NO973993L - Leseminne og leseminneinnretninger - Google Patents

Leseminne og leseminneinnretninger

Info

Publication number
NO973993L
NO973993L NO973993A NO973993A NO973993L NO 973993 L NO973993 L NO 973993L NO 973993 A NO973993 A NO 973993A NO 973993 A NO973993 A NO 973993A NO 973993 L NO973993 L NO 973993L
Authority
NO
Norway
Prior art keywords
read
memory
memories
implemented
semiconductor substrate
Prior art date
Application number
NO973993A
Other languages
English (en)
Other versions
NO973993D0 (no
Inventor
Hans Gude Gudesen
Geirr I Leistad
Per-Erik Nordal
Original Assignee
Opticom As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Opticom As filed Critical Opticom As
Priority to NO973993A priority Critical patent/NO973993L/no
Publication of NO973993D0 publication Critical patent/NO973993D0/no
Publication of NO973993L publication Critical patent/NO973993L/no
Priority claimed from NO19992123A external-priority patent/NO310899B1/no

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009RRAM elements whose operation depends upon chemical change
    • G11C13/0014RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009RRAM elements whose operation depends upon chemical change
    • G11C13/0014RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor

Abstract

Et leseminne er utført elektrisk adresserbart over en passiv ledermatrise, hvor krysningsstedet mellom lederne i matrisen definerer leseminnets minneceller som realisert som en diodestruktur i en uorganisk eller organisk halvleder, fortrinnsvis med anisotrop ledningsevne. Ved passende anordning av isolatormateriale respektive halvledermateriale i minnecellene gis disse en fast impedansverdi som kan avleses elektrisk og tilsvarer logiske verdier i en binær eller flerverdig kode. I en leseminneinnretning er enten en eller flere leseminner av denne art anordnet på et halvledersubstrat som også omfatter driver- og kontrollkretser fortrinnsvis integrert i halvledersubstratet og utført i kompatibel teknologi. Leseminneinnretningen kan være realisert planart eller også volumetrisk ved å stable flere leseminner lagvis i høyden og forbinde dem til substratet via adresseringsbusser. Slike leseminneinnretninger kan implementere på minnekort med standard kortgrensesnitt og benyttes til lagring av kildeinformasjon.
NO973993A 1997-09-01 1997-09-01 Leseminne og leseminneinnretninger NO973993L (no)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NO973993A NO973993L (no) 1997-09-01 1997-09-01 Leseminne og leseminneinnretninger

Applications Claiming Priority (29)

Application Number Priority Date Filing Date Title
NO973993A NO973993L (no) 1997-09-01 1997-09-01 Leseminne og leseminneinnretninger
CN 98810574 CN1199193C (zh) 1997-09-01 1998-08-28 只读存储器和只读存储器件
US09/297,521 US6380597B1 (en) 1997-09-01 1998-08-28 Read-only memory and read-only memory device
AT98941940T AT213090T (de) 1997-09-01 1998-08-28 Festwertspeicher und festwertspeicheranordnungen
RU2000108482A RU2212716C2 (ru) 1997-09-01 1998-08-28 Постоянная память и постоянное запоминающее устройство
AU90093/98A AU742011B2 (en) 1997-09-01 1998-08-28 A read-only memory and read-only memory devices
AT98939837T AT213089T (de) 1997-09-01 1998-08-28 Festwertspeicher und festwertspeicheranordnung
KR20007002220A KR100368819B1 (ko) 1997-09-01 1998-08-28 판독-전용 메모리 및 판독-전용 메모리 장치
ES98939837T ES2172181T3 (es) 1997-09-01 1998-08-28 Memoria de solo lectura y dispositivo de memoria de solo lectura.
CA 2302015 CA2302015C (en) 1997-09-01 1998-08-28 A read-only memory and read-only memory device
JP2000512213A JP3526550B2 (ja) 1997-09-01 1998-08-28 読出し専用メモリ及び読出し専用メモリ装置
PCT/NO1998/000264 WO1999014763A1 (en) 1997-09-01 1998-08-28 A read-only memory and read-only memory devices
EP19980939837 EP1010180B1 (en) 1997-09-01 1998-08-28 A read-only memory and read-only memory device
EP19980941940 EP1010181B1 (en) 1997-09-01 1998-08-28 A read-only memory and read-only memory devices
DK98939837T DK1010180T3 (da) 1997-09-01 1998-08-28 Læselager og læselagerindretning
US09/297,467 US6236587B1 (en) 1997-09-01 1998-08-28 Read-only memory and read-only memory devices
KR20007002218A KR100368820B1 (ko) 1997-09-01 1998-08-28 판독-전용 메모리 및 판독-전용 메모리 장치
AU88210/98A AU750496B2 (en) 1997-09-01 1998-08-28 A read-only memory and read-only memory device
CN 98810569 CN1199192C (zh) 1997-09-01 1998-08-28 只读存储器和只读存储器件
CA 2302014 CA2302014C (en) 1997-09-01 1998-08-28 A read-only memory and read-only memory devices
DE1998603782 DE69803782T2 (de) 1997-09-01 1998-08-28 Festwertspeicher und festwertspeicheranordnungen
PCT/NO1998/000263 WO1999014762A1 (en) 1997-09-01 1998-08-28 A read-only memory and read-only memory device
RU2000108581A RU2216055C2 (ru) 1997-09-01 1998-08-28 Постоянная память и постоянные запоминающие устройства
DE1998603781 DE69803781T2 (de) 1997-09-01 1998-08-28 Festwertspeicher und festwertspeicheranordnung
ES98941940T ES2172189T3 (es) 1997-09-01 1998-08-28 Memoria de solo lectura y dispositivo de memoria de solo lectura.
JP2000512214A JP3526551B2 (ja) 1997-09-01 1998-08-28 読出し専用メモリ及び読出し専用メモリ装置
DK98941940T DK1010181T3 (da) 1997-09-01 1998-08-28 Læselager og læselagerindretninger
NO19992122A NO310946B1 (no) 1997-09-01 1999-04-30 Leseminne og leseminneinnretninger
NO19992123A NO310899B1 (no) 1997-09-01 1999-04-30 Leseminne og leseminneinnretninger

Publications (2)

Publication Number Publication Date
NO973993D0 NO973993D0 (no) 1997-09-01
NO973993L true NO973993L (no) 1999-03-02

Family

ID=19901057

Family Applications (2)

Application Number Title Priority Date Filing Date
NO973993A NO973993L (no) 1997-09-01 1997-09-01 Leseminne og leseminneinnretninger
NO19992122A NO310946B1 (no) 1997-09-01 1999-04-30 Leseminne og leseminneinnretninger

Family Applications After (1)

Application Number Title Priority Date Filing Date
NO19992122A NO310946B1 (no) 1997-09-01 1999-04-30 Leseminne og leseminneinnretninger

Country Status (14)

Country Link
US (2) US6380597B1 (no)
EP (2) EP1010181B1 (no)
JP (2) JP3526550B2 (no)
KR (2) KR100368819B1 (no)
CN (2) CN1199192C (no)
AT (2) AT213089T (no)
AU (2) AU742011B2 (no)
CA (2) CA2302015C (no)
DE (2) DE69803781T2 (no)
DK (2) DK1010181T3 (no)
ES (2) ES2172189T3 (no)
NO (2) NO973993L (no)
RU (2) RU2212716C2 (no)
WO (2) WO1999014763A1 (no)

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