CN100419906C - 存储器单元 - Google Patents

存储器单元 Download PDF

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CN100419906C
CN100419906C CNB018235379A CN01823537A CN100419906C CN 100419906 C CN100419906 C CN 100419906C CN B018235379 A CNB018235379 A CN B018235379A CN 01823537 A CN01823537 A CN 01823537A CN 100419906 C CN100419906 C CN 100419906C
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memory cell
organic
layer
functional area
metal
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CN1543652A (zh
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J·H·克里格尔
N·F·尤丹诺夫
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Abstract

发明涉及计算机工程领域并可用于不同种类计算机的存储器装置中，也可用于发展新世代的影像与声音设备，用于发展关联存储器系统，以及生成用于类神经网络之突触(synapses)(具有可编程的电子阻抗的电子电路组件)。本发明的存储器单元可提供存储数个数据位并具有高速切换。所述存储器单元包含二个连续的铝电极1与2，介于该铝电极1与2之间具有由作用层3、阻障层4以及被动层5所构成之多层功能区域。

Description

存储器单元
技术领域
本发明系有关于计算机工程领域并可应用于不同种类计算机之存储器装置中，在于发展相联存储器系统，在于生成用于类神经网络之突触(synapses)(其系指具有可程序电子阻抗之电子电路组件)，在于发展对应直接存取的数据库以及在于发展新世代的影像与声音设备。
背景技术
现代计算机运用在写入速度、存储时间、存取时间以及读取时间上具有不同特性之多种用途的存储器装置。此种情况本质上的使计算机系统运作复杂化，增加计算机启动时间且令数据存储时间复杂化。
于微电子领域中多数优先任务的其中之一便是制造伴随有长存储时间与高信息密度且具有高读取写入速度之通用存储器系统。此外，制造一种应用于类神经计算机之简单且有效率的突触组件亦为目前所亟需者。此种组件的缺乏则阻碍了真实类神经计算机之发展。
于此同时，在物理原理的潜在可能性下现今电子设备所依据者几乎已经耗用殆尽。现今密集的研究工作锁定在基于应用分子材料与超分子总体之分子电子概念寻找用于电子设备的新原理。
文章「1」与「2」包含当以电子结构不稳定为基础之物理原理系可能时，应用小型传导系统之电子结构不稳定性的可能性分析，更具体而言，用以发展新世代的存储器装置。讨论该现象的假设原理的工作以及分析定义其本身特性之条件与参数。其亦包含于一维分子结构上的数据以及讨论该结构不稳定的特性，并分析用于一维系统导电性之静态与动态控制的可能性。
前述之物理原理开启了依据新的数据存储与转换机制以及新材料的选用设计存储器装置的前景。十分明显的便是分子电子的潜在可能性透过通过电子作用突触所连结的神经元所构成的类神经网络将有更大幅度的发现。应用分子电子方法以发展人工神经元以及连结于通用网络中多种类型的感应器将开启实现包含于类神经计算机思想体系之所有潜在可能性的一条道路，其将提供一种本质上为新类型的信息处理与计算系统并更接近制造人工智能问题的解决途径。
现今包含有可被用以存储信息的存储器单元之公知装置(请参照美国专利第6055180号，其国际分类码为G11C 11/36，2000)。
