NO20052904L - Et ikke-flyktig elektrisk minnesystem - Google Patents

Et ikke-flyktig elektrisk minnesystem

Info

Publication number
NO20052904L
NO20052904L NO20052904A NO20052904A NO20052904L NO 20052904 L NO20052904 L NO 20052904L NO 20052904 A NO20052904 A NO 20052904A NO 20052904 A NO20052904 A NO 20052904A NO 20052904 L NO20052904 L NO 20052904L
Authority
NO
Norway
Prior art keywords
memory
unit
read
write
contacts
Prior art date
Application number
NO20052904A
Other languages
English (en)
Other versions
NO20052904D0 (no
Inventor
Per Broms
Christer Karlsson
Geirr I Leistad
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20052904A priority Critical patent/NO20052904L/no
Publication of NO20052904D0 publication Critical patent/NO20052904D0/no
Priority to AT06747668T priority patent/ATE525706T1/de
Priority to NO20062634A priority patent/NO20062634L/no
Priority to RU2008100080/09A priority patent/RU2008100080A/ru
Priority to PCT/NO2006/000214 priority patent/WO2006135245A1/en
Priority to DE602006015808T priority patent/DE602006015808D1/de
Priority to CNA200680021255XA priority patent/CN101198969A/zh
Priority to US11/917,579 priority patent/US7764529B2/en
Priority to JP2008516772A priority patent/JP4782196B2/ja
Priority to PCT/NO2006/000216 priority patent/WO2006135247A1/en
Priority to US11/917,571 priority patent/US8184467B2/en
Priority to RU2008100079/09A priority patent/RU2008100079A/ru
Priority to EP06747666A priority patent/EP1894146B1/en
Priority to JP2008516770A priority patent/JP2008544363A/ja
Priority to EP06747668A priority patent/EP1891583B1/en
Publication of NO20052904L publication Critical patent/NO20052904L/no

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/0013—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers
    • G06K7/0021—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers for reading/sensing record carriers having surface contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G11B9/1454—Positioning the head or record carrier into or out of operative position or across information tracks; Alignment of the head relative to the surface of the record carrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Artificial Intelligence (AREA)
  • Semiconductor Memories (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Storage Device Security (AREA)
  • Read Only Memory (AREA)
  • Debugging And Monitoring (AREA)
NO20052904A 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem NO20052904L (no)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem
EP06747668A EP1891583B1 (en) 2005-06-14 2006-06-08 A data storage device
CNA200680021255XA CN101198969A (zh) 2005-06-14 2006-06-08 数据存储装置
JP2008516772A JP4782196B2 (ja) 2005-06-14 2006-06-08 データ記憶装置
RU2008100080/09A RU2008100080A (ru) 2005-06-14 2006-06-08 Устройство хранения данных
PCT/NO2006/000214 WO2006135245A1 (en) 2005-06-14 2006-06-08 A data storage device
DE602006015808T DE602006015808D1 (de) 2005-06-14 2006-06-08 Datenspeichereinrichtung
AT06747668T ATE525706T1 (de) 2005-06-14 2006-06-08 Datenspeichereinrichtung
US11/917,579 US7764529B2 (en) 2005-06-14 2006-06-08 Data storage device
NO20062634A NO20062634L (no) 2005-06-14 2006-06-08 Datalagringsinnretning
PCT/NO2006/000216 WO2006135247A1 (en) 2005-06-14 2006-06-08 A data storage device
US11/917,571 US8184467B2 (en) 2005-06-14 2006-06-08 Card-like memory unit with separate read/write unit
RU2008100079/09A RU2008100079A (ru) 2005-06-14 2006-06-08 Устройство хранения данных
EP06747666A EP1894146B1 (en) 2005-06-14 2006-06-08 A data storage device
JP2008516770A JP2008544363A (ja) 2005-06-14 2006-06-08 データ記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem

Publications (2)

Publication Number Publication Date
NO20052904D0 NO20052904D0 (no) 2005-06-14
NO20052904L true NO20052904L (no) 2006-12-15

Family

ID=35295086

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem

Country Status (9)

