ATE517441T1 - Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten - Google Patents

Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten

Info

Publication number
ATE517441T1
ATE517441T1 AT07753788T AT07753788T ATE517441T1 AT E517441 T1 ATE517441 T1 AT E517441T1 AT 07753788 T AT07753788 T AT 07753788T AT 07753788 T AT07753788 T AT 07753788T AT E517441 T1 ATE517441 T1 AT E517441T1
Authority
AT
Austria
Prior art keywords
phase change
phase
self
material layers
electrode
Prior art date
Application number
AT07753788T
Other languages
English (en)
Inventor
Jun Liu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE517441T1 publication Critical patent/ATE517441T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/068—Patterning of the switching material by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
AT07753788T 2006-04-04 2007-03-23 Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten ATE517441T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/396,616 US7812334B2 (en) 2006-04-04 2006-04-04 Phase change memory elements using self-aligned phase change material layers and methods of making and using same
PCT/US2007/007188 WO2007126690A2 (en) 2006-04-04 2007-03-23 Phase change memory elements using self- aligned phase change material layers and methods of making and using same

Publications (1)

Publication Number Publication Date
ATE517441T1 true ATE517441T1 (de) 2011-08-15

Family

ID=38565769

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07753788T ATE517441T1 (de) 2006-04-04 2007-03-23 Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten

Country Status (7)

Country Link
US (4) US7812334B2 (de)
EP (2) EP2005495B1 (de)
JP (1) JP5360496B2 (de)
KR (1) KR101067969B1 (de)
CN (1) CN101416326B (de)
AT (1) ATE517441T1 (de)
WO (1) WO2007126690A2 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762894B1 (ko) * 2006-04-14 2007-10-08 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
WO2007133837A2 (en) 2006-05-12 2007-11-22 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
US7638357B2 (en) 2006-08-25 2009-12-29 Micron Technology, Inc. Programmable resistance memory devices and systems using the same and methods of forming the same
US7479671B2 (en) * 2006-08-29 2009-01-20 International Business Machines Corporation Thin film phase change memory cell formed on silicon-on-insulator substrate
US7560723B2 (en) * 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
JP2008103541A (ja) * 2006-10-19 2008-05-01 Renesas Technology Corp 相変化メモリおよびその製造方法
EP2511280A1 (de) 2006-11-02 2012-10-17 Advanced Technology Materials, Inc. Germanium-Amidinat-Komplexe zur chemischen Gasphasenabscheidung (CVD)/Atomlagenabscheidung (ALD) von Metalldünnschichten
US20080164453A1 (en) * 2007-01-07 2008-07-10 Breitwisch Matthew J Uniform critical dimension size pore for pcram application
TWI347670B (en) * 2007-02-01 2011-08-21 Promos Technologies Inc Phase-change memory and fabrication method thereof
US20080270811A1 (en) * 2007-04-26 2008-10-30 Super Talent Electronics Inc. Fast Suspend-Resume of Computer Motherboard Using Phase-Change Memory
US7961506B2 (en) 2008-02-05 2011-06-14 Micron Technology, Inc. Multiple memory cells with rectifying device
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
KR20100043470A (ko) * 2008-10-20 2010-04-29 주식회사 하이닉스반도체 상변화 메모리 소자의 하부 전극 콘택 구조 및 그 제조 방법
KR20100076274A (ko) * 2008-12-26 2010-07-06 주식회사 하이닉스반도체 상변화 메모리 소자 및 그 제조방법
WO2011002705A2 (en) 2009-07-02 2011-01-06 Advanced Technology Materials, Inc. Hollow gst structure with dielectric fill
US8198124B2 (en) * 2010-01-05 2012-06-12 Micron Technology, Inc. Methods of self-aligned growth of chalcogenide memory access device
KR101706809B1 (ko) 2010-03-26 2017-02-15 엔테그리스, 아이엔씨. 게르마늄 안티몬 텔루라이드 물질 및 이를 포함하는 장치
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US8097537B2 (en) * 2010-05-25 2012-01-17 Micron Technology, Inc. Phase change memory cell structures and methods
JP5380481B2 (ja) * 2011-03-07 2014-01-08 株式会社東芝 記憶装置およびその製造方法
KR102117124B1 (ko) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
GB2515567A (en) * 2013-06-28 2014-12-31 Ibm Phase-Change memory cells
GB2515568B (en) 2013-06-28 2016-05-18 Ibm Resistive random-access memory cells
US9564585B1 (en) * 2015-09-03 2017-02-07 HGST Netherlands B.V. Multi-level phase change device
US9570169B1 (en) 2016-06-03 2017-02-14 International Business Machines Corporation Resistive memory device
US11158794B2 (en) 2018-08-14 2021-10-26 Newport Fab, Llc High-yield tunable radio frequency (RF) filter with auxiliary capacitors and non-volatile RF switches
US11196401B2 (en) 2018-08-14 2021-12-07 Newport Fab, Llc Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches
US10944052B2 (en) 2018-08-14 2021-03-09 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer
US10862477B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US11031689B2 (en) 2018-08-14 2021-06-08 Newport Fab, Llc Method for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US10937960B2 (en) 2018-08-14 2021-03-02 Newport Fab, Llc Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
US10978639B2 (en) 2018-08-14 2021-04-13 Newport Fab, Llc Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches
US11031555B2 (en) 2018-08-14 2021-06-08 Newport Fab, Llc Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits
US10770389B2 (en) 2018-08-14 2020-09-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals
US11050022B2 (en) * 2018-08-14 2021-06-29 Newport Fab, Llc Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance
US10615338B2 (en) 2018-08-14 2020-04-07 Newport Fab, Llc Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches
US10862032B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch
US10916540B2 (en) 2018-08-14 2021-02-09 Newport Fab, Llc Device including PCM RF switch integrated with group III-V semiconductors
US10833267B2 (en) 2018-10-26 2020-11-10 International Business Machines Corporation Structure and method to form phase change memory cell with self- align top electrode contact