公知装置的主要缺点在于仅容许写入信息一次。此外，该信息的读取系透过光学方式予以完成。由于不容易定位光学射线之故，因此应用光学装置致令存储器设备体积较大且更加复杂同时也降低读取的信赖性。一种揭露于前述专利中之不同的写入方法系应用皆缘自施加高电压所产生的热崩溃效应。此种写入方法的缺点在于其亦仅只允许一次的信息记录且需要利用该电场的高电压。
现今还有具有三层结构之存储器单元，该存储器单元系由于二电极间具有高温分子化合物之三层结构所组成(请参照日本专利第62-260401号专利，国际分类码为H01C 7/10，C23C14/08，H01B 1/12，1990，以及文章「4」)。该公知的存储器单元依据透过施加外部电场以改变该分子化合物的电子阻抗之原理。该分子本体导电性可为二差异极大的程度，借以允许存储一位的信息。
由于必须要长时间以切换该电阻以及该高电压(约60伏特)之故，前述的公知存储器装置的主要缺点在于具有较低的运作速度。此种缺点明显的限制了该单元于现今电子装置上的用途。
此外尚具有三层结构的公知存储器装置，该存储器装置系由二电极以及介于其间低温分子化合物等三层结构所组成(请参照美国专利第465894号，国际分类码为H01L 29/28，1987，文章「3」)。该公知的存储器单元之运作亦系依据透过施加外部电场以切换该分子化合物的电子阻抗为之。然而，此种装置不若前述的装置，其具有典型的短电阻切换时间与低操作电压。
该公知技术解决方法其主要缺点如下：由于该存储器单元系应用低温分子化合物，故其于物理上无法提供将现有的半导体制造技术与其所提供的存储器单元制造技术相结合，此外，更重要的是在其无法于热传导方面有足够的抵抗性且仅能承受至多摄氏150度的温度。如此将导致此中存储器单元无法于现今的高达摄氏400度的半导体制造技术中予以使用。
其次，此种公知的存储器单元仅能存储一位的信息，因而妨碍具有高信息密度装置的发展。
此外，其所应用的材料之物理特性致令写入-读取-拭除周期信赖性的不足。
前述所有之公知存储器单元具有一共同的缺点，即为仅能除存储一位的信息。
发明内容
本发明系依据制造具有存储数个信息位的新类型存储器单元的问题而产生，该存储器单元具有较短的阻抗切换时间与较低的操作电压且同时可允许将本发明之制造技术与现今的半导体制造技术相结合。
前述所提及的问题系透过如下的方式予以解决：本发明之存储器单元具有由二电极间包含有功能区域的三层结构所组成。其可应用金属及/或半导体及/或具导电性聚合物及/或光学穿透氧化物或硫化物等材料制造该电极，而应用有机、金属有机与无机材料制造该功能区域，透过将不同类型的作用组件置入该些材料的分子中及/或结晶结构中，并于外部电场及/或光发射的影响下依据改变该些材料本身之状态或位置借以相互结合该些材料及/或形成群组。
本发明之存储器单元结构提供制造一种具有单一位与多位信息写入、存储以及读取方法的存储器组件。同时信息系以该功能区域电阻值之形式予以存储。于具有单一位之存储器单元存储模式下具有二种阶段：高(例如以「0」表示)与低(例如以「1」表示)，而于具有多位之存储器单元存储模式下则相应于特述的信息位而具有多种阶段。举例而言，于双位单元的情况下其具有四种阶段的阻抗，于四位单元则具有十六种阶段的阻抗。本发明之存储器单元与现今的存储器单元明显的差异点在于当存储信息时不需要非中断(non-interrupted)的电源供应。信息存储时间系依据应用于该功能区域之材料等存储器单元的结构以及纪录模式而定。该存储器单元可由数秒钟的存储形式(可用于建立动态存储器)转换至数年的存储形式(可用于建立如闪存之长时间存储器)。
