WO2009145502A3 - 발광 소자 - Google Patents
발광 소자 Download PDFInfo
- Publication number
- WO2009145502A3 WO2009145502A3 PCT/KR2009/001764 KR2009001764W WO2009145502A3 WO 2009145502 A3 WO2009145502 A3 WO 2009145502A3 KR 2009001764 W KR2009001764 W KR 2009001764W WO 2009145502 A3 WO2009145502 A3 WO 2009145502A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- electrically conductive
- conductive semiconductor
- light
- semiconductor layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09754967.9A EP2264793B8 (en) | 2008-04-05 | 2009-04-06 | Light emitting diode |
US12/936,298 US8816370B2 (en) | 2008-04-05 | 2009-04-06 | Light-emitting element |
CN200980116966.9A CN102047445B (zh) | 2008-04-05 | 2009-04-06 | 发光元件 |
US14/339,205 US10224462B2 (en) | 2008-04-05 | 2014-07-23 | Light-emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080031909A KR101449030B1 (ko) | 2008-04-05 | 2008-04-05 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
KR10-2008-0031909 | 2008-04-05 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/936,298 A-371-Of-International US8816370B2 (en) | 2008-04-05 | 2009-04-06 | Light-emitting element |
US14/339,205 Continuation US10224462B2 (en) | 2008-04-05 | 2014-07-23 | Light-emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009145502A2 WO2009145502A2 (ko) | 2009-12-03 |
WO2009145502A3 true WO2009145502A3 (ko) | 2010-02-18 |
Family
ID=41377739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/001764 WO2009145502A2 (ko) | 2008-04-05 | 2009-04-06 | 발광 소자 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8816370B2 (ko) |
EP (1) | EP2264793B8 (ko) |
KR (1) | KR101449030B1 (ko) |
CN (2) | CN102047445B (ko) |
WO (1) | WO2009145502A2 (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110096680A (ko) * | 2010-02-23 | 2011-08-31 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101007137B1 (ko) * | 2010-03-08 | 2011-01-10 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101081135B1 (ko) | 2010-03-15 | 2011-11-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
DE102010044560A1 (de) | 2010-09-07 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
KR101719623B1 (ko) * | 2010-09-07 | 2017-03-24 | 엘지이노텍 주식회사 | 발광소자 |
TW201238079A (en) * | 2011-03-04 | 2012-09-16 | Genesis Photonics Inc | LED structure |
CN103094445A (zh) * | 2011-11-08 | 2013-05-08 | 鼎元光电科技股份有限公司 | 具不均匀侧边的发光二极管结构 |
CN103107258A (zh) * | 2011-11-14 | 2013-05-15 | 鼎元光电科技股份有限公司竹南分公司 | 具有波浪状侧边的发光二极管结构 |
KR101907619B1 (ko) * | 2012-03-15 | 2018-10-15 | 엘지이노텍 주식회사 | 발광 소자 |
WO2014022951A1 (zh) * | 2012-08-10 | 2014-02-13 | 海立尔股份有限公司 | 具全透明电极的led封装体结构 |
US9748446B2 (en) * | 2013-10-11 | 2017-08-29 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
JP6299540B2 (ja) * | 2014-09-16 | 2018-03-28 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
WO2016048333A1 (en) * | 2014-09-25 | 2016-03-31 | Hewlett Packard Enterprise Development Lp | A report comprising a masked value |
CN104795474B (zh) * | 2015-04-20 | 2018-10-16 | 映瑞光电科技(上海)有限公司 | 大功率led芯片及其制造方法 |
DE102015109786A1 (de) | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie optoelektronisches Halbleiterbauelement |
CN107331736A (zh) * | 2016-04-28 | 2017-11-07 | 中国科学院物理研究所 | 具有改善性能的led器件及其制造方法 |
US10217897B1 (en) | 2017-10-06 | 2019-02-26 | Wisconsin Alumni Research Foundation | Aluminum nitride-aluminum oxide layers for enhancing the efficiency of group III-nitride light-emitting devices |
CN107808912B (zh) * | 2017-10-27 | 2019-07-09 | 安徽三安光电有限公司 | 一种氮化物发光二极管及其制备方法 |
DE102018110187A1 (de) * | 2018-04-27 | 2019-10-31 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
DE102018117018A1 (de) * | 2018-07-13 | 2020-01-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einer silberhaltigen stromaufweitungsstruktur und optoelektronische vorrichtung |
CN110970532B (zh) * | 2018-09-28 | 2021-10-22 | 丁肇诚 | 可提升巨量转移良率的微发光二极管 |
CN112310257B (zh) * | 2019-07-26 | 2022-02-22 | 丁肇诚 | 保护层与其制造方法及用途 |
CN110491980B (zh) * | 2019-07-31 | 2021-08-24 | 厦门三安光电有限公司 | 一种紫外led芯片及其制备方法 |
US11296266B2 (en) * | 2019-11-26 | 2022-04-05 | Facebook Technologies, Llc | LED array having transparent substrate with conductive layer for enhanced current spread |
CN112272870B (zh) * | 2020-03-19 | 2024-04-02 | 厦门三安光电有限公司 | 发光二极管 |
CN112968100A (zh) * | 2020-08-14 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 一种发光器件、制备方法及电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060027815A1 (en) * | 2004-08-04 | 2006-02-09 | Wierer Jonathan J Jr | Photonic crystal light emitting device with multiple lattices |
