WO2008146461A1 - 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 - Google Patents

不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 Download PDF

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Publication number
WO2008146461A1
WO2008146461A1 PCT/JP2008/001230 JP2008001230W WO2008146461A1 WO 2008146461 A1 WO2008146461 A1 WO 2008146461A1 JP 2008001230 W JP2008001230 W JP 2008001230W WO 2008146461 A1 WO2008146461 A1 WO 2008146461A1
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WO
WIPO (PCT)
Prior art keywords
storage device
nonvolatile storage
nonvolatile
manufacturing
same
Prior art date
Application number
PCT/JP2008/001230
Other languages
English (en)
French (fr)
Inventor
Satoru Fujii
Yoshihiko Kanzawa
Takeshi Takagi
Kazuhiko Shimakawa
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2008545107A priority Critical patent/JP4299882B2/ja
Priority to US12/600,793 priority patent/US8148711B2/en
Publication of WO2008146461A1 publication Critical patent/WO2008146461A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides

Abstract

　本発明の不揮発性半導体装置は、(103)と、第２電極(105)と、第1電極(103)と第２電極(105)との間に介在し、両電極(103),(105)間に与えられる電気的信号に基づいて可逆的に抵抗値が変化する抵抗変化層(104)とを備え、この抵抗変化層(104)はタンタルと窒素とを含む酸化物を含む。
PCT/JP2008/001230 2007-05-18 2008-05-16 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 WO2008146461A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008545107A JP4299882B2 (ja) 2007-05-18 2008-05-16 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
US12/600,793 US8148711B2 (en) 2007-05-18 2008-05-16 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-132893 2007-05-18
JP2007132893 2007-05-18

Publications (1)

Publication Number Publication Date
WO2008146461A1 true WO2008146461A1 (ja) 2008-12-04

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PCT/JP2008/001230 WO2008146461A1 (ja) 2007-05-18 2008-05-16 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置

Country Status (3)

Country Link
US (1) US8148711B2 (ja)
JP (1) JP4299882B2 (ja)
WO (1) WO2008146461A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157479A1 (ja) * 2008-06-26 2009-12-30 日本電気株式会社 スイッチング素子およびスイッチング素子の製造方法
US9000506B2 (en) 2010-11-19 2015-04-07 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory element and method for manufacturing the same

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8158967B2 (en) * 2009-11-23 2012-04-17 Micron Technology, Inc. Integrated memory arrays
WO2012023269A1 (ja) * 2010-08-17 2012-02-23 パナソニック株式会社 不揮発性記憶装置およびその製造方法
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US8885387B2 (en) * 2011-12-02 2014-11-11 Panasonic Corporation Cross point variable resistance nonvolatile memory device
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
US8891277B2 (en) 2011-12-07 2014-11-18 Kabushiki Kaisha Toshiba Memory device
US8698119B2 (en) * 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US10186658B2 (en) * 2012-12-26 2019-01-22 Sony Semiconductor Solutions Corporation Memory device and method of manufacturing memory device
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same

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JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP2005159325A (ja) * 2003-11-24 2005-06-16 Samsung Electronics Co Ltd 相変化記憶素子およびその形成方法
WO2007046144A1 (ja) * 2005-10-19 2007-04-26 Fujitsu Limited 抵抗記憶素子及びその製造方法、並びに不揮発性半導体記憶装置

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JP2964964B2 (ja) 1989-03-23 1999-10-18 セイコーエプソン株式会社 液晶表示装置の製造方法
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JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP2005159325A (ja) * 2003-11-24 2005-06-16 Samsung Electronics Co Ltd 相変化記憶素子およびその形成方法
WO2007046144A1 (ja) * 2005-10-19 2007-04-26 Fujitsu Limited 抵抗記憶素子及びその製造方法、並びに不揮発性半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157479A1 (ja) * 2008-06-26 2009-12-30 日本電気株式会社 スイッチング素子およびスイッチング素子の製造方法
US9000506B2 (en) 2010-11-19 2015-04-07 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory element and method for manufacturing the same

Also Published As

Publication number Publication date
US20100148143A1 (en) 2010-06-17
JP4299882B2 (ja) 2009-07-22
JPWO2008146461A1 (ja) 2010-08-19
US8148711B2 (en) 2012-04-03

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