以具有作用组件之有机与金属有机共轭聚合物置入该主要电路及/或与该主要电路或平面相连结及/或置入该结构中，透过该些组件形成或不形成光发射结构等为基础，将有助于实现该存储器单元功能区域之组成；或以通过逐渐滴入包括分子离子之正或负离子于有机、金属有机与无机材料中的方式组成，及/或以固态电解质或具有包含电子偶极组件的分子及/或离子为基础通过逐渐滴入的群组之方式组成；及/或透过由固态聚合物与无机铁电为基础之群组所组成；及/或透过施体(donor)与受体(acceptor)分子所组成；及/或通过有机及/或无机盐及/或酸及/或水分子所组成；及/或透过可于电场中及/或光发射下分离之分子所组成；及/或透过无机及/或金属有机及/或有机盐及/或具有可变的金属原子价或其所包含的原子群组所组成。前述之该些功能区域实现方式可提供制造一种在存储器单元上的外部电场及/或光发射的影响下可以改变该作用层电阻及/或形成高导电性区域或线路之结构且在不施加外部电场的情况下长时间的保持此种状态。
该存储器单元作用区域之作用组件的其中之一者，系可有效率的应用分子及/或电子偶极组件离子及/或透过以固态聚合物与无机铁电为基础所逐渐滴入组成的群组而予以实现，以确保该存储器单元可透过低施加电压操作。由于该铁电组件存在之故而增加该内部电场强度且必然的导致于写入信息时较低的外部电子电压之适用。
令人关注的前景在于以由多数具有多种阶段作用性层所组成的多层结构实现该功能区域，举例而言，应用有机、金属有机与无机等材料予以实现，其中该些材料的分子及/或结晶结构将具有逐渐滴入形成的作用组件及/或以该些材料为基础所成的群组，该些材料会于外部电场或光发射的影响下改变其状态，据此提供增加电子阻抗阶段的范围与数量，借以增加该存储器数据密度。
以具有交替的作用、被动与阻障层之多层结构所形成之功能区域系可适当的予以实现，其中该被动层可由有机、金属有机与无机材料所组成，该些材料系施体及/或受体充电载体并拥有离子及/或电子导电性，而该阻障层系由高电子导电性与低离子导电性的材料组成，且由于增加该存储器单元电子阻抗存储值的数量之故，其可于增进该存储器单元于时间方面的稳定性之同时增加数据密度。
实现该存储器单元的电极较佳的系以形成数个分离组件方式为之，例如二或三个组件置于该功能层之上，其将允许更精确的控制该单元电子阻抗的值，借以增加信息纪录的数量或增进该存储器单元电子阻抗模拟值的精确性，且亦允许该信息写入与读取电路之退耦(decouple)。
透过半导体及/或有机发光材料于空间处以分离的二组件的形式形成该存储器单元电极系有所助益的，举例而言，无论系二极管结构、光阻或光感应组件均无不可，该些材料允许该信息写入与读取电子电路以电子的或光学的方式退耦。
透过半导体及/或有机发光材料以及形成如发光结构与光阻或光感应组件等于空间处以分离的三平行组件之形式形成该存储器单元电极亦系有所助益的，该些材料允许该信息写入与读取电子电路以光学的方式退耦。
附图说明
图1至20系用以显示实现本发明之存储器单元的多种态样。
图1系用以显示本发明之具有二连续电极以及一作用功能区域的存储器单元之示意图；
图2系用以显示本发明之具有二连续电极以及单层功能区域的存储器单元之示意图；
图3至8系用以显示本发明之具有二连续电极以及多层功能区域的存储器单元之示意图；
图9系用以显示本发明透过单层功能区域、连续电极以及由二组件所组成的电极所形成之存储器单元的示意图；
图10、11系用以显示本发明透过多层功能区域、连续电极以及由二组件所组成的电极所形成之存储器单元的示意图；
图12系用以显示本发明透过单层功能区域以及二个分别由二组件所组成的电极所形成之存储器单元的示意图；
图13、14系用以显示本发明透过多层功能区域以及二个分别由二组件所组成的电极所形成之存储器单元的示意图；
图15系用以显示本发明透过单层功能区域、连续电极以及由三组件所组成的电极所形成之存储器单元的示意图；
图16、17系用以显示本发明透过多层功能区域、连续电极以及由三组件所组成的电极所形成之存储器单元的示意图；
图18至20系用以显示本发明透过具有电子或光学退耦组件的多层功能区域所形成之存储器单元的示意图；
图21系用以说明本发明之存储器单元操作信息写入、拭除以及读取的原理；以及
图22系用以显示本发明之存储器单元操作信息写入、拭除以及读取时电压与电流之波形图。
