DE602006018643D1 - Elektrisch programmierbare schmelzverbindung - Google Patents

Elektrisch programmierbare schmelzverbindung

Info

Publication number
DE602006018643D1
DE602006018643D1 DE602006018643T DE602006018643T DE602006018643D1 DE 602006018643 D1 DE602006018643 D1 DE 602006018643D1 DE 602006018643 T DE602006018643 T DE 602006018643T DE 602006018643 T DE602006018643 T DE 602006018643T DE 602006018643 D1 DE602006018643 D1 DE 602006018643D1
Authority
DE
Germany
Prior art keywords
electrically programmable
melting connection
diode
layer
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006018643T
Other languages
English (en)
Inventor
Louis Lu-Chen Hsu
Jack Mandelman
William Tonti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE602006018643D1 publication Critical patent/DE602006018643D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE602006018643T 2005-11-03 2006-10-27 Elektrisch programmierbare schmelzverbindung Active DE602006018643D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/266,740 US7659168B2 (en) 2005-11-03 2005-11-03 eFuse and methods of manufacturing the same
PCT/EP2006/067883 WO2007051765A2 (en) 2005-11-03 2006-10-27 Electrically programmable fuse

Publications (1)

Publication Number Publication Date
DE602006018643D1 true DE602006018643D1 (de) 2011-01-13

Family

ID=37669600

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006018643T Active DE602006018643D1 (de) 2005-11-03 2006-10-27 Elektrisch programmierbare schmelzverbindung

Country Status (9)

