WO2009128669A3 - 발광 소자 및 그 제조방법 - Google Patents

발광 소자 및 그 제조방법 Download PDF

Info

Publication number
WO2009128669A3
WO2009128669A3 PCT/KR2009/001991 KR2009001991W WO2009128669A3 WO 2009128669 A3 WO2009128669 A3 WO 2009128669A3 KR 2009001991 W KR2009001991 W KR 2009001991W WO 2009128669 A3 WO2009128669 A3 WO 2009128669A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
layer over
type semiconductor
conductive type
over
Prior art date
Application number
PCT/KR2009/001991
Other languages
English (en)
French (fr)
Other versions
WO2009128669A2 (ko
Inventor
송준오
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080034933A external-priority patent/KR101534846B1/ko
Priority claimed from KR1020080041610A external-priority patent/KR101550913B1/ko
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to US12/988,437 priority Critical patent/US8502193B2/en
Priority to EP09732760.5A priority patent/EP2280426B1/en
Priority to CN2009801203782A priority patent/CN102047454B/zh
Publication of WO2009128669A2 publication Critical patent/WO2009128669A2/ko
Publication of WO2009128669A3 publication Critical patent/WO2009128669A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시예에 따른 발광 소자는 지지 기판; 상기 지지 기판 상에 웨이퍼 결합층; 상기 웨이퍼 결합층 상에 전류 차단층 및 반사성 전류 퍼짐층을 포함하는 제2 전극층; 상기 제2 전극층 상에 전류 주입층; 상기 전류 주입층 상에 슈퍼래티스 구조층; 상기 슈퍼래티스 구조층 상에 제2 도전형의 반도체층; 상기 제2 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제1 도전형의 반도체층; 및 상기 제1 도전형의 반도체층 상에 제1 전극층을 포함한다.
PCT/KR2009/001991 2008-04-16 2009-04-16 발광 소자 및 그 제조방법 WO2009128669A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/988,437 US8502193B2 (en) 2008-04-16 2009-04-16 Light-emitting device and fabricating method thereof
EP09732760.5A EP2280426B1 (en) 2008-04-16 2009-04-16 Light-emitting device
CN2009801203782A CN102047454B (zh) 2008-04-16 2009-04-16 发光器件及其制造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0034933 2008-04-16
KR1020080034933A KR101534846B1 (ko) 2008-04-16 2008-04-16 수직구조의 그룹 3족 질화물계 반도체 발광다이오드 소자및 제조방법
KR1020080041610A KR101550913B1 (ko) 2008-05-04 2008-05-04 수직구조의 그룹 3족 질화물계 반도체 발광다이오드 소자및 제조방법
KR10-2008-0041610 2008-05-04

Publications (2)

Publication Number Publication Date
WO2009128669A2 WO2009128669A2 (ko) 2009-10-22
WO2009128669A3 true WO2009128669A3 (ko) 2010-01-14

Family

ID=41199586

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001991 WO2009128669A2 (ko) 2008-04-16 2009-04-16 발광 소자 및 그 제조방법

Country Status (4)