具体实施方式
以下系通过特定的具体实施例说明本发明之实施方式，熟悉此技艺之人士可由本说明书所揭示之内容轻易地了解本发明之其它优点与功效。本发明亦可通过其它不同的具体实施例加以施行或应用，本说明书中的各项细节亦可基于不同观点与应用，在不悖离本发明之精神下进行各种修饰与变更。
本发明之存储器单元(如图1至8所示)包含二连续的铝电极1与2，于该铝电极1与2之间具有由一作用层所组成的单层功能区域，该作用层可参杂离子3或电解质群组3a(如图1、2所示)或二作用参杂层3b与3c(如图3所示)或二具有透过阻障层4所分离的电解质群组3d与3e之作用层(如图4所示)等所组成。图5至8显示该多层功能区域系由一作用层3以及一被动层5(如图5所示)或由一作用层3、一阻障层4以及一被动层5(如图7所示)或由二作用层3b与3c、一阻障层4以及二被动层5a与5b(如图8所示)所组成。
于图9至11中该存储器单元包含铝电极1与2，其中于顶部的电极1由二组件1a与1b所组成。于该二电极之间具有一单层功能区域，该单层功能区域系由一作用层3(如图9所示)所组成，或由一作用层3与一被动层5(如图10所示)所组成的多层功能区域，或由一作用层3、一阻障层4以及一被动层5(如图11所示)所组成的多层功能区域。
图12至14中显示该具有铝电极1与2之存储器单元，每一个该铝电极1与2系分别由二组件1a与1b以及2a与2b所组成。介于该电极间具有一单层功能区域，该单层功能区域系由一作用层3(如图12所示)所组成，或由一作用层3与一被动层5(如图13所示)所组成的多层功能区域，或由一作用层3、一阻障层4以及一被动层5(如图14所示)所组成的多层功能区域。
图15至17中显示该具有铝电极1与2之存储器单元，其中于顶部的电极1由二组件1a、1b与1c所组成。于该二电极之间具有一单层功能区域，该单层功能区域系由一作用层3(如图15所示)所组成，或由一作用层3与一被动层5(如图16所示)所组成的多层功能区域，或由一作用层3、一阻障层4以及一被动层5(如图17所示)所组成的多层功能区域。
于图18至20中所显示之存储器单元具有二连续的铝电极1与2，介于该铝电极1与2间系为多层功能区域6，该多层功能区域6可以类似于图3至8所示之方式予以形成且设置有如下的电子退耦组件：电极7以及由半导体或有机材料而形成有二极管结构之层8(如图18所示)，或具有如下之光学退耦组件：由导电与光学穿透材料所形成之附加电极9，以及由半导体或有机材料而形成有光阻或光感应组件之层10(如图19所示)，或具有如下之光学退耦组件：由导电材料所形成之电极7以及二由半导体及/或有机材料所形成之层10与11，该层10与11系透过由导电与光学穿透性材料所形成的电极9予以分离且形成光二极管或发光结构11以及光阻或光感应组件10(如图20所示)。
为说明本发明之存储器单元操作信息写入、拭除以及读取的原理请参阅图21，其包含由可程序电流产生器所构成之特别测试产生器12并于信息记录期间提供可控制电流位准并于读取期间固定电压，以及于拭除期间形成负脉冲；一存储器单元其包括有电极1与2以及功能区域6，其可以前述第1至17图所示的其中之一形式予以实现；镇流电阻13以及可以电压计、记录器或示波器等予以实现之电压暂存装置14与15。流过该存储器单元之电流值系透过测量该镇流电阻13上的电压而取得。
该装置系以如下之方式运作：该测试产生器12生成一超过该临界值23之电压脉冲16(如图22所示)。于该写入电流脉冲值19达到该预设程度之后，该产生器12切换至读取模式并形成读取电压18。该读取电压18明显的低于该临界值23。当该控制的写入电流值19达到该预设的程度时该写入作业被视为完成，当写入作业被视为完成所施加的电压被切断。依据该流过该镇流电阻13的电流值22(a至d)该存储器单元电阻之值可以被计算出来，且该些电阻值可对应至特定的信息位，举例而言，于双位存储器单元中：
-电流22a对应值「00」；
-电流22b对应值「01」；