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7023009B2 (en) * 1997-10-01 2006-04-04 Ovonyx, Inc. Electrically programmable memory element with improved contacts
US6635914B2 (en) * 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
US6563156B2 (en) * 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6764894B2 (en) * 2001-08-31 2004-07-20 Ovonyx, Inc. Elevated pore phase-change memory
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6580144B2 (en) * 2001-09-28 2003-06-17 Hewlett-Packard Development Company, L.P. One time programmable fuse/anti-fuse combination based memory cell
US6992365B2 (en) * 2001-10-12 2006-01-31 Ovonyx, Inc. Reducing leakage currents in memories with phase-change material
KR100437458B1 (ko) * 2002-05-07 2004-06-23 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
KR100481866B1 (ko) * 2002-11-01 2005-04-11 삼성전자주식회사 상변환 기억소자 및 그 제조방법
US6869883B2 (en) * 2002-12-13 2005-03-22 Ovonyx, Inc. Forming phase change memories
EP1576670B1 (de) * 2002-12-19 2007-02-21 Koninklijke Philips Electronics N.V. Elektrische vorrichtung mit phasenwechselmaterial und parallelheizung
US7029978B2 (en) * 2003-08-04 2006-04-18 Intel Corporation Controlling the location of conduction breakdown in phase change memories
KR100568109B1 (ko) * 2003-11-24 2006-04-05 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
DE102004011430B4 (de) * 2004-03-09 2008-06-19 Qimonda Ag Halbleiterspeichereinrichtung
US7009694B2 (en) * 2004-05-28 2006-03-07 International Business Machines Corporation Indirect switching and sensing of phase change memory cells
KR100639206B1 (ko) * 2004-06-30 2006-10-30 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
US20060108667A1 (en) * 2004-11-22 2006-05-25 Macronix International Co., Ltd. Method for manufacturing a small pin on integrated circuits or other devices
EP1677372B1 (de) 2004-12-30 2008-05-14 STMicroelectronics S.r.l. Phasenwechselspeicher und Herstellungsmethode dafür
US7348590B2 (en) * 2005-02-10 2008-03-25 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
US7214958B2 (en) * 2005-02-10 2007-05-08 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
KR100657956B1 (ko) * 2005-04-06 2006-12-14 삼성전자주식회사 다치 저항체 메모리 소자와 그 제조 및 동작 방법
JP4560818B2 (ja) * 2005-07-22 2010-10-13 エルピーダメモリ株式会社 半導体装置及びその製造方法
CN100379047C (zh) * 2005-07-28 2008-04-02 复旦大学 一种纳米相变存储器单元的制备方法
US7332735B2 (en) * 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7251154B2 (en) * 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7589364B2 (en) * 2005-11-02 2009-09-15 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
US7560723B2 (en) * 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US7504653B2 (en) * 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US7888155B2 (en) * 2009-03-16 2011-02-15 Industrial Technology Research Institute Phase-change memory element and method for fabricating the same