Country Link
US (1) US8502193B2 (ko)
EP (1) EP2280426B1 (ko)
CN (1) CN102047454B (ko)
WO (1) WO2009128669A2 (ko)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8373152B2 (en) * 2008-03-27 2013-02-12 Lg Innotek Co., Ltd. Light-emitting element and a production method therefor
WO2009148253A2 (ko) 2008-06-02 2009-12-10 고려대학교 산학협력단 반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자
KR100999726B1 (ko) 2009-05-04 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
CN102142470B (zh) * 2010-01-28 2014-09-24 晶元光电股份有限公司 太阳能光电元件
CN102280552B (zh) * 2010-06-14 2015-06-03 鸿富锦精密工业（深圳）有限公司 发光二极管晶粒及其制作方法
CN101997070A (zh) * 2010-09-10 2011-03-30 北京工业大学 一种高反射低电压的倒装发光二极管及其制备方法
KR20120032258A (ko) * 2010-09-28 2012-04-05 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
KR20120040448A (ko) * 2010-10-19 2012-04-27 삼성엘이디 주식회사 수직형 발광 소자
JP5810293B2 (ja) * 2010-11-19 2015-11-11 パナソニックＩｐマネジメント株式会社 窒化物半導体装置
US8802461B2 (en) 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
CN102214753A (zh) * 2011-06-02 2011-10-12 中国科学院半导体研究所 应用石墨烯薄膜电流扩展层的氮化镓基垂直结构led
KR101781438B1 (ko) * 2011-06-14 2017-09-25 삼성전자주식회사 반도체 발광소자의 제조방법
US20130001510A1 (en) * 2011-06-29 2013-01-03 SemiLEDs Optoelectronics Co., Ltd. Optoelectronic device having current blocking insulation layer for uniform temperature distribution and method of fabrication
KR101286211B1 (ko) * 2012-02-16 2013-07-15 고려대학교 산학협력단 발광 소자 제조 방법 및 이를 이용하여 제조된 발광 소자
JP2014183285A (ja) * 2013-03-21 2014-09-29 Stanley Electric Co Ltd 発光素子
KR102108196B1 (ko) * 2013-04-05 2020-05-08 서울바이오시스 주식회사 성장 기판이 분리된 자외선 발광소자 및 그 제조 방법
TW201511328A (zh) * 2013-09-13 2015-03-16 Lextar Electronics Corp 發光二極體
DE102013113181A1 (de) * 2013-11-28 2015-05-28 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung des optoelektronischen Bauelements
JP6094819B2 (ja) * 2013-12-13 2017-03-15 ウシオ電機株式会社 半導体発光素子及びその製造方法
CN104617191A (zh) * 2015-01-14 2015-05-13 映瑞光电科技(上海)有限公司 一种具有电流阻挡结构的led垂直芯片及其制备方法
US9673352B2 (en) * 2015-04-30 2017-06-06 National Chiao Tung University Semiconductor light emitting device
KR101761835B1 (ko) * 2015-05-22 2017-07-26 서울바이오시스 주식회사 고효율 발광 다이오드
WO2016190569A1 (en) * 2015-05-22 2016-12-01 Seoul Viosys Co., Ltd. Light emitting diode with high efficiency
EP3347363B1 (en) * 2015-09-09 2020-01-01 H. Hoffnabb-La Roche Ag N-(3-azabicyclo[3.2.1]octan-8-yl)-8-(4-phenyl)-5,6,7,8-tetrahydro-[1,2,4]triazolo[l,5-a]pyridin-2-amine derivatives as gamma-secretase modulators for treating alzheimer's disease
CN105355742B (zh) * 2015-12-04 2017-11-07 天津三安光电有限公司 发光二极管芯片及其制作方法
US11411137B2 (en) * 2016-02-05 2022-08-09 The Regents Of The University Of California III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
CN106129196A (zh) * 2016-08-30 2016-11-16 扬州乾照光电有限公司 一种用于倒装led芯片的外延片及其制备方法
CN106206884B (zh) * 2016-09-26 2018-10-12 湘能华磊光电股份有限公司 Led外延p层生长方法
CN107068822A (zh) * 2017-01-16 2017-08-18 湘能华磊光电股份有限公司 一种光取出效率高的led外延结构及其生长方法
CN108110098B (zh) * 2017-10-25 2019-12-31 华灿光电（浙江）有限公司 一种氮化镓基发光二极管外延片及其制造方法
CN108258006B (zh) * 2017-12-21 2021-04-06 厦门市三安光电科技有限公司 微发光元件
CN108588662A (zh) * 2018-06-13 2018-09-28 东北大学 一种包含CrN扩散障层的导电复合涂层及制备方法
KR20210062777A (ko) 2019-11-21 2021-06-01 삼성전자주식회사 반도체 발광 소자 및 그 제조 방법
CN111261762A (zh) * 2020-03-20 2020-06-09 西安唐晶量子科技有限公司 一种具有电流阻挡层的氮化镓基垂直结构发光二极管及其制作方法
JP2021196583A (ja) * 2020-06-18 2021-12-27 株式会社ジャパンディスプレイ 表示装置
CN114242866B (zh) * 2021-12-10 2024-01-26 厦门乾照光电股份有限公司 一种垂直结构led芯片及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340509A (ja) * 1998-05-25 1999-12-10 Nichia Chem Ind Ltd 窒化物半導体素子
US6744071B2 (en) * 2002-01-28 2004-06-01 Nichia Corporation Nitride semiconductor element with a supporting substrate
WO2006080958A1 (en) * 2005-01-24 2006-08-03 Cree, Inc. Led with curent confinement structure and surface roughening
US20070145392A1 (en) * 2004-06-30 2007-06-28 Cree, Inc. Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308460A (ja) * 2000-04-27 2001-11-02 Sharp Corp 窒化物半導体レーザ素子とその光ピックアップ装置
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
US7795623B2 (en) * 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US8174037B2 (en) * 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7326963B2 (en) * 2004-12-06 2008-02-05 Sensor Electronic Technology, Inc. Nitride-based light emitting heterostructure
CN100388515C (zh) * 2005-09-30 2008-05-14 晶能光电（江西）有限公司 半导体发光器件及其制造方法
KR100832102B1 (ko) * 2005-11-14 2008-05-27 삼성전자주식회사 발광소자용 구조체 및 발광소자의 제조 방법
DE102006015788A1 (de) * 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
WO2007138656A1 (ja) * 2006-05-26 2007-12-06 Rohm Co., Ltd. 窒化物半導体発光素子
US7692203B2 (en) * 2006-10-20 2010-04-06 Hitachi Cable, Ltd. Semiconductor light emitting device
JP4770785B2 (ja) * 2007-04-25 2011-09-14 日立電線株式会社 発光ダイオード

