JP2005259832A - 窒化物系半導体発光素子 - Google Patents
窒化物系半導体発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 270
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 261
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- 238000002955 isolation Methods 0.000 description 20
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- 229910015363 Au—Sn Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
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- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
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- 229910052582 BN Inorganic materials 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
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- 239000007788 liquid Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- FOXXZZGDIAQPQI-XKNYDFJKSA-N Asp-Pro-Ser-Ser Chemical compound OC(=O)C[C@H](N)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(O)=O FOXXZZGDIAQPQI-XKNYDFJKSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- -1 thallium nitride Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
【解決手段】この窒化物系半導体発光素子は、導電性基板1上に形成されたp型窒化物系半導体各層(p型コンタクト層3、p型クラッド層4およびキャップ層5)と、キャップ層5上に形成された活性層6と、活性層6上に形成されたn型窒化物系半導体各層(n型クラッド層7およびn型コンタクト層8)と、n型コンタクト層8上に形成され、n型クラッド層7およびn型コンタクト層8のキャリア濃度(約5×1018cm−3)よりも低いキャリア濃度を有する光透過層9とを備えている。
【選択図】図1
Description
図1は、本発明の第1実施形態による窒化物系半導体発光ダイオード素子(窒化物系半導体発光素子)の構造を示した断面図である。まず、図1を参照して、第1実施形態による窒化物系半導体発光ダイオード素子の構造について説明する。
図8は、本発明の第2実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図8を参照して、この第2実施形態では、上記第1実施形態と異なり、光透過層として、アンドープのGaNからなる光透過層39を用いる場合について説明する。
図14は、本発明の第3実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図14を参照して、この第3実施形態では、上記第1および第2実施形態と異なり、光透過層として、アンドープのAlGaNからなる光透過層49を用いる場合について説明する。
図22は、本発明の第4実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図22を参照して、この第4実施形態では、上記第1〜第3実施形態と異なり、光透過層として、凹凸形状の表面を有する光透過層78を用いる場合について説明する。
図31は、本発明の第5実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図31を参照して、この第5実施形態では、上記第1〜第4実施形態と異なり、光透過層108上に、凹凸形状の表面を有する絶縁膜113を形成する場合について説明する。
図40は、本発明の第6実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図40を参照して、この第6実施形態では、上記第1〜第5実施形態と異なり、窒化物系半導体素子層の側面を傾斜させた場合について説明する。なお、図40の素子中の矢印は、光の経路を示している。
3、43、73、103、133 p型コンタクト層(第1窒化物系半導体層)
4、44、104 p型クラッド層(第1窒化物系半導体層)
5、45、74、105、134 キャップ層(第1窒化物系半導体層)
6、46、75、106、135 活性層
7、47、76、136 n型クラッド層(第2窒化物系半導体層)
8、48、77、107、137 n型コンタクト層(第2窒化物系半導体層)
9、39、49、78、108、138 光透過層
11、51、81、111、140 n側電極(電極層)
113 絶縁膜(窒化物系半導体以外の材料からなる層)
131 支持基板(導電性基板)
Claims (8)
- 導電性基板の表面上に形成された第1導電型の第1窒化物系半導体層と、
前記第1窒化物系半導体層上に形成された窒化物系半導体層からなる活性層と、
前記活性層上に形成された第2導電型の第2窒化物系半導体層と、
前記第2窒化物系半導体層上に形成され、前記第2窒化物系半導体層のキャリア濃度よりも低いキャリア濃度を有する窒化物系半導体層からなる光透過層とを備えた、窒化物系半導体発光素子。 - 前記第1導電型の第1窒化物系半導体層は、p型の窒化物系半導体層であり、
前記第2導電型の第2窒化物系半導体層は、n型の窒化物系半導体層である、請求項1に記載の窒化物系半導体発光素子。 - 前記光透過層は、アンドープの窒化物系半導体層を含む、請求項1または2に記載の窒化物系半導体発光素子。
- 前記光透過層は、少なくともAlを含む窒化物系半導体層を含む、請求項1〜3のいずれか1項に記載の窒化物系半導体発光素子。
- 前記光透過層は、凹凸形状の表面を有する、請求項1〜4のいずれか1項に記載の窒化物系半導体発光素子。
- 前記光透過層上に形成され、凹凸形状の表面を有するとともに、窒化物系半導体以外の材料からなる層をさらに備える、請求項1〜5のいずれか1項に記載の窒化物系半導体発光素子。
- 前記光透過層は、前記第2窒化物系半導体層と実質的に同じ材料からなる、請求項1〜6のいずれか1項に記載の窒化物系半導体発光素子。
- 前記光透過層は、前記第2窒化物系半導体層上の一部領域に形成されており、
前記第2窒化物系半導体層の表面の前記光透過層が形成されていない領域に接触するように形成された電極層をさらに備える、請求項1〜7のいずれか1項に記載の窒化物系半導体発光素子。
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JP2004066624A JP4368225B2 (ja) | 2004-03-10 | 2004-03-10 | 窒化物系半導体発光素子の製造方法 |
US11/060,484 US7154123B2 (en) | 2004-03-10 | 2005-02-18 | Nitride-based semiconductor light-emitting device |
CNB2005100084760A CN100485978C (zh) | 2004-03-10 | 2005-02-21 | 氮化物系半导体发光元件 |
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JP2004066624A JP4368225B2 (ja) | 2004-03-10 | 2004-03-10 | 窒化物系半導体発光素子の製造方法 |
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JP2008306188A Division JP2009060142A (ja) | 2008-12-01 | 2008-12-01 | 窒化物系半導体発光素子 |
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JP4368225B2 JP4368225B2 (ja) | 2009-11-18 |
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WO2007055202A1 (ja) * | 2005-11-08 | 2007-05-18 | Rohm Co., Ltd. | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
JP2007158334A (ja) * | 2005-12-06 | 2007-06-21 | Samsung Electro-Mechanics Co Ltd | 垂直構造の窒化ガリウム系led素子及びその製造方法 |
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Also Published As
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CN100485978C (zh) | 2009-05-06 |
CN1667847A (zh) | 2005-09-14 |
US7154123B2 (en) | 2006-12-26 |
JP4368225B2 (ja) | 2009-11-18 |
US20050199891A1 (en) | 2005-09-15 |
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