Country Link
US (1) US7659168B2 (de)
EP (1) EP1946371B1 (de)
JP (1) JP5226524B2 (de)
KR (1) KR20080064149A (de)
CN (1) CN101300677B (de)
AT (1) ATE490555T1 (de)
DE (1) DE602006018643D1 (de)
TW (1) TWI392082B (de)
WO (1) WO2007051765A2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323761B2 (en) * 2004-11-12 2008-01-29 International Business Machines Corporation Antifuse structure having an integrated heating element
US7320911B2 (en) * 2004-12-06 2008-01-22 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7851885B2 (en) * 2007-03-07 2010-12-14 International Business Machines Corporation Methods and systems involving electrically programmable fuses
US8076754B2 (en) * 2007-03-09 2011-12-13 Silicon Laboratories Silicide-interface polysilicon resistor
US20090045484A1 (en) * 2007-08-16 2009-02-19 International Business Machines Corporation Methods and systems involving electrically reprogrammable fuses
US7759766B2 (en) * 2007-08-22 2010-07-20 International Business Machines Corporation Electrical fuse having a thin fuselink
US7619295B2 (en) 2007-10-10 2009-11-17 Fairchild Semiconductor Corporation Pinched poly fuse
US9058887B2 (en) * 2007-10-30 2015-06-16 International Business Machines Corporation Reprogrammable electrical fuse
CN101170099B (zh) * 2007-11-30 2012-03-28 上海宏力半导体制造有限公司 多晶硅硅化物电熔丝器件
US7936582B1 (en) * 2008-03-19 2011-05-03 Xilinx, Inc. E-fuse read circuit with dual comparators
US7977754B2 (en) * 2008-07-25 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Poly resistor and poly eFuse design for replacement gate technology
US20100059823A1 (en) * 2008-09-10 2010-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Resistive device for high-k metal gate technology and method of making
US8865592B2 (en) * 2009-02-03 2014-10-21 Infineon Technologies Ag Silicided semiconductor structure and method of forming the same
US8178945B2 (en) * 2009-02-03 2012-05-15 International Business Machines Corporation Programmable PN anti-fuse
US8519507B2 (en) 2009-06-29 2013-08-27 International Business Machines Corporation Electrically programmable fuse using anisometric contacts and fabrication method
US8890260B2 (en) 2009-09-04 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Polysilicon design for replacement gate technology
US8530319B2 (en) 2010-10-14 2013-09-10 International Business Machines Corporation Vertical silicide e-fuse
US8542517B2 (en) 2011-06-13 2013-09-24 International Business Machines Corporation Low voltage programmable mosfet antifuse with body contact for diffusion heating
KR20120139361A (ko) 2011-06-17 2012-12-27 삼성전자주식회사 이-퓨즈 구조체 및 그 동작 방법
KR101896412B1 (ko) * 2011-08-01 2018-09-07 페어차일드코리아반도체 주식회사 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법
US8816473B2 (en) * 2012-04-05 2014-08-26 International Business Machines Corporation Planar polysilicon regions for precision resistors and electrical fuses and method of fabrication
US9929150B2 (en) * 2012-08-09 2018-03-27 Infineon Technologies Ag Polysilicon diode bandgap reference
US9293414B2 (en) 2013-06-26 2016-03-22 Globalfoundries Inc. Electronic fuse having a substantially uniform thermal profile
US9159667B2 (en) 2013-07-26 2015-10-13 Globalfoundries Inc. Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure
CN104425446B (zh) * 2013-08-20 2017-12-29 中芯国际集成电路制造(上海)有限公司 电熔丝结构及其使用方法
CN105308754B (zh) * 2013-12-12 2018-02-13 富士电机株式会社 半导体装置及其制造方法
CN105470238A (zh) * 2014-09-09 2016-04-06 中芯国际集成电路制造(上海)有限公司 一种电可编程熔丝器件、集成电路和电子装置
FR3063573B1 (fr) * 2017-03-01 2019-05-03 Stmicroelectronics (Rousset) Sas Dispositif fusible integre
US10510662B2 (en) * 2017-11-07 2019-12-17 Globalfoundries Inc. Vertically oriented metal silicide containing e-fuse device and methods of making same
CN109244061A (zh) * 2018-09-03 2019-01-18 上海华虹宏力半导体制造有限公司 电可编程熔丝结构及其形成方法
KR20230045177A (ko) 2021-09-28 2023-04-04 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법
US20240188287A1 (en) * 2022-12-05 2024-06-06 Globalfoundries U.S. Inc. One-time programmable fuse using pn junction over gate metal layer, and related method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5708291A (en) 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
US6088256A (en) 1998-09-25 2000-07-11 Stmicroelectronics, Inc. Integrated circuit with electrically programmable fuse resistor
US6323534B1 (en) * 1999-04-16 2001-11-27 Micron Technology, Inc. Fuse for use in a semiconductor device
US6580156B1 (en) 2002-04-04 2003-06-17 Broadcom Corporation Integrated fuse with regions of different doping within the fuse neck
KR100448909B1 (ko) * 2002-09-27 2004-09-16 삼성전자주식회사 퓨즈 구조 및 그것을 이용한 집적 회로 장치
US6621138B1 (en) 2002-10-21 2003-09-16 Micrel, Inc. Zener-like trim device in polysilicon
US6933591B1 (en) 2003-10-16 2005-08-23 Altera Corporation Electrically-programmable integrated circuit fuses and sensing circuits
US6956277B1 (en) 2004-03-23 2005-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Diode junction poly fuse
US7323761B2 (en) * 2004-11-12 2008-01-29 International Business Machines Corporation Antifuse structure having an integrated heating element
US7382036B2 (en) * 2005-07-29 2008-06-03 International Business Machines Corporation Doped single crystal silicon silicided eFuse

Also Published As

Publication number Publication date
EP1946371B1 (de) 2010-12-01
KR20080064149A (ko) 2008-07-08
WO2007051765A2 (en) 2007-05-10
WO2007051765A3 (en) 2007-06-28
CN101300677B (zh) 2010-05-19
EP1946371A2 (de) 2008-07-23
US7659168B2 (en) 2010-02-09
CN101300677A (zh) 2008-11-05
TW200733350A (en) 2007-09-01
ATE490555T1 (de) 2010-12-15
JP5226524B2 (ja) 2013-07-03
US20070099326A1 (en) 2007-05-03
TWI392082B (zh) 2013-04-01
JP2009515330A (ja) 2009-04-09

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)