-电流22c对应值「10」；
-电流22d对应值「11」。
该信息存储期间依据所利用之该选定功能区域结构与材料与该对应存储器单元电子阻抗值的数量相同。透过该产生器12以发送负电压脉冲17之方式拭除该信息。当该控制的拭除电流值20达到预设的程度时该拭除作业视为完成且随之将所施加的电子电压予以切断。于拭除作业完成后该存储器单元通过非常高的该功能区域6电阻回复至初始状态。于图2所示之存储器单元结构中，于每一次写入作业前必须将该单元回复至拭除该纪录信息的初始状态。
兹就本发明之存储器单元之多种实施例予以说明如下：
实施例一：
该存储器单元(如图1与2所示)系具有三层结构，该三层结构系由二铝电极1与2以及于该铝电极1与2之间所具有多酚乙炔3或参杂有锂离子的聚二酚乙炔3a所组成。该存储器单元之程序系透过施加大于该具有同时流过该单元的电流控制的临界值之电场脉冲而完成(或该电阻值或该施加电压脉冲的期间或值)。当该控制的值(电流或电阻)到预设的程度时该写入作业被视为完成，之后该施加的电压被切断。该信息的读取系透过施加低于具有同时的电流值记录或控制电阻值等值之电子电压脉冲予以完成。于透过控制流过该单元之电流(或该电阻值或该施加电压脉冲的期间或值)施加反向(负)电子电压脉冲时产生拭除作业。于该控制值(电流或电阻)达到该预设的程度时拭除作业被视为完成，随后所施加的反向电压被切断。
实施例二：
该存储器单元(如图3、4所示)系具有三层结构，该三层结构系由二铝电极1与2以及介于该铝电极1与2间具有通过氮化锂4所分离之二多酚乙炔3b与3c层或二参杂有锂离子的聚二酚乙炔3d或3e层所组成。该存储器单元信息写入、读取以及拭除系透过前述实施例一之方法予以完成。此种单元可长时间的存储信息。
实施例三：
该存储器单元(如图5所示)系具有三层结构，该三层结构系由二铝电极1与2以及介于该铝电极1与2间具有氧化硅或氮化硅或聚stirole 3(polystirole)以及铜或银halcogenide化合物(silver halcogenide)之被动层5所组成。该存储器单元信息写入、读取以及拭除系透过前述实施例一之方法予以完成。此种单元可长时间的存储信息。
实施例四：
该存储器单元(如图1所示)系具有三层结构，该三层结构系由二铝电极1与2以及介于该铝电极1与2间之多酚乙炔或参杂有chloranil或tetracyano-quino-dimethane分子的聚二酚乙炔。该存储器单元信息写入、读取以及拭除系透过前述实施例一之方法予以完成。快速切换系该单元之特性。
实施例五：
该存储器单元(如图5所示)系具有三层结构，该三层结构系由二铝电极1与2以及介于该铝电极1与2间具有聚anyline(polyanyline)层3以及被动之氢化钯层5所组成。该存储器单元信息写入、读取以及拭除系透过前述实施例一之方法予以完成。快速切换系该单元之特性。
实施例六：
该存储器单元(如图16所示)系具有三层结构，该三层结构系由二铝电极所组成，其中之一铝电极(于顶部者)系由三组件1a、1b以及1c所组成。该功能层3系由多酚乙炔或聚二酚乙炔所组成，且该被动层5系由参杂有锂离子之铌halcogenide化合物(niobiumhalcogenide)或铜halcogenide化合物(copper halcogenide)所组成。该存储器单元信息写入系透过施加电场脉冲至该底部电极2以及该顶部电极之中间组件1c予以实现。该脉冲值超过该临界值23。于此同时介于该顶部电极之终端组件1a与1b间的电子阻抗被控制。于该控制的电子阻抗值达到预设之程度时该写入作业被视为完成且随后所施加的电子电压被切断。在该单元读取信息系透过利用低电压脉冲测量介于该顶部电极之终端组件1a与1b间的电子阻抗而予以实现。拭除该存储器单元系透过施加反向(负)电场脉冲至该底部电极2以及该顶部电极之中间组件1c且同时控制介于该顶部电极之终端组件1a与1b间的电子阻抗而予以实现。于该控制值(电流或电阻)达到该预设的程度时拭除作业被视为完成，随后所施加的反向电压被切断。由于写入与读取电路的退耦之故该存储器单元具有较高的信息密度且必然可更精确的控制已被写入的存储器单元之电子阻抗值。
