WO2009069252A1 - 不揮発性記憶装置およびその製造方法 - Google Patents

不揮発性記憶装置およびその製造方法 Download PDF

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Publication number
WO2009069252A1
WO2009069252A1 PCT/JP2008/003214 JP2008003214W WO2009069252A1 WO 2009069252 A1 WO2009069252 A1 WO 2009069252A1 JP 2008003214 W JP2008003214 W JP 2008003214W WO 2009069252 A1 WO2009069252 A1 WO 2009069252A1
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WO
WIPO (PCT)
Prior art keywords
storage device
wiring
diode element
nonvolatile storage
manufacturing
Prior art date
Application number
PCT/JP2008/003214
Other languages
English (en)
French (fr)
Inventor
Takumi Mikawa
Kenji Tominaga
Kazuhiko Shimakawa
Ryotaro Azuma
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/745,190 priority Critical patent/US8384061B2/en
Priority to CN200880118388.8A priority patent/CN101878529B/zh
Priority to JP2009543647A priority patent/JP4611443B2/ja
Priority to EP08855256A priority patent/EP2219221A4/en
Publication of WO2009069252A1 publication Critical patent/WO2009069252A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　本発明の不揮発性記憶装置は、基板（１）と、第１の配線（３）と、第１のスルーホール（４）に埋め込み形成された第１の抵抗変化素子（５）と第１のダイオード素子の下部電極（６）と、第１の配線３と直交しかつ第１のダイオード素子の半導体層（７）、導電層（８）、第２のダイオード素子の半導体層（１０）をこの順に積層された複数層からなる第２の配線（１１）と、第２のスルーホール（１３）に埋め込み形成された第２の抵抗変化素子（１６）と第２のダイオード素子の上部電極（１４）と、第３の配線（１７）とを備え、第２の配線（１１）の導電層（８）は第１のダイオード素子（９）の上部電極と第２のダイオード素子（１５）の下部電極の役割をも果たすことを特徴とするである。
PCT/JP2008/003214 2007-11-29 2008-11-06 不揮発性記憶装置およびその製造方法 WO2009069252A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/745,190 US8384061B2 (en) 2007-11-29 2008-11-06 Nonvolatile memory device and manufacturing method
CN200880118388.8A CN101878529B (zh) 2007-11-29 2008-11-06 非易失性存储装置及其制造方法
JP2009543647A JP4611443B2 (ja) 2007-11-29 2008-11-06 不揮発性記憶装置およびその製造方法
EP08855256A EP2219221A4 (en) 2007-11-29 2008-11-06 NON-VOLATILE MEMORY ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-308469 2007-11-29
JP2007308469 2007-11-29

Publications (1)

Publication Number Publication Date
WO2009069252A1 true WO2009069252A1 (ja) 2009-06-04

Family

ID=40678167

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003214 WO2009069252A1 (ja) 2007-11-29 2008-11-06 不揮発性記憶装置およびその製造方法

Country Status (6)

Country Link
US (1) US8384061B2 (ja)
EP (1) EP2219221A4 (ja)
JP (1) JP4611443B2 (ja)
KR (1) KR101067051B1 (ja)
CN (1) CN101878529B (ja)
WO (1) WO2009069252A1 (ja)

Cited By (4)

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JP2011187533A (ja) * 2010-03-05 2011-09-22 Toshiba Corp 半導体記憶装置及びその製造方法
US20120091422A1 (en) * 2010-10-14 2012-04-19 Samsung Electronics Co., Ltd. Semiconductor Memory Devices Having Variable Resistor And Methods Of Fabricating The Same
KR101422421B1 (ko) * 2010-06-28 2014-07-22 마이크론 테크놀로지, 인크. 높은 전력 충격 마그네트론 스퍼터링을 사용하여 메모리를 형성하는 방법 및 시스템
JP2020141087A (ja) * 2019-03-01 2020-09-03 Tdk株式会社 抵抗変化素子及びその製造方法

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JP5502339B2 (ja) * 2009-02-17 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
TWI433302B (zh) * 2009-03-03 2014-04-01 Macronix Int Co Ltd 積體電路自對準三度空間記憶陣列及其製作方法
US20120241710A1 (en) 2011-03-21 2012-09-27 Nanyang Technological University Fabrication of RRAM Cell Using CMOS Compatible Processes
JP5646758B2 (ja) * 2011-08-11 2014-12-24 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置及び配線形成用治具
TWI503949B (zh) * 2011-11-18 2015-10-11 Chrongjung Lin 可變且可逆之電阻式記憶儲存單元及記憶儲存模組
US9276041B2 (en) * 2012-03-19 2016-03-01 Globalfoundries Singapore Pte Ltd Three dimensional RRAM device, and methods of making same
US9029829B1 (en) * 2012-05-02 2015-05-12 Adesto Technologies Corporation Resistive switching memories
JP5814867B2 (ja) 2012-06-27 2015-11-17 株式会社東芝 半導体記憶装置
JP2014082279A (ja) * 2012-10-15 2014-05-08 Panasonic Corp 不揮発性記憶装置及びその製造方法
US9257484B2 (en) * 2013-01-30 2016-02-09 Kabushiki Kaisha Toshiba Non-volatile memory device and method of manufacturing the same
KR102155761B1 (ko) * 2014-01-02 2020-09-14 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
FR3050739B1 (fr) * 2016-05-02 2018-06-01 Stmicroelectronics (Rousset) Sas Procede de fabrication de cellules-memoires resistives
JP6829125B2 (ja) * 2017-03-23 2021-02-10 キオクシア株式会社 半導体記憶装置
JP2019054206A (ja) 2017-09-19 2019-04-04 東芝メモリ株式会社 記憶装置
KR102682821B1 (ko) * 2019-01-25 2024-07-08 삼성전자주식회사 가변 저항 메모리 장치
KR102706732B1 (ko) * 2019-04-08 2024-09-19 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US11694957B2 (en) * 2019-05-15 2023-07-04 Tokyo Electron Limited Programmable connection segment and method of forming the same
KR102668222B1 (ko) * 2019-05-22 2024-05-24 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
EP3823042A1 (en) 2019-11-12 2021-05-19 Imec VZW Bipolar selector device for a memory array
CN115298826A (zh) * 2020-04-29 2022-11-04 华为技术有限公司 三维铁电存储器及电子设备

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KR101422421B1 (ko) * 2010-06-28 2014-07-22 마이크론 테크놀로지, 인크. 높은 전력 충격 마그네트론 스퍼터링을 사용하여 메모리를 형성하는 방법 및 시스템
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Also Published As

Publication number Publication date
EP2219221A1 (en) 2010-08-18
KR20100084174A (ko) 2010-07-23
US20100258779A1 (en) 2010-10-14
JP4611443B2 (ja) 2011-01-12
US8384061B2 (en) 2013-02-26
EP2219221A4 (en) 2013-03-13
CN101878529B (zh) 2012-07-04
CN101878529A (zh) 2010-11-03
KR101067051B1 (ko) 2011-09-22
JPWO2009069252A1 (ja) 2011-04-07

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