KR100697282B1 - 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열 - Google Patents
저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열 Download PDFInfo
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- H10N70/20—Multistable switching devices, e.g. memristors
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
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- H10B—ELECTRONIC MEMORY DEVICES
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- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
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Abstract
Description
Claims (23)
- 절연막에 형성된 콘택홀에 위치하는 제1전극 플러그;상기 제1전극 플러그와 상기 제1전극 플러그 주위의 절연막을 덮는 저항 메모리 요소 패턴; 그리고상기 저항 메모리 요소 패턴 위에 배치된 제2전극을 포함하는 저항 메모리 셀.
- 제1항에 있어서,상기 제1전극 플러그의 지름은 상기 제2전극의 최소폭보다 작은 것을 특징으로 하는 저항 메모리 셀.
- 제1항 또는 제2항에 있어서,상기 저항 메모리 요소 패턴은 페로브스카이트 결정상을 나타내는 절연물질, 전이금속의 산화물, 또는 이들의 조합인 것을 특징으로 하는 저항 메모리 셀.
- 제3항에 있어서,상기 제1전극 플러그와 상기 저항 메모리 요소 패턴의 중첩에 의한 면적은 상기 제2전극과 상기 저항 메모리 요소 패턴의 중첩에 의한 면적보다 작은 것을 특 징으로 하는 저항 메모리 셀.
- 제3항에 있어서,상기 제2전극의 최소폭은 상기 저항 메모리 요소 패턴의 최소폭보다 더 넓은 것을 특징으로 하는 저항 메모리 셀.
- 제3항에 있어서,상기 콘택홀과 상기 제1전극 플러그 사이에 절연성 스페이서가 위치하는 것을 특징으로 하는 저항 메모리 셀.
- 제6항에 있어서,상기 제1전극 플러그는 상기 콘택홀의 일부분을 채우며,상기 저항 메모리 요소 패턴은 상기 콘택홀의 나머지 부분을 채우는 것을 특징으로 하는 저항 메모리 셀.
- 서로 평행한 복수 개의 제1전극 라인들;상기 제1전극 라인들과 직교하며 서로 평행한 복수 개의 제2전극 라인들;서로 마주보는 상기 제1전극 라인들 및 상기 제2전극 라인들의 면들 중 어느 한 전극 라인의 면들에 각각 배치된 저항 메모리 요소 패턴;상기 제1전극 라인들과 제2전극 라인들이 교차하는 부분에서 상기 제1전극 라인 또는 상기 제2전극 라인 중 어느 하나와 상기 저항 메모리 요소 패턴을 연결하는 복수 개의 전극 플러그를 포함하는 저항 메모리 배열.
- 제8항에 있어서,상기 전극 플러그의 지름은 상기 제1 및 제2 전극 라인들의 폭보다 작은 것을 특징으로 하는 저항 메모리 배열.
- 제8항 또는 제9항에 있어서,상기 저항 메모리 요소 패턴은 페로브스카이트 결정상을 나타내는 절연물질, 전이금속의 산화물, 또는 이들의 조합인 것을 특징으로 하는 저항 메모리 배열.
- 제10항에 있어서,상기 전극 플러그와 상기 저항 메모리 요소 패턴 사이의 중첩면적은 상기 저항 메모리 요소 패턴과 그것이 접촉하는 전극 라인 사이의 중첩면적보다 작은 것을 특징으로 하는 저항 메모리 배열.
- 제11항에 있어서,상기 저항 메모리 요소 패턴의 폭은 그것이 접촉하는 전극 라인의 폭이상인 것을 특징으로 하는 저항 메모리 배열.
- 절연막에 의해서 절연되면서 층층이 쌓이고 그리고 인접하는 층 사이에서 서로 교차하도록 배치되는 서로 평행한 복수 개의 전극 라인들;각 층의 전극 라인과 절연막 사이에 배치된 저항 메모리 요소 패턴;교차하는 전극 라인들의 교점 부분의 절연막을 관통하여 인접한 층의 전극 라인 및 저항 메모리 요소 패턴을 연결시키는 복수 개의 전극 플러그를 포함하는 다층 저항 메모리 배열.