Also Published As

Publication number Publication date
JP5360496B2 (ja) 2013-12-04
US20090166605A1 (en) 2009-07-02
EP2005495B1 (de) 2011-07-20
JP2009532898A (ja) 2009-09-10
EP2325911A3 (de) 2011-07-06
US7812334B2 (en) 2010-10-12
WO2007126690A3 (en) 2007-12-21
KR20090005131A (ko) 2009-01-12
KR101067969B1 (ko) 2011-09-26
CN101416326A (zh) 2009-04-22
EP2005495A2 (de) 2008-12-24
US20110227029A1 (en) 2011-09-22
WO2007126690A2 (en) 2007-11-08
EP2325911A2 (de) 2011-05-25
US7968862B2 (en) 2011-06-28
CN101416326B (zh) 2011-08-17
US20070246766A1 (en) 2007-10-25
EP2325911B1 (de) 2015-08-19
US8674334B2 (en) 2014-03-18
US20130248810A1 (en) 2013-09-26

Similar Documents

Publication Publication Date Title
ATE517441T1 (de) Phasenwechselspeicherelemente mit selbstausgerichteten phasenspeichermaterialschichten
TW200735281A (en) Phase change memory devices and their methods of fabrication
TW200737502A (en) Phase-change memory device and methods of fabricating the same
ATE490555T1 (de) Elektrisch programmierbare schmelzverbindung
TW200701453A (en) Manufacturing methods for thin film fuse phase change ram
TW200733352A (en) Phase change memory device and method of forming the same
TW200731850A (en) Organic light-emitting transistor element and method for manufacturing the same
WO2006011632A3 (en) Semiconductor device including a conductive layer buried in an opening and method of manufacturing the same
TWI268573B (en) Semiconductor device and method for fabricating the same
TW200705616A (en) Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
WO2009057262A1 (ja) 不揮発性半導体記憶装置およびその製造方法
TW200625532A (en) Semiconductor device having mim element
WO2009069252A1 (ja) 不揮発性記憶装置およびその製造方法
TW200737498A (en) Method of manufacturing non-volatile memory element
TW200735331A (en) Electrically rewritable non-volatile memory element and method of manufacturing the same
WO2009075073A1 (ja) 不揮発性記憶装置およびその製造方法
TW200731512A (en) Phase changeable memory cell array region and method of forming the same
TW200725613A (en) Semiconductor memory device, phase change memory device and method of manufcturing the same
TW200737550A (en) Semiconductor device and its manufacturing method, and display device and electronic appliance
WO2005034201A3 (en) Metal-insulator-metal capacitor and method of fabrication
TW200741961A (en) Semiconductor devices and fabrication method thereof
TW201130057A (en) Semiconductor device and manufacturing method thereof
TW200709415A (en) Gate pattern of semiconductor device and method for fabricating the same
ATE547814T1 (de) Phasenänderungsstromdichte-steuerstruktur
TW200627590A (en) A semiconductor device and method of fabricating the same, and a memory device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties