WO2009050833A1 - 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 - Google Patents

不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 Download PDF

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Publication number
WO2009050833A1
WO2009050833A1 PCT/JP2008/000827 JP2008000827W WO2009050833A1 WO 2009050833 A1 WO2009050833 A1 WO 2009050833A1 JP 2008000827 W JP2008000827 W JP 2008000827W WO 2009050833 A1 WO2009050833 A1 WO 2009050833A1
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WO
WIPO (PCT)
Prior art keywords
electrode
memory element
volatile memory
volatile
semiconductor device
Prior art date
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PCT/JP2008/000827
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English (en)
French (fr)
Inventor
Yoshihiko Kanzawa
Shunsaku Muraoka
Satoru Mitani
Zhiqiang Wei
Takeshi Takagi
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Panasonic Corporation
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Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to CN2008801118111A priority Critical patent/CN101828262B/zh
Priority to KR1020107008469A priority patent/KR101060793B1/ko
Priority to US12/682,676 priority patent/US8338816B2/en
Priority to EP08720693.4A priority patent/EP2209139B1/en
Priority to JP2009537884A priority patent/JP4545823B2/ja
Publication of WO2009050833A1 publication Critical patent/WO2009050833A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

　本発明の不揮発性記憶素子は、第１電極(503)と、第２電極(505)と、第１電極(503)と第２電極(505)との間に介在され、かつ、第１電極(503)と第２電極(505)の間に接するように構成され、両電極(503),(505)間に与えられる電気的信号に基づいて可逆的に抵抗値が変化する抵抗変化層(504)とを備える不揮発性素子において、前記第１電極と前記第２電極が異なる元素からなる材料によって構成されている。
PCT/JP2008/000827 2007-10-15 2008-03-31 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 WO2009050833A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2008801118111A CN101828262B (zh) 2007-10-15 2008-03-31 非易失性存储元件和使用该非易失性存储元件的非易失性半导体装置
KR1020107008469A KR101060793B1 (ko) 2007-10-15 2008-03-31 비휘발성 기억 소자 및 이 비휘발성 기억 소자를 이용한 비휘발성 반도체 장치
US12/682,676 US8338816B2 (en) 2007-10-15 2008-03-31 Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element
EP08720693.4A EP2209139B1 (en) 2007-10-15 2008-03-31 Non-volatile memory element and non-volatile semiconductor device using the non-volatile memory element
JP2009537884A JP4545823B2 (ja) 2007-10-15 2008-03-31 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-267583 2007-10-15
JP2007267583 2007-10-15

Publications (1)

Publication Number Publication Date
WO2009050833A1 true WO2009050833A1 (ja) 2009-04-23

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PCT/JP2008/000827 WO2009050833A1 (ja) 2007-10-15 2008-03-31 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置

Country Status (6)

Country Link
US (1) US8338816B2 (ja)
EP (1) EP2209139B1 (ja)
JP (2) JP4545823B2 (ja)
KR (1) KR101060793B1 (ja)
CN (1) CN101828262B (ja)
WO (1) WO2009050833A1 (ja)

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WO2009136467A1 (ja) * 2008-05-08 2009-11-12 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置、および不揮発性記憶素子へのデータ書込方法
WO2009147790A1 (ja) * 2008-06-03 2009-12-10 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置、および不揮発性半導体装置
WO2010021134A1 (ja) * 2008-08-20 2010-02-25 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
WO2010109876A1 (ja) * 2009-03-25 2010-09-30 パナソニック株式会社 抵抗変化素子の駆動方法及び不揮発性記憶装置
WO2011007538A1 (ja) * 2009-07-13 2011-01-20 パナソニック株式会社 抵抗変化型素子および抵抗変化型記憶装置
WO2011132423A1 (ja) * 2010-04-21 2011-10-27 パナソニック株式会社 不揮発性記憶装置及びその製造方法
WO2012046454A1 (ja) * 2010-10-08 2012-04-12 パナソニック株式会社 不揮発性記憶素子およびその製造方法
JP2012079367A (ja) * 2010-09-30 2012-04-19 Sharp Corp 不揮発性半導体記憶装置
JP4995360B1 (ja) * 2011-01-20 2012-08-08 パナソニック株式会社 不揮発性ラッチ回路および不揮発性フリップフロップ回路
US8325508B2 (en) 2009-06-08 2012-12-04 Panasonic Corporation Writing method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
US8345465B2 (en) 2008-09-30 2013-01-01 Panasonic Corporation Driving method of variable resistance element, initialization method of variable resistance element, and nonvolatile storage device
US8395925B2 (en) 2009-06-08 2013-03-12 Panasonic Corporation Forming method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
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JP2014211937A (ja) 2013-04-03 2014-11-13 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法および抵抗変化型不揮発性記憶装置
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Cited By (44)

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WO2009136467A1 (ja) * 2008-05-08 2009-11-12 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置、および不揮発性記憶素子へのデータ書込方法
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US8338816B2 (en) 2012-12-25
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