- 제13항에 있어서,상기 전극 플러그의 지름이 상기 전극 라인의 폭보다 작은 것을 특징으로 하는 다층 저항 메모리 배열.
- 제13항 또는 제14항에 있어서,상기 저항 메모리 요소 패턴은 페로브스카이트 결정상을 나타내는 절연물질, 전이금속의 산화물, 또는 이들의 조합인 것을 특징으로 하는 다층 저항 메모리 배열.
- 제15항에 있어서,상기 저항 메모리 요소 패턴은 상기 전극 라인과 동일한 모양인 것을 특징으로 하는 다층 저항 메모리 배열.
- 제15항에 있어서,상기 저항 메모리 요소 패턴 위에 복수 개의 전극 라인들이 위치하는 것을 특징으로 하는 다층 저항 메모리 배열.
- 기판 상에 콘택홀을 구비하는 제1절연막을 형성하는 단계;상기 제1콘택홀을 도전물질로 채워 제1전극 플러그를 형성하는 단계;상기 제1전극 플러그 및 상기 제1전극 플러그 주위의 제1절연막 상에 제1저항 메모리 요소 박막 및 제2전극을 위한 도전막을 형성하는 단계를 포함하는 저항 메모리 셀 형성 방법.
- 제18항에 있어서,상기 도전막을 패터닝하여 제2전극을 형성하는 단계를 더 포함하는 저항 메모리 셀 형성 방법.
- 제19항에 있어서,상기 도전막을 패터닝할 때 하부의 제1저항 메모리 요소 박막도 동시에 패터닝하는 것을 특징으로 하는 저항 메모리 셀 형성 방법.
- 제19항에 있어서,상기 제1전극 플러그를 형성하기 전에 상기 제1콘택홀 측벽에 절연성 스페이 서를 형성하는 단계를 더 포함하는 저항 메모리 셀 형성 방법.
- 제19항 내지 제21항 중 어느 한 항에 있어서,상기 제1전극 플러그에 전기적으로 연결되며 상기 제2전극에 직교하는 도전성 라인을 형성하는 단계를 더 포함하되,상기 도전성 라인은 상기 절연막을 형성하기 전에 형성되는 것을 특징으로 하는 저항 메모리 셀 형성 방법.
- 제19항 내지 제21항 중 어느 한 항에 있어서,상기 제2전극 및 제1절연막 상에 제2절연막을 형성하고;상기 제1절연막을 패터닝하여 상기 제1콘택홀에 중첩되는 제2콘택홀을 형성하고;상기 제2콘택홀을 도전물질로 채워 제3전극 플러그를 형성하고;상기 제2절연막 및 제3전극 플러그 상에 제2저항 메모리 요소 박막 및 제4전극을 위한 도전막을 형성하는 것을 더 포함하는 저항 메모리 셀 형성 방법.
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US13/100,702 US20110204314A1 (en) | 2005-03-28 | 2011-05-04 | Resistive memory cells and devices having asymmetrical contacts |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9373664B2 (en) | 2014-07-28 | 2016-06-21 | Samsung Electronics Co., Ltd. | Variable resistance memory devices and methods of manufacturing the same |
US10565497B2 (en) | 2015-12-30 | 2020-02-18 | SK Hynix Inc. | Synapse and neuromorphic device including the same |
Families Citing this family (120)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060171200A1 (en) | 2004-02-06 | 2006-08-03 | Unity Semiconductor Corporation | Memory using mixed valence conductive oxides |
US7082052B2 (en) | 2004-02-06 | 2006-07-25 | Unity Semiconductor Corporation | Multi-resistive state element with reactive metal |
US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
US8937292B2 (en) | 2011-08-15 | 2015-01-20 | Unity Semiconductor Corporation | Vertical cross point arrays for ultra high density memory applications |
US8270193B2 (en) | 2010-01-29 | 2012-09-18 | Unity Semiconductor Corporation | Local bit lines and methods of selecting the same to access memory elements in cross-point arrays |
US8559209B2 (en) | 2011-06-10 | 2013-10-15 | Unity Semiconductor Corporation | Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements |
US8565003B2 (en) | 2011-06-28 | 2013-10-22 | Unity Semiconductor Corporation | Multilayer cross-point memory array having reduced disturb susceptibility |
KR100723872B1 (ko) * | 2005-06-30 | 2007-05-31 | 한국전자통신연구원 | 급격한 금속-절연체 전이를 이용한 메모리소자 및 그동작방법 |
KR100622268B1 (ko) * | 2005-07-04 | 2006-09-11 | 한양대학교 산학협력단 | ReRAM 소자용 다층 이원산화박막의 형성방법 |
JP4166820B2 (ja) * | 2006-03-09 | 2008-10-15 | 松下電器産業株式会社 | 抵抗変化型素子、半導体装置、およびその製造方法 |
KR100818271B1 (ko) * | 2006-06-27 | 2008-03-31 | 삼성전자주식회사 | 펄스전압을 인가하는 비휘발성 메모리 소자의 문턱 스위칭동작 방법 |
US7807995B2 (en) | 2006-07-27 | 2010-10-05 | Panasonic Corporation | Nonvolatile semiconductor memory apparatus and manufacturing method thereof |