Country Link
US (2) US8184467B2 (no)
EP (2) EP1891583B1 (no)
JP (2) JP2008544363A (no)
CN (1) CN101198969A (no)
AT (1) ATE525706T1 (no)
DE (1) DE602006015808D1 (no)
NO (1) NO20052904L (no)
RU (2) RU2008100080A (no)
WO (2) WO2006135245A1 (no)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
US7961506B2 (en) 2008-02-05 2011-06-14 Micron Technology, Inc. Multiple memory cells with rectifying device
CN103620681B (zh) 2011-06-27 2016-11-02 薄膜电子有限公司 具有横向尺寸改变吸收缓冲层的电子部件及其生产方法
CN106876398B (zh) 2011-06-27 2020-10-20 薄膜电子有限公司 含横向尺寸改变吸收缓冲层的铁电存储单元及其制造方法
US9219225B2 (en) 2013-10-31 2015-12-22 Micron Technology, Inc. Multi-bit ferroelectric memory device and methods of forming the same
JP2016189042A (ja) * 2015-03-30 2016-11-04 株式会社クボタ カード発行機およびカード購入システム
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
US9934415B1 (en) 2017-04-20 2018-04-03 Xerox Corporation Handheld reader having transparent circuit board for alignment of multiple electrical contacts
US10396124B2 (en) 2017-07-05 2019-08-27 Xerox Corporation Memory cells and devices
KR102626791B1 (ko) * 2017-08-28 2024-01-19 에이에스엠엘 네델란즈 비.브이. 미리 결정된 시동 값을 갖는 메모리 디바이스
US10838831B2 (en) * 2018-05-14 2020-11-17 Micron Technology, Inc. Die-scope proximity disturb and defect remapping scheme for non-volatile memory
US11055167B2 (en) * 2018-05-14 2021-07-06 Micron Technology, Inc. Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
US10249625B1 (en) 2018-07-18 2019-04-02 Xerox Corporation Coated printed electronic devices exhibiting improved yield
US10304836B1 (en) 2018-07-18 2019-05-28 Xerox Corporation Protective layers for high-yield printed electronic devices
US10593684B2 (en) 2018-07-18 2020-03-17 Xerox Corporation Printed electronic devices exhibiting improved yield
DE102020108366A1 (de) 2020-03-26 2021-09-30 Bayerische Motoren Werke Aktiengesellschaft Informationsspeicher und Verfahren zum Programmieren und Auslesen von Informationen
US12087397B1 (en) 2020-04-06 2024-09-10 Crossbar, Inc. Dynamic host allocation of physical unclonable feature operation for resistive switching memory
US11450384B2 (en) 2020-04-06 2022-09-20 Crossbar, Inc. Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chip
US11727986B2 (en) * 2020-04-06 2023-08-15 Crossbar, Inc. Physically unclonable function (PUF) generation involving programming of marginal bits
US11823739B2 (en) * 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits

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US3835301A (en) * 1973-02-21 1974-09-10 Helert P Card coding and read-out system
FR2633420B1 (fr) 1988-06-28 1992-02-21 Schlumberger Ind Sa Support d'informations et systeme de gestion de tels supports
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
JP2788290B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ
US5323377A (en) 1992-11-27 1994-06-21 Chen Zhi Q Electrical data recording and retrieval based on impedance variation
US6025618A (en) 1996-11-12 2000-02-15 Chen; Zhi Quan Two-parts ferroelectric RAM
NO972803D0 (no) * 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
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NO973993L (no) * 1997-09-01 1999-03-02 Opticom As Leseminne og leseminneinnretninger
EP1051745B1 (en) * 1998-01-28 2007-11-07 Thin Film Electronics ASA A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
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CA2353496C (en) * 1998-12-04 2007-11-13 Thin Film Electronics Asa Scalable data processing apparatus
JPWO2004017410A1 (ja) * 2002-08-19 2005-12-08 セイコーエプソン株式会社 強誘電体メモリおよびその製造方法
FI20031089A7 (fi) 2003-07-17 2005-01-18 Avantone Oy Kappaleiden tunnistusmenetelmä sekä järjestelmä merkin sisällön selvittämiseksi
US7599278B2 (en) * 2003-08-25 2009-10-06 Samsung Electronics Co., Ltd. Recording medium comprising ferroelectric layer, nonvolatile memory device comprising recording medium, and methods of writing and reading data for the memory device
US7471614B2 (en) * 2003-08-29 2008-12-30 International Business Machines Corporation High density data storage medium
US20050156271A1 (en) * 2004-01-16 2005-07-21 Si-Ty Lam Data storage device
KR100590564B1 (ko) * 2004-10-29 2006-06-19 삼성전자주식회사 이방성 전도층을 구비하는 강유전체 기록 매체, 이를구비하는 기록 장치 및 그 기록 방법
KR100612867B1 (ko) * 2004-11-02 2006-08-14 삼성전자주식회사 탐침 어레이를 가지는 저항성 메모리 소자 및 그 제조 방법
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem

Also Published As

Publication number Publication date
US8184467B2 (en) 2012-05-22
US20080198640A1 (en) 2008-08-21
WO2006135245A1 (en) 2006-12-21
ATE525706T1 (de) 2011-10-15
EP1891583A1 (en) 2008-02-27
US7764529B2 (en) 2010-07-27
DE602006015808D1 (de) 2010-09-09
EP1894146B1 (en) 2010-07-28
JP4782196B2 (ja) 2011-09-28
CN101198969A (zh) 2008-06-11
US20080198644A1 (en) 2008-08-21
RU2008100080A (ru) 2009-07-20
JP2008544364A (ja) 2008-12-04
JP2008544363A (ja) 2008-12-04
EP1894146A4 (en) 2009-11-25
EP1894146A1 (en) 2008-03-05
WO2006135247A1 (en) 2006-12-21
RU2008100079A (ru) 2009-07-20
EP1891583B1 (en) 2011-09-21
NO20052904D0 (no) 2005-06-14

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Legal Events

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FC2A Withdrawal, rejection or dismissal of laid open patent application