ATE472157T1 - Nichtflüchtiger programmierbarer speicher - Google Patents

Nichtflüchtiger programmierbarer speicher

Info

Publication number
ATE472157T1
ATE472157T1 AT04822056T AT04822056T ATE472157T1 AT E472157 T1 ATE472157 T1 AT E472157T1 AT 04822056 T AT04822056 T AT 04822056T AT 04822056 T AT04822056 T AT 04822056T AT E472157 T1 ATE472157 T1 AT E472157T1
Authority
AT
Austria
Prior art keywords
resistance state
memory
programmable memory
volatile programmable
application
Prior art date
Application number
AT04822056T
Other languages
English (en)
Inventor
Christophe Chevallier
Wayne Kinney
Steven Longcor
Darrell Rinerson
John Sanchaez
Philip Swab
Edmond Ward
Original Assignee
Unity Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unity Semiconductor Corp filed Critical Unity Semiconductor Corp
Application granted granted Critical
Publication of ATE472157T1 publication Critical patent/ATE472157T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G11C2013/0066—Verify correct writing whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cell and using the detector output to terminate writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/12—Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation, e.g. trapping, doping
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Stored Programmes (AREA)
AT04822056T 2004-05-03 2004-05-03 Nichtflüchtiger programmierbarer speicher ATE472157T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/013836 WO2005117021A1 (en) 2004-05-03 2004-05-03 Non-volatile programmable memory

Publications (1)

Publication Number Publication Date
ATE472157T1 true ATE472157T1 (de) 2010-07-15

Family

ID=34958065

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04822056T ATE472157T1 (de) 2004-05-03 2004-05-03 Nichtflüchtiger programmierbarer speicher

Country Status (7)

Country Link
EP (2) EP1743340B1 (de)
JP (1) JP2007536680A (de)
KR (1) KR101128246B1 (de)
CN (1) CN1977337A (de)
AT (1) ATE472157T1 (de)
DE (1) DE602004027844D1 (de)
WO (1) WO2005117021A1 (de)

Families Citing this family (54)