US7778063B2 (en) * | 2006-11-08 | 2010-08-17 | Symetrix Corporation | Non-volatile resistance switching memories and methods of making same |
US7872900B2 (en) * | 2006-11-08 | 2011-01-18 | Symetrix Corporation | Correlated electron memory |
EP2082426B1 (en) * | 2006-11-08 | 2012-12-26 | Symetrix Corporation | Correlated electron memory |
KR101206036B1 (ko) * | 2006-11-16 | 2012-11-28 | 삼성전자주식회사 | 전이 금속 고용체를 포함하는 저항성 메모리 소자 및 그제조 방법 |
KR100801084B1 (ko) * | 2007-01-08 | 2008-02-05 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 제조 방법 |
JP2008177397A (ja) * | 2007-01-19 | 2008-07-31 | Fujitsu Ltd | 薄膜抵抗測定方法およびトンネル磁気抵抗素子の製造方法 |
US7667220B2 (en) * | 2007-01-19 | 2010-02-23 | Macronix International Co., Ltd. | Multilevel-cell memory structures employing multi-memory with tungsten oxides and manufacturing method |
WO2008123139A1 (ja) * | 2007-03-26 | 2008-10-16 | Murata Manufacturing Co., Ltd. | 抵抗記憶素子 |
JP5283975B2 (ja) * | 2007-06-07 | 2013-09-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置ならびにそのデータ書込方法およびデータ読出方法 |
KR20090026580A (ko) | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성방법 |
US7667293B2 (en) * | 2007-09-13 | 2010-02-23 | Macronix International Co., Ltd. | Resistive random access memory and method for manufacturing the same |
US20090095985A1 (en) * | 2007-10-10 | 2009-04-16 | Samsung Electronics Co., Ltd. | Multi-layer electrode, cross point memory array and method of manufacturing the same |
JP2010287582A (ja) * | 2007-10-15 | 2010-12-24 | Panasonic Corp | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 |
JP5229892B2 (ja) * | 2007-10-30 | 2013-07-03 | 独立行政法人産業技術総合研究所 | 整流素子及びその製造方法 |
US8253136B2 (en) * | 2007-10-30 | 2012-08-28 | Panasonic Corporation | Nonvolatile semiconductor memory device and manufacturing method thereof |
JP2009135131A (ja) | 2007-11-28 | 2009-06-18 | Toshiba Corp | 半導体記憶装置 |
US8198618B2 (en) * | 2007-12-10 | 2012-06-12 | Panasonic Corporation | Nonvolatile memory device and manufacturing method thereof |
US8283214B1 (en) * | 2007-12-21 | 2012-10-09 | Intermolecular, Inc. | Methods for forming nickel oxide films for use with resistive switching memory devices |
US7768812B2 (en) | 2008-01-15 | 2010-08-03 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
CN101946321B (zh) * | 2008-02-12 | 2014-03-26 | 松下电器产业株式会社 | 非易失性半导体存储装置及其制造方法 |
US8143092B2 (en) * | 2008-03-10 | 2012-03-27 | Pragati Kumar | Methods for forming resistive switching memory elements by heating deposited layers |
JP2009224403A (ja) * | 2008-03-13 | 2009-10-01 | Toshiba Corp | 情報記録素子及びそれを備えた情報記録再生装置 |
JP5113584B2 (ja) * | 2008-03-28 | 2013-01-09 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
US8034655B2 (en) | 2008-04-08 | 2011-10-11 | Micron Technology, Inc. | Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays |
US8211743B2 (en) | 2008-05-02 | 2012-07-03 | Micron Technology, Inc. | Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes |
JP2009272015A (ja) | 2008-05-09 | 2009-11-19 | Spansion Llc | 半導体装置及びその制御方法 |
US8305793B2 (en) * | 2008-05-16 | 2012-11-06 | Qimonda Ag | Integrated circuit with an array of resistance changing memory cells |
