WO2009057262A1 - 不揮発性半導体記憶装置およびその製造方法 - Google Patents

不揮発性半導体記憶装置およびその製造方法 Download PDF

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Publication number
WO2009057262A1
WO2009057262A1 PCT/JP2008/002992 JP2008002992W WO2009057262A1 WO 2009057262 A1 WO2009057262 A1 WO 2009057262A1 JP 2008002992 W JP2008002992 W JP 2008002992W WO 2009057262 A1 WO2009057262 A1 WO 2009057262A1
Authority
WO
WIPO (PCT)
Prior art keywords
wiring
storage device
nonvolatile semiconductor
semiconductor storage
manufacturing
Prior art date
Application number
PCT/JP2008/002992
Other languages
English (en)
French (fr)
Inventor
Takumi Mikawa
Yoshio Kawashima
Ryoko Miyanaga
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to CN2008801142939A priority Critical patent/CN101842897B/zh
Priority to US12/738,778 priority patent/US8253136B2/en
Priority to JP2009538914A priority patent/JP5284270B2/ja
Publication of WO2009057262A1 publication Critical patent/WO2009057262A1/ja
Priority to US13/485,203 priority patent/US8389990B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only

Abstract

　本発明の不揮発性半導体記憶装置は、基板(1)と、第１の配線(2)と、抵抗変化素子(5)とダイオード素子(6)の一部からなるメモリセルと、第１の配線(2)と直交しダイオード素子(6)の残りを含有する第２の配線(11)と、層間絶縁層(12)を介して形成された上層配線(13)を有する不揮発性半導体記憶装置において、第１の配線(2)は上層配線(13)と第１のコンタクト(14)で接続され、第２の配線(11)は上層配線(13)と第２のコンタクト(15)で接続されていることを特徴とする。
PCT/JP2008/002992 2007-10-30 2008-10-22 不揮発性半導体記憶装置およびその製造方法 WO2009057262A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008801142939A CN101842897B (zh) 2007-10-30 2008-10-22 非易失性半导体存储装置和其制造方法
US12/738,778 US8253136B2 (en) 2007-10-30 2008-10-22 Nonvolatile semiconductor memory device and manufacturing method thereof
JP2009538914A JP5284270B2 (ja) 2007-10-30 2008-10-22 不揮発性半導体記憶装置およびその製造方法
US13/485,203 US8389990B2 (en) 2007-10-30 2012-05-31 Nonvolatile semiconductor memory device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007281181 2007-10-30
JP2007-281181 2007-10-30

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/738,778 A-371-Of-International US8253136B2 (en) 2007-10-30 2008-10-22 Nonvolatile semiconductor memory device and manufacturing method thereof
US13/485,203 Division US8389990B2 (en) 2007-10-30 2012-05-31 Nonvolatile semiconductor memory device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
WO2009057262A1 true WO2009057262A1 (ja) 2009-05-07

Family

ID=40590669

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002992 WO2009057262A1 (ja) 2007-10-30 2008-10-22 不揮発性半導体記憶装置およびその製造方法

Country Status (4)

Country Link
US (2) US8253136B2 (ja)
JP (1) JP5284270B2 (ja)
CN (1) CN101842897B (ja)
WO (1) WO2009057262A1 (ja)

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JP2013058691A (ja) * 2011-09-09 2013-03-28 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法
US8450182B2 (en) 2010-01-25 2013-05-28 Panasonic Corporation Method of manufacturing non-volatile semiconductor memory element and method of manufacturing non-volatile semiconductor memory device
JP2015517221A (ja) * 2012-04-19 2015-06-18 カーネギー−メロン ユニバーシティＣａｒｎｅｇｉｅ−Ｍｅｌｌｏｎ Ｕｎｉｖｅｒｓｉｔｙ 金属−半導体−金属（ｍｓｍ）ヘテロジャンクションダイオード

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US8017514B2 (en) * 2008-05-05 2011-09-13 International Business Machines Corporation Optically transparent wires for secure circuits and methods of making same
JP2011066347A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 半導体記憶装置
CN102709469A (zh) * 2011-03-28 2012-10-03 中芯国际集成电路制造(上海)有限公司 相变存储器的形成方法
KR20130071006A (ko) * 2011-12-20 2013-06-28 삼성전자주식회사 가변 저항 메모리 장치 및 그 형성 방법
CN103377899A (zh) * 2012-04-25 2013-10-30 中芯国际集成电路制造(上海)有限公司 金属栅极制造方法和cmos制造方法
WO2014039550A1 (en) 2012-09-04 2014-03-13 Carnegie Mellon University A hot-electron transistor having metal terminals
JP2014082279A (ja) * 2012-10-15 2014-05-08 Panasonic Corp 不揮発性記憶装置及びその製造方法
TWI500135B (zh) * 2012-12-10 2015-09-11 Ind Tech Res Inst 堆疊式功率元件模組
CN103296051A (zh) * 2013-05-30 2013-09-11 清华大学 具有肖特基势垒结构的阻变存储单元及其形成方法
US9112148B2 (en) 2013-09-30 2015-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with laterally offset BEVA/TEVA
US9276057B2 (en) * 2014-01-27 2016-03-01 United Microelectronics Corp. Capacitor structure and method of manufacturing the same
US9178144B1 (en) 2014-04-14 2015-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
US9209392B1 (en) 2014-10-14 2015-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
KR102468257B1 (ko) * 2016-08-08 2022-11-18 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US20180138292A1 (en) * 2016-11-11 2018-05-17 Sandisk Technologies Llc Methods and apparatus for three-dimensional nonvolatile memory
JP2019114698A (ja) 2017-12-25 2019-07-11 東芝メモリ株式会社 半導体記憶装置及びその製造方法

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JP2005217402A (ja) * 2004-01-27 2005-08-11 Hewlett-Packard Development Co Lp 自動位置合わせされた整流素子を用いるナノメートルスケールのメモリデバイスおよびその作成方法
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JP2005522045A (ja) * 2002-04-04 2005-07-21 株式会社東芝 相変化メモリ装置
JP2005217402A (ja) * 2004-01-27 2005-08-11 Hewlett-Packard Development Co Lp 自動位置合わせされた整流素子を用いるナノメートルスケールのメモリデバイスおよびその作成方法
JP2007184086A (ja) * 2006-01-04 2007-07-19 Samsung Electronics Co Ltd 相変化メモリ装置
JP2007281208A (ja) * 2006-04-07 2007-10-25 Matsushita Electric Ind Co Ltd 多層抵抗変化素子アレイ、抵抗変化装置、多層不揮発性記憶素子アレイ、及び不揮発性記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8450182B2 (en) 2010-01-25 2013-05-28 Panasonic Corporation Method of manufacturing non-volatile semiconductor memory element and method of manufacturing non-volatile semiconductor memory device
JP2013058691A (ja) * 2011-09-09 2013-03-28 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法
JP2015517221A (ja) * 2012-04-19 2015-06-18 カーネギー−メロン ユニバーシティＣａｒｎｅｇｉｅ−Ｍｅｌｌｏｎ Ｕｎｉｖｅｒｓｉｔｙ 金属−半導体−金属（ｍｓｍ）ヘテロジャンクションダイオード

Also Published As

Publication number Publication date
US20100237313A1 (en) 2010-09-23
JPWO2009057262A1 (ja) 2011-03-10
US20120298945A1 (en) 2012-11-29
US8253136B2 (en) 2012-08-28
JP5284270B2 (ja) 2013-09-11
CN101842897B (zh) 2011-11-02
CN101842897A (zh) 2010-09-22
US8389990B2 (en) 2013-03-05

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