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340509A (ja) * 1998-05-25 1999-12-10 Nichia Chem Ind Ltd 窒化物半導体素子
US6744071B2 (en) * 2002-01-28 2004-06-01 Nichia Corporation Nitride semiconductor element with a supporting substrate
US20070145392A1 (en) * 2004-06-30 2007-06-28 Cree, Inc. Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
WO2006080958A1 (en) * 2005-01-24 2006-08-03 Cree, Inc. Led with curent confinement structure and surface roughening

Also Published As

Publication number Publication date
EP2280426A4 (en) 2014-03-19
CN102047454B (zh) 2013-04-10
CN102047454A (zh) 2011-05-04
US8502193B2 (en) 2013-08-06
EP2280426A2 (en) 2011-02-02
WO2009128669A2 (ko) 2009-10-22
EP2280426B1 (en) 2017-07-05
US20110101304A1 (en) 2011-05-05

Similar Documents

Publication Publication Date Title
WO2009128669A3 (ko) 발광 소자 및 그 제조방법
WO2009134095A3 (ko) 발광 소자 및 그 제조방법
WO2009045082A3 (en) Light emitting device and method for fabricating the same
WO2009002040A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2009134029A3 (ko) 반도체 발광소자
WO2009145483A3 (ko) 발광 소자 및 그 제조방법
WO2009131319A3 (ko) 반도체 발광소자
WO2009084860A3 (en) Semiconductor light emitting device
WO2009075551A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2009154383A3 (ko) 반도체 발광소자
WO2009102617A3 (en) Device having power generating black mask and method of fabricating the same
WO2009120044A3 (ko) 발광소자 및 그 제조방법
WO2009145501A3 (ko) 발광 소자 및 그 제조방법
WO2009145502A3 (ko) 발광 소자
WO2009145465A3 (ko) 발광 소자 및 그 제조방법
WO2009120011A3 (ko) 발광소자 및 그 제조방법
WO2009099425A3 (en) Flexible devices including semiconductor nanocrystals, arrays, and methods
EP2333852A3 (en) Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system
WO2008112064A3 (en) Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
WO2009131401A3 (ko) 발광 소자 및 그 제조방법
WO2008156294A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2009057983A3 (en) Light emitting device package and method for fabricating the same
WO2009005311A3 (en) Light emitting device and method of fabricating the same
WO2009028860A3 (en) Light emitting device and method for fabricating the same
WO2007036164A8 (en) Semiconductor light-emitting device and method for making same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980120378.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09732760

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

REEP Request for entry into the european phase

Ref document number: 2009732760

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2009732760

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12988437

Country of ref document: US