US8134137B2 (en) | 2008-06-18 | 2012-03-13 | Micron Technology, Inc. | Memory device constructions, memory cell forming methods, and semiconductor construction forming methods |
US9343665B2 (en) * | 2008-07-02 | 2016-05-17 | Micron Technology, Inc. | Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array |
KR100983175B1 (ko) * | 2008-07-03 | 2010-09-20 | 광주과학기술원 | 산화물막과 고체 전해질막을 구비하는 저항 변화 메모리소자, 및 이의 동작방법 |
CN101978496B (zh) | 2008-07-11 | 2012-11-07 | 松下电器产业株式会社 | 非易失性存储元件和其制造方法、以及使用该非易失性存储元件的非易失性半导体装置 |
JP2010027835A (ja) * | 2008-07-18 | 2010-02-04 | Renesas Technology Corp | 不揮発性記憶装置およびその製造方法 |
JP5343440B2 (ja) * | 2008-08-01 | 2013-11-13 | 富士通セミコンダクター株式会社 | 抵抗変化素子、抵抗変化素子の製造方法および半導体メモリ |
US8350245B2 (en) | 2008-12-10 | 2013-01-08 | Panasonic Corporation | Variable resistance element and nonvolatile semiconductor memory device using the same |
JP2012084557A (ja) * | 2009-01-26 | 2012-04-26 | Osaka Univ | 不揮発性メモリセル、抵抗可変型不揮発性メモリ装置および不揮発性メモリセルの設計方法 |
US8420478B2 (en) * | 2009-03-31 | 2013-04-16 | Intermolecular, Inc. | Controlled localized defect paths for resistive memories |
EP2239795A1 (en) * | 2009-04-10 | 2010-10-13 | Imec | Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof |
WO2010115924A1 (en) * | 2009-04-10 | 2010-10-14 | Imec | METHOD FOR MANUFACTURING A MEMORY ELEMENT COMPRISING A RESISTIVITY-SWITCHING NiO LAYER AND DEVICES OBTAINED THEREOF |
EP2259267B1 (en) * | 2009-06-02 | 2013-08-21 | Imec | Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof |
WO2010146850A1 (ja) | 2009-06-18 | 2010-12-23 | パナソニック株式会社 | 不揮発性記憶装置及びその製造方法 |
US8431446B1 (en) | 2009-12-29 | 2013-04-30 | MicronTechnology, Inc | Via formation for cross-point memory |
US8638584B2 (en) * | 2010-02-02 | 2014-01-28 | Unity Semiconductor Corporation | Memory architectures and techniques to enhance throughput for cross-point arrays |
JP5669422B2 (ja) * | 2010-03-31 | 2015-02-12 | キヤノンアネルバ株式会社 | 不揮発性記憶素子およびその製造方法 |
US8411477B2 (en) | 2010-04-22 | 2013-04-02 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8427859B2 (en) | 2010-04-22 | 2013-04-23 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8289763B2 (en) | 2010-06-07 | 2012-10-16 | Micron Technology, Inc. | Memory arrays |
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US8946046B1 (en) | 2012-05-02 | 2015-02-03 | Crossbar, Inc. | Guided path for forming a conductive filament in RRAM |
US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
US9437297B2 (en) | 2010-06-14 | 2016-09-06 | Crossbar, Inc. | Write and erase scheme for resistive memory device |
US8274812B2 (en) | 2010-06-14 | 2012-09-25 | Crossbar, Inc. | Write and erase scheme for resistive memory device |
US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
US8860223B1 (en) * | 2010-07-15 | 2014-10-14 | Micron Technology, Inc. | Resistive random access memory |
US8351242B2 (en) | 2010-09-29 | 2013-01-08 | Micron Technology, Inc. | Electronic devices, memory devices and memory arrays |
US8759809B2 (en) | 2010-10-21 | 2014-06-24 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer |
US8526213B2 (en) | 2010-11-01 | 2013-09-03 | Micron Technology, Inc. | Memory cells, methods of programming memory cells, and methods of forming memory cells |