US20060060874A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High efficiency group III nitride LED with lenticular surface |
WO2007089460A1 (en) * | 2006-01-30 | 2007-08-09 | Cree, Inc. | Improved external extraction light emitting diode based upon crystallographic faceted surfaces |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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US5557115A (en) * | 1994-08-11 | 1996-09-17 | Rohm Co. Ltd. | Light emitting semiconductor device with sub-mount |
JPH11251685A (ja) * | 1998-03-05 | 1999-09-17 | Toshiba Corp | 半導体レーザ |
JP2000058911A (ja) * | 1998-08-13 | 2000-02-25 | Toshiba Corp | 半導体発光装置 |
US20020117672A1 (en) * | 2001-02-23 | 2002-08-29 | Ming-Sung Chu | High-brightness blue-light emitting crystalline structure |
ATE525755T1 (de) * | 2001-10-12 | 2011-10-15 | Nichia Corp | Lichtemittierendes bauelement und verfahren zu seiner herstellung |
JP4590905B2 (ja) | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
JP2005277374A (ja) * | 2004-02-26 | 2005-10-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
JP2005259891A (ja) * | 2004-03-10 | 2005-09-22 | Toyoda Gosei Co Ltd | 発光装置 |
TWM255518U (en) * | 2004-04-23 | 2005-01-11 | Super Nova Optoelectronics Cor | Vertical electrode structure of Gallium Nitride based LED |
DE102004037868A1 (de) * | 2004-04-30 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes und/oder -empfangendes Halbleiterbauelement und Verfahren zur strukturierten Aufbringung eines Kontakts auf einen Halbleiterkörper |
WO2006038665A1 (ja) | 2004-10-01 | 2006-04-13 | Mitsubishi Cable Industries, Ltd. | 窒化物半導体発光素子およびその製造方法 |
KR100638666B1 (ko) * | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
WO2007029859A1 (en) * | 2005-09-08 | 2007-03-15 | Showa Denko K.K. | Electrode for semiconductor light emitting device |
JP2007073789A (ja) * | 2005-09-08 | 2007-03-22 | Showa Denko Kk | 半導体発光素子用電極 |
JP4954549B2 (ja) * | 2005-12-29 | 2012-06-20 | ローム株式会社 | 半導体発光素子およびその製法 |
KR101263934B1 (ko) | 2006-05-23 | 2013-05-10 | 엘지디스플레이 주식회사 | 발광다이오드 및 그의 제조방법 |
KR100765236B1 (ko) * | 2006-06-30 | 2007-10-09 | 서울옵토디바이스주식회사 | 패터닝된 발광다이오드용 기판 제조방법 및 그것을채택하는 발광 다이오드 제조방법 |
KR100809216B1 (ko) * | 2006-11-22 | 2008-02-29 | 삼성전기주식회사 | 수직구조 반도체 발광소자 제조방법 |
GB2447091B8 (en) * | 2007-03-02 | 2010-01-13 | Photonstar Led Ltd | Vertical light emitting diodes |
US9484499B2 (en) * | 2007-04-20 | 2016-11-01 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with carrier substrates |
WO2009004980A1 (ja) * | 2007-06-29 | 2009-01-08 | Showa Denko K.K. | 発光ダイオードの製造方法 |
WO2009010762A1 (en) * | 2007-07-19 | 2009-01-22 | Photonstar Led Limited | Vertical led with conductive vias |
JP4829190B2 (ja) * | 2007-08-22 | 2011-12-07 | 株式会社東芝 | 発光素子 |
-
2008
- 2008-04-05 KR KR1020080031909A patent/KR101449030B1/ko active IP Right Grant
-
2009
- 2009-04-06 EP EP09754967.9A patent/EP2264793B8/en active Active
- 2009-04-06 CN CN200980116966.9A patent/CN102047445B/zh not_active Expired - Fee Related
- 2009-04-06 CN CN201410136673.XA patent/CN104022204B/zh active Active
- 2009-04-06 US US12/936,298 patent/US8816370B2/en active Active
- 2009-04-06 WO PCT/KR2009/001764 patent/WO2009145502A2/ko active Application Filing
-
2014
- 2014-07-23 US US14/339,205 patent/US10224462B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060027815A1 (en) * | 2004-08-04 | 2006-02-09 | Wierer Jonathan J Jr | Photonic crystal light emitting device with multiple lattices |
US20060060874A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High efficiency group III nitride LED with lenticular surface |
WO2007089460A1 (en) * | 2006-01-30 | 2007-08-09 | Cree, Inc. | Improved external extraction light emitting diode based upon crystallographic faceted surfaces |
Also Published As
Publication number | Publication date |
---|---|
CN104022204B (zh) | 2017-08-25 |
US10224462B2 (en) | 2019-03-05 |
KR101449030B1 (ko) | 2014-10-08 |
CN102047445A (zh) | 2011-05-04 |
US20110024784A1 (en) | 2011-02-03 |
EP2264793A2 (en) | 2010-12-22 |
US20140332803A1 (en) | 2014-11-13 |
EP2264793B8 (en) | 2017-11-29 |
CN104022204A (zh) | 2014-09-03 |
US8816370B2 (en) | 2014-08-26 |
EP2264793A4 (en) | 2015-03-18 |
CN102047445B (zh) | 2014-05-07 |
KR20090106301A (ko) | 2009-10-08 |
WO2009145502A2 (ko) | 2009-12-03 |
EP2264793B1 (en) | 2017-08-16 |
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