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US20060171200A1 (en) 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US7538338B2 (en) 2004-09-03 2009-05-26 Unity Semiconductor Corporation Memory using variable tunnel barrier widths
US7082052B2 (en) 2004-02-06 2006-07-25 Unity Semiconductor Corporation Multi-resistive state element with reactive metal
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
KR100723420B1 (ko) * 2006-02-20 2007-05-30 삼성전자주식회사 비정질 합금 산화층을 포함하는 비휘발성 메모리 소자
JP5252233B2 (ja) * 2006-07-31 2013-07-31 サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニー 極性が反転可能なワード線およびビット線デコーダを組込んだ受動素子メモリアレイのための方法および装置
EP2062263B1 (de) * 2006-07-31 2012-05-02 Sandisk 3D LLC Verfahren und vorrichtung für duale datenabhängige bussysteme zur kopplung von lese/schreib-schaltungen an einen speicher
US7646624B2 (en) 2006-10-31 2010-01-12 Spansion Llc Method of selecting operating characteristics of a resistive memory device
JP4280302B2 (ja) * 2007-06-22 2009-06-17 パナソニック株式会社 抵抗変化型不揮発性記憶装置
EP2045814A1 (de) * 2007-10-03 2009-04-08 STMicroelectronics S.r.l. Verfahren und Vorrichtung zur irreversiblen Programmierung und Auslesung nichtflüchtiger Speicherzellen
JP5175525B2 (ja) * 2007-11-14 2013-04-03 株式会社東芝 不揮発性半導体記憶装置
JP2009135131A (ja) * 2007-11-28 2009-06-18 Toshiba Corp 半導体記憶装置
JP2011044443A (ja) * 2007-12-17 2011-03-03 Panasonic Corp 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
JP2009164480A (ja) * 2008-01-09 2009-07-23 Toshiba Corp 抵抗変化メモリ装置
JP4709868B2 (ja) 2008-03-17 2011-06-29 株式会社東芝 半導体記憶装置
US7981760B2 (en) 2008-05-08 2011-07-19 Panasonic Corporation Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device
JP2009289822A (ja) * 2008-05-27 2009-12-10 Toshiba Corp 抵抗変化メモリ
US7869258B2 (en) 2008-06-27 2011-01-11 Sandisk 3D, Llc Reverse set with current limit for non-volatile storage
JP5085446B2 (ja) * 2008-07-14 2012-11-28 株式会社東芝 三次元メモリデバイス
JP5322533B2 (ja) * 2008-08-13 2013-10-23 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
JP2010044827A (ja) 2008-08-13 2010-02-25 Toshiba Corp 不揮発性半導体記憶装置
KR20100038986A (ko) * 2008-10-07 2010-04-15 삼성전자주식회사 산화물 박막 트랜지스터를 포함하는 적층 메모리 장치
KR20100040580A (ko) * 2008-10-10 2010-04-20 성균관대학교산학협력단 적층 메모리 소자
JP5178448B2 (ja) * 2008-10-17 2013-04-10 株式会社東芝 不揮発性半導体記憶装置
JP4653833B2 (ja) * 2008-11-04 2011-03-16 シャープ株式会社 不揮発性半導体記憶装置及びその制御方法
JP5178472B2 (ja) * 2008-11-20 2013-04-10 株式会社東芝 半導体記憶装置
WO2010095296A1 (ja) * 2009-02-20 2010-08-26 株式会社村田製作所 抵抗記憶素子およびその使用方法
WO2010095295A1 (ja) * 2009-02-20 2010-08-26 株式会社村田製作所 抵抗記憶素子およびその使用方法
US8270199B2 (en) * 2009-04-03 2012-09-18 Sandisk 3D Llc Cross point non-volatile memory cell
JP2010263211A (ja) * 2009-05-04 2010-11-18 Samsung Electronics Co Ltd 積層メモリ素子
US8227783B2 (en) * 2009-07-13 2012-07-24 Seagate Technology Llc Non-volatile resistive sense memory with praseodymium calcium manganese oxide
US8593858B2 (en) * 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2012029638A1 (en) * 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5680927B2 (ja) * 2010-10-01 2015-03-04 シャープ株式会社 可変抵抗素子、及び、不揮発性半導体記憶装置
JP5690635B2 (ja) * 2011-04-06 2015-03-25 国立大学法人鳥取大学 不揮発性半導体記憶装置および同装置の製造方法
JP5250722B1 (ja) 2011-09-09 2013-07-31 パナソニック株式会社 クロスポイント型抵抗変化不揮発性記憶装置及びその書き込み方法
WO2013076935A1 (ja) * 2011-11-22 2013-05-30 パナソニック株式会社 抵抗変化型不揮発性記憶装置、および抵抗変化型不揮発性記憶装置のアクセス方法
US8891277B2 (en) 2011-12-07 2014-11-18 Kabushiki Kaisha Toshiba Memory device
US8878152B2 (en) * 2012-02-29 2014-11-04 Intermolecular, Inc. Nonvolatile resistive memory element with an integrated oxygen isolation structure
KR102043734B1 (ko) * 2013-04-23 2019-11-12 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법, 이 반도체 장치를 포함하는 마이크로 프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템
KR102142590B1 (ko) 2014-06-16 2020-08-07 삼성전자 주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
CN105470275B (zh) * 2015-10-30 2019-11-08 上海磁宇信息科技有限公司 交叉矩阵列式磁性随机存储器制造工艺
US10134470B2 (en) 2015-11-04 2018-11-20 Micron Technology, Inc. Apparatuses and methods including memory and operation of same
CN105428527B (zh) * 2015-12-15 2016-09-21 中国人民解放军国防科学技术大学 一种基于非晶态LaMnO3薄膜的阻变存储器及其制备方法
US10446226B2 (en) 2016-08-08 2019-10-15 Micron Technology, Inc. Apparatuses including multi-level memory cells and methods of operation of same
US9899083B1 (en) * 2016-11-01 2018-02-20 Arm Ltd. Method, system and device for non-volatile memory device operation with low power high speed and high density
WO2018092148A1 (en) * 2016-11-15 2018-05-24 Indian Institute Of Technology Delhi Image sensor
US9792958B1 (en) 2017-02-16 2017-10-17 Micron Technology, Inc. Active boundary quilt architecture memory
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KR102403733B1 (ko) 2017-12-01 2022-05-30 삼성전자주식회사 메모리 소자
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US20220069211A1 (en) * 2020-09-03 2022-03-03 Macronix International Co., Ltd. Small line or pillar structure and process
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JP4282314B2 (ja) * 2002-06-25 2009-06-17 シャープ株式会社 記憶装置

Also Published As

Publication number Publication date
WO2005117021A1 (en) 2005-12-08
EP1743340A1 (de) 2007-01-17
CN1977337A (zh) 2007-06-06
EP2204813A1 (de) 2010-07-07
EP1743340B1 (de) 2010-06-23
JP2007536680A (ja) 2007-12-13
DE602004027844D1 (de) 2010-08-05
KR20070010165A (ko) 2007-01-22
EP2204813B1 (de) 2012-09-19
KR101128246B1 (ko) 2012-04-12

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