US8796661B2 (en) | 2010-11-01 | 2014-08-05 | Micron Technology, Inc. | Nonvolatile memory cells and methods of forming nonvolatile memory cell |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
US9454997B2 (en) | 2010-12-02 | 2016-09-27 | Micron Technology, Inc. | Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells |
US8431458B2 (en) | 2010-12-27 | 2013-04-30 | Micron Technology, Inc. | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells |
US8791447B2 (en) | 2011-01-20 | 2014-07-29 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
CN102148328B (zh) * | 2011-01-21 | 2013-04-17 | 北京大学 | 一种氧化物电阻存储器件及其制备方法 |
US8488365B2 (en) * | 2011-02-24 | 2013-07-16 | Micron Technology, Inc. | Memory cells |
CN102157688B (zh) * | 2011-03-23 | 2012-07-18 | 北京大学 | 一种阻变存储器及其制备方法 |
US8537592B2 (en) | 2011-04-15 | 2013-09-17 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
US10566056B2 (en) | 2011-06-10 | 2020-02-18 | Unity Semiconductor Corporation | Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
US8891276B2 (en) | 2011-06-10 | 2014-11-18 | Unity Semiconductor Corporation | Memory array with local bitlines and local-to-global bitline pass gates and gain stages |
US9117495B2 (en) | 2011-06-10 | 2015-08-25 | Unity Semiconductor Corporation | Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US9058865B1 (en) | 2011-06-30 | 2015-06-16 | Crossbar, Inc. | Multi-level cell operation in silver/amorphous silicon RRAM |
US8946669B1 (en) * | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
US8659929B2 (en) | 2011-06-30 | 2014-02-25 | Crossbar, Inc. | Amorphous silicon RRAM with non-linear device and operation |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
US8846443B2 (en) * | 2011-08-05 | 2014-09-30 | Intermolecular, Inc. | Atomic layer deposition of metal oxides for memory applications |
US8288297B1 (en) * | 2011-09-01 | 2012-10-16 | Intermolecular, Inc. | Atomic layer deposition of metal oxide materials for memory applications |
US9082479B2 (en) * | 2011-10-06 | 2015-07-14 | Panasonic Intellectual Property Management Co., Ltd. | Nonvolatile memory element and nonvolatile memory device |
JP2013089662A (ja) | 2011-10-14 | 2013-05-13 | Renesas Electronics Corp | 半導体装置 |
JP5871313B2 (ja) * | 2012-01-18 | 2016-03-01 | 国立大学法人大阪大学 | 不揮発性メモリセル、これを備える不揮発性メモリ装置および遷移金属酸化物の選定方法。 |
US8971088B1 (en) | 2012-03-22 | 2015-03-03 | Crossbar, Inc. | Multi-level cell operation using zinc oxide switching material in non-volatile memory device |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
US8675423B2 (en) * | 2012-05-07 | 2014-03-18 | Micron Technology, Inc. | Apparatuses and methods including supply current in memory |
US9245926B2 (en) | 2012-05-07 | 2016-01-26 | Micron Technology, Inc. | Apparatuses and methods including memory access in cross point memory |
US8853713B2 (en) * | 2012-05-07 | 2014-10-07 | Micron Technology, Inc. | Resistive memory having confined filament formation |
US9741765B1 (en) | 2012-08-14 | 2017-08-22 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
