ATE490555T1 - Elektrisch programmierbare schmelzverbindung - Google Patents
Elektrisch programmierbare schmelzverbindungInfo
- Publication number
- ATE490555T1 ATE490555T1 AT06819175T AT06819175T ATE490555T1 AT E490555 T1 ATE490555 T1 AT E490555T1 AT 06819175 T AT06819175 T AT 06819175T AT 06819175 T AT06819175 T AT 06819175T AT E490555 T1 ATE490555 T1 AT E490555T1
- Authority
- AT
- Austria
- Prior art keywords
- electrically programmable
- fused connection
- programmable fused
- diode
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/266,740 US7659168B2 (en) | 2005-11-03 | 2005-11-03 | eFuse and methods of manufacturing the same |
| PCT/EP2006/067883 WO2007051765A2 (en) | 2005-11-03 | 2006-10-27 | Electrically programmable fuse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE490555T1 true ATE490555T1 (de) | 2010-12-15 |
Family
ID=37669600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06819175T ATE490555T1 (de) | 2005-11-03 | 2006-10-27 | Elektrisch programmierbare schmelzverbindung |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7659168B2 (de) |
| EP (1) | EP1946371B1 (de) |
| JP (1) | JP5226524B2 (de) |
| KR (1) | KR20080064149A (de) |
| CN (1) | CN101300677B (de) |
| AT (1) | ATE490555T1 (de) |
| DE (1) | DE602006018643D1 (de) |
| TW (1) | TWI392082B (de) |
| WO (1) | WO2007051765A2 (de) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7323761B2 (en) * | 2004-11-12 | 2008-01-29 | International Business Machines Corporation | Antifuse structure having an integrated heating element |
| US7320911B2 (en) * | 2004-12-06 | 2008-01-22 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
| US7851885B2 (en) * | 2007-03-07 | 2010-12-14 | International Business Machines Corporation | Methods and systems involving electrically programmable fuses |
| US8076754B2 (en) * | 2007-03-09 | 2011-12-13 | Silicon Laboratories | Silicide-interface polysilicon resistor |
| US20090045484A1 (en) * | 2007-08-16 | 2009-02-19 | International Business Machines Corporation | Methods and systems involving electrically reprogrammable fuses |
| US7759766B2 (en) * | 2007-08-22 | 2010-07-20 | International Business Machines Corporation | Electrical fuse having a thin fuselink |
| US7619295B2 (en) | 2007-10-10 | 2009-11-17 | Fairchild Semiconductor Corporation | Pinched poly fuse |
| US9058887B2 (en) * | 2007-10-30 | 2015-06-16 | International Business Machines Corporation | Reprogrammable electrical fuse |
| CN101170099B (zh) * | 2007-11-30 | 2012-03-28 | 上海宏力半导体制造有限公司 | 多晶硅硅化物电熔丝器件 |
| US7936582B1 (en) * | 2008-03-19 | 2011-05-03 | Xilinx, Inc. | E-fuse read circuit with dual comparators |
| US7977754B2 (en) | 2008-07-25 | 2011-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Poly resistor and poly eFuse design for replacement gate technology |
| US20100059823A1 (en) | 2008-09-10 | 2010-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive device for high-k metal gate technology and method of making |
| US8865592B2 (en) | 2009-02-03 | 2014-10-21 | Infineon Technologies Ag | Silicided semiconductor structure and method of forming the same |
| US8178945B2 (en) * | 2009-02-03 | 2012-05-15 | International Business Machines Corporation | Programmable PN anti-fuse |
| US8519507B2 (en) * | 2009-06-29 | 2013-08-27 | International Business Machines Corporation | Electrically programmable fuse using anisometric contacts and fabrication method |
| US8890260B2 (en) | 2009-09-04 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polysilicon design for replacement gate technology |
| US8530319B2 (en) | 2010-10-14 | 2013-09-10 | International Business Machines Corporation | Vertical silicide e-fuse |
| US8542517B2 (en) | 2011-06-13 | 2013-09-24 | International Business Machines Corporation | Low voltage programmable mosfet antifuse with body contact for diffusion heating |
| KR20120139361A (ko) | 2011-06-17 | 2012-12-27 | 삼성전자주식회사 | 이-퓨즈 구조체 및 그 동작 방법 |