实施例七：
该存储器单元(如图1所示)系具有多层结构，该多层结构系由四电极1、2(由铝所制成)、7(由镁所制成)以及9(由可导电穿透之氧化铟所制成)所组成。该功能区域6对应至图16中所示之该功能区域且系由多酚乙炔或聚二酚乙炔所组成，且该被动层5系由参杂有锂离子之铌halcogenide化合物(niobium halcogenide)或铜halcogenide化合物(copper halcogenide)所组成。层11系由多酚乙烯撑所制成并形成一发光结构。层10系由半导体或有机材料所制成且系为一光感应结构。该发光层11以及该光感应层10系透过由可导电与穿透之氧化铟所制成的电极9而分离。该存储器单元之信息写入与拭除系透过前述实施例一中施加电压至该电极1与7之方法予以完成。读取系通过施加低于低于该临界值之电压脉冲至电极1与2且同时控制介于该电极2与9间之电阻或电压予以完成。由于写入与读取电路的光学退耦之故该存储器单元具有较高的信息密度且必然可更精确的控制已被写入的存储器单元之电子阻抗值。
上述实施例仅为例示性说明本发明之原理及其功效，而非用于限制本发明。例如，上述电极由金属及/或半导体及/或导电性聚合物以及光学传导性氧化物或硫化物所制成，而该功能区作为作用区，并通过逐渐滴入有机及/或无机盐及/或酸及/或水分子，或通过逐渐滴入透过无机及/或金属有机及/或有机盐及/或具有可变的金属原子价或其所包含的原子群组，而由有机、金属有机与无机材料所组成。任何熟习此项技艺之人士均可在不违背本发明之精神及范畴下，对上述实施例进行修饰与变化。因此，本发明之权利保护范围，应如后述之申请专利范围所列。
产业利用性：
本发明之存储器单元的原型被建立且透过一利用测试产生器的特定装置与以测试。具有连续铝电极之实施例系与具有置于该电极间参杂有锂离子的聚共轭聚合物多酚乙炔之二或三个铝电极之实施例相同。该底部铝层喷洒有玻璃基材而该顶部电极则喷洒有共轭聚合物层。该所使用之共轭聚合物可耐热至摄氏400度，以容许将本发明之存储器单元的制造与半导体装置的制造相结合。该测试证实制造具有存储多数位的数字信息功能之存储器单元以及形成多种该电子阻抗程度之模拟值系有其可能性的，因此亦允许该存储器单元应用于类神经网络中之突触。藉此本发明之存储器单元本质上可被视为可用以存储数字或模拟形式信息之新类型装置。

Claims (25)

1. 一种存储器单元，该存储器单元具有三层结构，该三层结构是由二电极以及介于该二电极间的功能区域所组成者，其特征在于该电极由金属及/或半导体及/或导电性聚合物以及光学传导性氧化物或硫化物所制成，而应用有机、金属有机与无机材料制造该功能区域，透过将不同类型的作用组件置入这些材料的分子中及/或结晶结构中，并于外部电场及/或光发射的影响下依据改变这些材料本身的状态或位置借以相互结合这些材料及/或形成群组。
2. 如权利要求1所述的存储器单元，其中，该电极由多个组件所形成，且于空间中以及电性上相互分离。
3. 如权利要求1或2所述的存储器单元，其中，该电极由置于该功能区域顶部的二或三个分离的组件所组成。
4. 如权利要求1所述的存储器单元，其中，该功能区域是通过逐渐滴入包括分子离子的正或负离子于有机、金属有机与无机材料中的方式组成。
5. 如权利要求1所述的存储器单元，其中，该功能区域是作为作用层，并通过逐渐滴入由固态电解质为基础的群组，而由有机、金属有机与无机材料所组成。
6. 如权利要求1所述的存储器单元，其中，该功能区域是作为作用层，并通过逐渐滴入分子及/或具有电子偶极组件的离子，而由有机、金属有机与无机材料所组成。
7. 如权利要求1所述的存储器单元，其中，该功能区域是作为作用层，并通过逐渐滴入由固态聚合物与无机铁电为基础的群组，而由有机、金属有机与无机材料所组成。