US9847480B2 (en) * | 2012-09-28 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistance variable memory structure and method of forming the same |
US8947909B1 (en) * | 2012-10-05 | 2015-02-03 | Marvell International Ltd. | System and method for creating a bipolar resistive RAM (RRAM) |
US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
US8866118B2 (en) * | 2012-12-21 | 2014-10-21 | Intermolecular, Inc. | Morphology control of ultra-thin MeOx layer |
US9153624B2 (en) | 2013-03-14 | 2015-10-06 | Crossbar, Inc. | Scaling of filament based RRAM |
KR102092772B1 (ko) * | 2013-03-27 | 2020-03-24 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법, 이 반도체 장치를 포함하는 마이크로 프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템 |
KR102102175B1 (ko) | 2013-11-05 | 2020-04-21 | 삼성전자 주식회사 | 저항체를 이용한 비휘발성 메모리 장치의 테스트 방법 |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
US20160104840A1 (en) * | 2014-10-10 | 2016-04-14 | Beth Cook | Resistive memory with a thermally insulating region |
US9735357B2 (en) | 2015-02-03 | 2017-08-15 | Crossbar, Inc. | Resistive memory cell with intrinsic current control |
US10840442B2 (en) | 2015-05-22 | 2020-11-17 | Crossbar, Inc. | Non-stoichiometric resistive switching memory device and fabrication methods |
US9899083B1 (en) * | 2016-11-01 | 2018-02-20 | Arm Ltd. | Method, system and device for non-volatile memory device operation with low power high speed and high density |
EP3539132A4 (en) * | 2016-11-14 | 2019-11-27 | Hefei Reliance Memory Limited | SCHEME FOR INTEGRATING A RRAM METHOD AND CELL STRUCTURE WITH REDUCED MASKING OPERATIONS |
JP6280195B1 (ja) | 2016-12-16 | 2018-02-14 | 株式会社東芝 | 磁気メモリ |
US10950663B2 (en) * | 2018-04-24 | 2021-03-16 | Micron Technology, Inc. | Cross-point memory array and related fabrication techniques |
KR102142563B1 (ko) | 2018-11-23 | 2020-08-10 | 한국화학연구원 | 저 전력 및 고 신뢰성 멀티 비트 동작이 가능한 저항 스위칭 장치 |
US11139025B2 (en) | 2020-01-22 | 2021-10-05 | International Business Machines Corporation | Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030003020A (ko) * | 2001-06-28 | 2003-01-09 | 샤프 가부시키가이샤 | 전기적으로 프로그램가능한 저항 교점 메모리 |
KR20040041015A (ko) * | 2002-11-08 | 2004-05-13 | 샤프 가부시키가이샤 | 비휘발성 가변 저항 소자, 메모리 장치, 및 비휘발성 가변저항 소자의 스케일링 방법 |
JP2004311969A (ja) | 2003-03-17 | 2004-11-04 | Sharp Corp | ナノスケール抵抗クロスポイント型メモリアレイおよびデバイスを製造する方法 |
KR20040101037A (ko) * | 2003-05-21 | 2004-12-02 | 샤프 가부시키가이샤 | 비대칭 메모리 셀 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5789758A (en) * | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US5869843A (en) * | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
JP3211809B2 (ja) * | 1999-04-23 | 2001-09-25 | ソニー株式会社 | 半導体記憶装置およびその製造方法 |
US6700813B2 (en) * | 2001-04-03 | 2004-03-02 | Canon Kabushiki Kaisha | Magnetic memory and driving method therefor |
EP1321941B1 (en) * | 2001-12-21 | 2005-08-17 | Kabushiki Kaisha Toshiba | Magnetic random access memory with stacked memory cells |
JP3624291B2 (ja) * | 2002-04-09 | 2005-03-02 | 松下電器産業株式会社 | 不揮発性メモリおよびその製造方法 |
KR100434958B1 (ko) * | 2002-05-24 | 2004-06-11 | 주식회사 하이닉스반도체 | 마그네틱 램 |
US6850429B2 (en) * | 2002-08-02 | 2005-02-01 | Unity Semiconductor Corporation | Cross point memory array with memory plugs exhibiting a characteristic hysteresis |
