WO2008126366A1 - 抵抗変化型素子、不揮発性スイッチング素子、および抵抗変化型記憶装置 - Google Patents

抵抗変化型素子、不揮発性スイッチング素子、および抵抗変化型記憶装置 Download PDF

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Publication number
WO2008126366A1
WO2008126366A1 PCT/JP2008/000768 JP2008000768W WO2008126366A1 WO 2008126366 A1 WO2008126366 A1 WO 2008126366A1 JP 2008000768 W JP2008000768 W JP 2008000768W WO 2008126366 A1 WO2008126366 A1 WO 2008126366A1
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WO
WIPO (PCT)
Prior art keywords
electrode
variable resistance
memory device
switching element
voltage
Prior art date
Application number
PCT/JP2008/000768
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English (en)
French (fr)
Inventor
Shunsaku Muraoka
Koichi Osano
Satoru Fujii
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/304,075 priority Critical patent/US7948789B2/en
Priority to JP2008535813A priority patent/JP4308884B2/ja
Priority to CN200880000315.9A priority patent/CN101542729B/zh
Publication of WO2008126366A1 publication Critical patent/WO2008126366A1/ja

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

Abstract

第１電極（２）と、第２電極（４）と、第１電極と第２電極との間に配設され第１電極と第２電極とに電気的に接続された抵抗変化層（３）とを備え、抵抗変化層がＴａＯＸ（１．６≦Ｘ≦２．２）を含む材料で構成され、第１電極と第２電極との間に第１の電圧を有する第１電圧パルスを印加することで第１電極と第２電極との間の電気抵抗が低下し、第１電極と第２電極との間に第１の電圧と極性が同じである第２の電圧を有する第２電圧パルスを印加することで第１電極と第２電極との間の電気抵抗が上昇する、抵抗変化型素子とする。
PCT/JP2008/000768 2007-04-09 2008-03-27 抵抗変化型素子、不揮発性スイッチング素子、および抵抗変化型記憶装置 WO2008126366A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/304,075 US7948789B2 (en) 2007-04-09 2008-03-27 Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus
JP2008535813A JP4308884B2 (ja) 2007-04-09 2008-03-27 抵抗変化型記憶装置、不揮発性スイッチング装置
CN200880000315.9A CN101542729B (zh) 2007-04-09 2008-03-27 电阻变化型元件、不挥发性切换元件和电阻变化型存储装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007101506 2007-04-09
JP2007-101506 2007-04-09

Publications (1)

Publication Number Publication Date
WO2008126366A1 true WO2008126366A1 (ja) 2008-10-23

Family

ID=39863526

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000768 WO2008126366A1 (ja) 2007-04-09 2008-03-27 抵抗変化型素子、不揮発性スイッチング素子、および抵抗変化型記憶装置

Country Status (4)

Country Link
US (1) US7948789B2 (ja)
JP (1) JP4308884B2 (ja)
CN (1) CN101542729B (ja)
WO (1) WO2008126366A1 (ja)

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WO2010073897A1 (ja) * 2008-12-26 2010-07-01 日本電気株式会社 抵抗変化素子

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JP5322533B2 (ja) * 2008-08-13 2013-10-23 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
KR20110061912A (ko) * 2009-12-02 2011-06-10 삼성전자주식회사 비휘발성 메모리 셀 및 이를 포함하는 비휘발성 메모리 장치
KR20110074354A (ko) * 2009-12-24 2011-06-30 삼성전자주식회사 메모리소자 및 그 동작방법
CN102244193A (zh) * 2010-05-13 2011-11-16 复旦大学 包含钌掺杂的氧化钽基电阻型存储器及其制备方法
JP4852670B1 (ja) * 2010-05-26 2012-01-11 パナソニック株式会社 不揮発スイッチング装置を駆動する方法
US20140103281A1 (en) * 2011-07-06 2014-04-17 Fudan University Resistive Memory Based on TaOx Containing Ru Doping and Method of Preparing the Same
US9087573B2 (en) 2012-03-13 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method thereof
JP2013201276A (ja) 2012-03-23 2013-10-03 Toshiba Corp 抵抗変化素子及び不揮発性記憶装置
JP6386723B2 (ja) * 2013-12-11 2018-09-05 Koa株式会社 抵抗素子の製造方法
KR102578854B1 (ko) * 2016-12-31 2023-09-19 에스케이하이닉스 주식회사 저항성 메모리 소자 및 이의 제조 방법
US10381561B2 (en) * 2018-01-10 2019-08-13 Internatoinal Business Machines Corporation Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array

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* Cited by examiner, † Cited by third party
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JP5464148B2 (ja) * 2008-12-26 2014-04-09 日本電気株式会社 抵抗変化素子

Also Published As

Publication number Publication date
CN101542729A (zh) 2009-09-23
JP4308884B2 (ja) 2009-08-05
JPWO2008126366A1 (ja) 2010-07-22
US20100232204A1 (en) 2010-09-16
CN101542729B (zh) 2012-05-02
US7948789B2 (en) 2011-05-24

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