| KR101896412B1 (ko) * | 2011-08-01 | 2018-09-07 | 페어차일드코리아반도체 주식회사 | 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법 |
| US8816473B2 (en) * | 2012-04-05 | 2014-08-26 | International Business Machines Corporation | Planar polysilicon regions for precision resistors and electrical fuses and method of fabrication |
| US9929150B2 (en) * | 2012-08-09 | 2018-03-27 | Infineon Technologies Ag | Polysilicon diode bandgap reference |
| US9293414B2 (en) | 2013-06-26 | 2016-03-22 | Globalfoundries Inc. | Electronic fuse having a substantially uniform thermal profile |
| US9159667B2 (en) | 2013-07-26 | 2015-10-13 | Globalfoundries Inc. | Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure |
| CN104425446B (zh) * | 2013-08-20 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | 电熔丝结构及其使用方法 |
| JP6132032B2 (ja) * | 2013-12-12 | 2017-05-24 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| CN105470238A (zh) * | 2014-09-09 | 2016-04-06 | 中芯国际集成电路制造(上海)有限公司 | 一种电可编程熔丝器件、集成电路和电子装置 |
| FR3063573B1 (fr) * | 2017-03-01 | 2019-05-03 | Stmicroelectronics (Rousset) Sas | Dispositif fusible integre |
| US10510662B2 (en) * | 2017-11-07 | 2019-12-17 | Globalfoundries Inc. | Vertically oriented metal silicide containing e-fuse device and methods of making same |
| CN109244061A (zh) * | 2018-09-03 | 2019-01-18 | 上海华虹宏力半导体制造有限公司 | 电可编程熔丝结构及其形成方法 |
| KR20230045177A (ko) | 2021-09-28 | 2023-04-04 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5708291A (en) | 1995-09-29 | 1998-01-13 | Intel Corporation | Silicide agglomeration fuse device |
| US6088256A (en) | 1998-09-25 | 2000-07-11 | Stmicroelectronics, Inc. | Integrated circuit with electrically programmable fuse resistor |
| US6323534B1 (en) * | 1999-04-16 | 2001-11-27 | Micron Technology, Inc. | Fuse for use in a semiconductor device |
| US6580156B1 (en) | 2002-04-04 | 2003-06-17 | Broadcom Corporation | Integrated fuse with regions of different doping within the fuse neck |
| KR100448909B1 (ko) * | 2002-09-27 | 2004-09-16 | 삼성전자주식회사 | 퓨즈 구조 및 그것을 이용한 집적 회로 장치 |
| US6621138B1 (en) | 2002-10-21 | 2003-09-16 | Micrel, Inc. | Zener-like trim device in polysilicon |
| US6933591B1 (en) | 2003-10-16 | 2005-08-23 | Altera Corporation | Electrically-programmable integrated circuit fuses and sensing circuits |
| US6956277B1 (en) | 2004-03-23 | 2005-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode junction poly fuse |
| US7323761B2 (en) * | 2004-11-12 | 2008-01-29 | International Business Machines Corporation | Antifuse structure having an integrated heating element |
| US7382036B2 (en) * | 2005-07-29 | 2008-06-03 | International Business Machines Corporation | Doped single crystal silicon silicided eFuse |
-
2005
- 2005-11-03 US US11/266,740 patent/US7659168B2/en active Active
-
2006
- 2006-10-27 WO PCT/EP2006/067883 patent/WO2007051765A2/en active Application Filing
- 2006-10-27 EP EP06819175A patent/EP1946371B1/de active Active
- 2006-10-27 AT AT06819175T patent/ATE490555T1/de not_active IP Right Cessation
- 2006-10-27 DE DE602006018643T patent/DE602006018643D1/de active Active
- 2006-10-27 CN CN2006800408796A patent/CN101300677B/zh active Active
- 2006-10-27 JP JP2008538343A patent/JP5226524B2/ja active Active
- 2006-10-27 KR KR1020087010994A patent/KR20080064149A/ko not_active Application Discontinuation
- 2006-11-01 TW TW095140404A patent/TWI392082B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN101300677B (zh) | 2010-05-19 |
| EP1946371B1 (de) | 2010-12-01 |
| EP1946371A2 (de) | 2008-07-23 |
| WO2007051765A3 (en) | 2007-06-28 |
| CN101300677A (zh) | 2008-11-05 |
| JP2009515330A (ja) | 2009-04-09 |
| DE602006018643D1 (de) | 2011-01-13 |
| TWI392082B (zh) | 2013-04-01 |
| TW200733350A (en) | 2007-09-01 |
| JP5226524B2 (ja) | 2013-07-03 |
| US7659168B2 (en) | 2010-02-09 |
| KR20080064149A (ko) | 2008-07-08 |
| US20070099326A1 (en) | 2007-05-03 |
| WO2007051765A2 (en) | 2007-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |