WO2009004980A1 - 発光ダイオードの製造方法 - Google Patents

発光ダイオードの製造方法 Download PDF

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Publication number
WO2009004980A1
WO2009004980A1 PCT/JP2008/061654 JP2008061654W WO2009004980A1 WO 2009004980 A1 WO2009004980 A1 WO 2009004980A1 JP 2008061654 W JP2008061654 W JP 2008061654W WO 2009004980 A1 WO2009004980 A1 WO 2009004980A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
type semiconductor
layer
light emitting
type
Prior art date
Application number
PCT/JP2008/061654
Other languages
English (en)
French (fr)
Inventor
Takashi Hodota
Original Assignee
Showa Denko K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to US12/666,192 priority Critical patent/US8097478B2/en
Priority to JP2009521598A priority patent/JP5278317B2/ja
Publication of WO2009004980A1 publication Critical patent/WO2009004980A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

　本発明は、基板上に、ｎ型半導体層、発光層及びｐ型半導体層を順次積層して積層半導体層を形成するとともに、前記ｐ型半導体層上に複数の反射性ｐ型電極を形成する積層工程と、前記反射性ｐ型電極及び前記ｐ型半導体層を覆うようにシード層を形成し、前記シード層上にメッキ層を形成するメッキ工程と、前記ｎ型半導体層から前記基板を取り除いて、前記ｎ型半導体層の光取出面を露出させる除去工程と、前記ｎ型半導体層の前記光取出面に、前記ｎ型半導体層中のドーパント元素と同一の元素を含有するエッチングガスによるドライエッチングを施してから、前記光取出面にｎ型電極を形成する電極形成工程とを具備してなることを特徴とする発光ダイオードの製造方法を提供する。
PCT/JP2008/061654 2007-06-29 2008-06-26 発光ダイオードの製造方法 WO2009004980A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/666,192 US8097478B2 (en) 2007-06-29 2008-06-26 Method for producing light-emitting diode
JP2009521598A JP5278317B2 (ja) 2007-06-29 2008-06-26 発光ダイオードの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-171920 2007-06-29
JP2007171920 2007-06-29

Publications (1)

Publication Number Publication Date
WO2009004980A1 true WO2009004980A1 (ja) 2009-01-08

Family

ID=40226027

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061654 WO2009004980A1 (ja) 2007-06-29 2008-06-26 発光ダイオードの製造方法

Country Status (4)

Country Link
US (1) US8097478B2 (ja)
JP (1) JP5278317B2 (ja)
TW (1) TWI360896B (ja)
WO (1) WO2009004980A1 (ja)

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JP2011258746A (ja) * 2010-06-09 2011-12-22 Nichia Chem Ind Ltd 半導体発光素子の製造方法
EP2518782A1 (en) * 2009-02-10 2012-10-31 LG Innotek Co., Ltd. Light emitting device and light emitting device package
US8513679B2 (en) 2009-10-15 2013-08-20 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US9117971B2 (en) 2009-10-15 2015-08-25 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
KR101625725B1 (ko) 2011-03-22 2016-05-30 마이크론 테크놀로지, 인크 도금 지지 기판을 구비한 고상 광전자 소자

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Also Published As

Publication number Publication date
JPWO2009004980A1 (ja) 2010-08-26
TW200917528A (en) 2009-04-16
JP5278317B2 (ja) 2013-09-04
US20100203661A1 (en) 2010-08-12
TWI360896B (en) 2012-03-21
US8097478B2 (en) 2012-01-17

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