8. 如权利要求1所述的存储器单元，其中，该功能区域是作为作用层，并通过逐渐滴入施体与受体分子，而由有机、金属有机与无机材料所组成。
9. 如权利要求1所述的存储器单元，其中，该功能区域是作为作用层，并通过逐渐滴入有机及/或无机盐及/或酸及/或水分子，而由有机、金属有机与无机材料所组成。
10. 如权利要求1所述的存储器单元，其中，该功能区域是作为作用层，并通过逐渐滴入可于电场中及/或光发射下分离的分子，而由有机、金属有机与无机材料所组成。
11. 如权利要求1所述的存储器单元，其中，该功能区域是作为作用层，并通过逐渐滴入透过无机及/或金属有机及/或有机盐及/或具有可变的金属原子价或其所包含的原子群组，而由有机、金属有机与无机材料所组成。
12. 如权利要求1所述的存储器单元，其中，该功能区域是作为作用层，并由有机、金属有机与无机材料所组成，该作用层由具有作用组件的有机与金属有机共轭聚合物置入该主要电路及/或与该主要电路或平面相连结及/或置入该结构中所组成，透过这些组件以形成或不形成光发射结构等为基础。
13. 如权利要求1所述的存储器单元，其中，该功能区域是作为多层结构，该多层结构是由数个不同作用层所组成，且这些作用层是由有机、金属有机与无机材料予以组成，其中这些材料的分子及/或结晶结构将具有逐渐滴入形成的作用组件及/或以这些材料为基础所成的群组，这些材料会于外部电场或光发射的影响下改变其状态。
14. 如权利要求1所述的存储器单元，其中，该功能区域是作为多层结构，且是由选自由作用、被动、阻障、发光以及光感应层所构成的群组中的至少两个层所构成，这些层是由有机、金属有机与无机材料所组成的不同作用层的电极予以相互分离，其中这些材料的分子及/或结晶结构将具有逐渐滴入形成的作用组件及/或以这些材料为基础所成的群组，这些材料会于外部电场或光发射的影响下改变其状态。
15. 如权利要求14所述的存储器单元，其中，多层结构应用于该功能区域，该多层结构是由可替换的具有光学或电子退耦组件的作用与被动层所组成。
16. 如权利要求14所述的存储器单元，其中，该被动层由有机、金属有机与无机材料所组成，这些材料是施体及/或受体充电载体并拥有离子及/或电子导电性。
17. 如权利要求14所述的存储器单元，其中，该阻障层由高电子导电性与低离子导电性的材料组成。
18. 如权利要求14所述的存储器单元，其中，对于该功能区域，该多层结构为双层结构，该双层结构由作用层与被动层所组成。
19. 如权利要求14所述的存储器单元，其中，对于该功能区域，该多层结构为双层结构，该双层结构由通过金属有机与无机材料且具有高电子导电性与低离子导电性的材料组成的作用层与被动层所组成。
20. 如权利要求14所述的存储器单元，其中，对于该功能区域，该多层结构为三层结构，该三层结构具有二外部作用层与置于该二外部作用层间的阻障层。
21. 如权利要求14所述的存储器单元，其中，对于该功能区域，该多层结构为四层结构，该四层结构具有二作用层并透过作为阻障层的第三层以分离该二作用层，其中复具有一作为被动层的第四层。
22. 如权利要求14所述的存储器单元，其中，对于该功能区域，该多层结构为五层结构，该五层结构是具有二外部被动层以及置于该被动层间并透过作为阻障层的第五层所分离的二作用层。
23. 如权利要求15所述的存储器单元，其中，该电子退耦组件由附加电极予以实现，该附加电极由导电材料与半导体层及/或有机材料所形成的二极管结构所组成。
24. 如权利要求15所述的存储器单元，其中，该电子退耦组件由附加电极予以实现，该附加电极由导电材料、光学穿透性材料与半导体层及/或有机材料所形成的光阻或光感应组件所组成。
25. 如权利要求15所述的存储器单元，其中，该电子退耦组件由附加电极予以实现，该附加电极由导电材料与透过第二附加电极所分离的二半导体层及/或有机材料，该第二附加电极由导电与光学穿透性材料所组成并形成光二极管或发光结构以及光阻或光感应组件。
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