Cancellation because of completion of term |