JP3788964B2 (ja) * | 2002-09-10 | 2006-06-21 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US7115927B2 (en) | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
KR100560659B1 (ko) | 2003-03-21 | 2006-03-16 | 삼성전자주식회사 | 상변화 기억 소자 및 그 제조 방법 |
JP4008857B2 (ja) * | 2003-03-24 | 2007-11-14 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
WO2004090984A1 (en) * | 2003-04-03 | 2004-10-21 | Kabushiki Kaisha Toshiba | Phase change memory device |
JP2004319587A (ja) * | 2003-04-11 | 2004-11-11 | Sharp Corp | メモリセル、メモリ装置及びメモリセル製造方法 |
KR100504700B1 (ko) * | 2003-06-04 | 2005-08-03 | 삼성전자주식회사 | 고집적 상변환 램 |
JP2005079258A (ja) * | 2003-08-29 | 2005-03-24 | Canon Inc | 磁性体のエッチング加工方法、磁気抵抗効果膜、および磁気ランダムアクセスメモリ |
US6949435B2 (en) | 2003-12-08 | 2005-09-27 | Sharp Laboratories Of America, Inc. | Asymmetric-area memory cell |
US6849891B1 (en) | 2003-12-08 | 2005-02-01 | Sharp Laboratories Of America, Inc. | RRAM memory cell electrodes |
JP4120589B2 (ja) * | 2004-01-13 | 2008-07-16 | セイコーエプソン株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
US7521705B2 (en) * | 2005-08-15 | 2009-04-21 | Micron Technology, Inc. | Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
US7381982B2 (en) * | 2005-08-26 | 2008-06-03 | Macronix International Co., Ltd. | Method for fabricating chalcogenide-applied memory |
US8003972B2 (en) * | 2006-08-30 | 2011-08-23 | Micron Technology, Inc. | Bottom electrode geometry for phase change memory |
-
2005
- 2005-03-28 KR KR1020050025561A patent/KR100697282B1/ko active IP Right Grant
-
2006
- 2006-03-17 US US11/378,945 patent/US7639521B2/en active Active
- 2006-03-23 JP JP2006081592A patent/JP5047518B2/ja active Active
-
2009
- 2009-11-04 US US12/612,187 patent/US7961496B2/en active Active
-
2011
- 2011-05-04 US US13/100,702 patent/US20110204314A1/en not_active Abandoned
-
2013
- 2013-04-15 US US13/862,918 patent/US8873274B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030003020A (ko) * | 2001-06-28 | 2003-01-09 | 샤프 가부시키가이샤 | 전기적으로 프로그램가능한 저항 교점 메모리 |
KR20040041015A (ko) * | 2002-11-08 | 2004-05-13 | 샤프 가부시키가이샤 | 비휘발성 가변 저항 소자, 메모리 장치, 및 비휘발성 가변저항 소자의 스케일링 방법 |
JP2004311969A (ja) | 2003-03-17 | 2004-11-04 | Sharp Corp | ナノスケール抵抗クロスポイント型メモリアレイおよびデバイスを製造する方法 |
KR20040101037A (ko) * | 2003-05-21 | 2004-12-02 | 샤프 가부시키가이샤 | 비대칭 메모리 셀 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9373664B2 (en) | 2014-07-28 | 2016-06-21 | Samsung Electronics Co., Ltd. | Variable resistance memory devices and methods of manufacturing the same |
US10565497B2 (en) | 2015-12-30 | 2020-02-18 | SK Hynix Inc. | Synapse and neuromorphic device including the same |
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US7639521B2 (en) | 2009-12-29 |
US20130240826A1 (en) | 2013-09-19 |
US8873274B2 (en) | 2014-10-28 |
US20060215445A1 (en) | 2006-09-28 |
JP5047518B2 (ja) | 2012-10-10 |
US20100044666A1 (en) | 2010-02-25 |
US20110204314A1 (en) | 2011-08-25 |
JP2006279042A (ja) | 2006-10-12 |
KR20060103705A (ko) | 2006-10-04 |
US7961496B2 (en) | 2011-06-14 |
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