JP4368225B2 - 窒化物系半導体発光素子の製造方法 - Google Patents
窒化物系半導体発光素子の製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims description 256
- 238000004519 manufacturing process Methods 0.000 title claims description 72
- 238000000034 method Methods 0.000 title claims description 69
- 230000005540 biological transmission Effects 0.000 claims description 145
- 239000000758 substrate Substances 0.000 claims description 113
- 238000000926 separation method Methods 0.000 claims description 36
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- 229910015363 Au—Sn Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
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- FOXXZZGDIAQPQI-XKNYDFJKSA-N Asp-Pro-Ser-Ser Chemical compound OC(=O)C[C@H](N)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(O)=O FOXXZZGDIAQPQI-XKNYDFJKSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
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- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- -1 thallium nitride Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Description
図1は、本発明の第1参考形態による窒化物系半導体発光ダイオード素子(窒化物系半導体発光素子)の構造を示した断面図である。まず、図1を参照して、第1参考形態による窒化物系半導体発光ダイオード素子の構造について説明する。
図8は、本発明の第2実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図8を参照して、この第2実施形態では、上記第1参考形態と異なり、光透過層として、アンドープのGaNからなる光透過層39を用いる場合について説明する。
図14は、本発明の第3実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図14を参照して、この第3実施形態では、上記第1および第2実施形態と異なり、光透過層として、アンドープのAlGaNからなる光透過層49を用いる場合について説明する。
図22は、本発明の第4参考形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図22を参照して、この第4参考形態では、上記第1〜第3実施形態と異なり、光透過層として、凹凸形状の表面を有する光透過層78を用いる場合について説明する。
図31は、第5参考形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図31を参照して、この第5参考形態では、上記第1、第4参考形態および上記第2、第3実施形態と異なり、光透過層108上に、凹凸形状の表面を有する絶縁膜113を形成する場合について説明する。
図40は、本発明の第6参考形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図40を参照して、この第6参考形態では、上記第1〜第5参考形態と異なり、窒化物系半導体素子層の側面を傾斜させた場合について説明する。なお、図40の素子中の矢印は、光の経路を示している。
3、43、73、103、133 p型コンタクト層(第1窒化物系半導体層)
4、44、104 p型クラッド層(第1窒化物系半導体層)
5、45、74、105、134 キャップ層(第1窒化物系半導体層)
6、46、75、106、135 活性層
7、47、76、136 n型クラッド層(第2窒化物系半導体層)
8、48、77、107、137 n型コンタクト層(第2窒化物系半導体層)
9、39、49、78、108、138 光透過層
11、51、81、111、140 n側電極(電極層)
113 絶縁膜(窒化物系半導体以外の材料からなる層)
131 支持基板(導電性基板)
Claims (3)
- 導電性基板の表面上に形成された第1導電型の第1窒化物系半導体層と、
前記第1窒化物系半導体層上に形成された窒化物系半導体層からなる活性層と、前記活性層上に形成された第2導電型の第2窒化物系半導体層と、
前記第2窒化物系半導体層上に形成され、前記第2窒化物系半導体層のキャリア濃度よりも低いキャリア濃度を有するGaNまたはAlGaNからなる光透過層とを備えた窒化物系半導体素子層を有する、窒化物系半導体発光素子の製造方法であって、
成長用基板上に、バッファ層を形成する工程と、
前記バッファ層上に、InGaNからなる分離層を形成する工程と、
前記分離層上に前記光透過層、前記第2窒化物系半導体層、前記活性層、及び前記第1窒化物系半導体層をこの順に形成することで、前記窒化物系半導体素子層を形成する工程と、
前記窒化物系半導体素子層に、導電性基板を接合する工程と、
前記窒化物系半導体素子層に前記導電性基板が接合された状態で、前記分離層よりも上側の前記窒化物系半導体素子層と前記分離層よりも下側の前記バッファ層及び前記成長用基板を分離することで、前記窒化物系半導体素子層から前記バッファ層及び前記成長用基板を除去する工程とを備えた、窒化物系発光素子の製造方法。 - 前記光透過層の所定領域に、前記第2窒化物系半導体層の表面が露出するように開口部を形成し、前記開口部内に前記第2窒化物系半導体層と接触するように電極層を形成する工程をさらに備える、請求項1に記載の窒化物系発光素子の製造方法。
- 前記成長用基板上に前記窒化物系半導体素子層を形成する工程と、前記窒化物系半導体素子層に前記導電性基板を接合する工程との間に、
前記窒化物系半導体素子層の素子分離領域に溝部を形成する工程と、
前記溝部によって露出された前記窒化物系半導体素子層の側面を覆うように保護膜を形成する工程とを備えた、請求項1または2に記載の窒化物系発光素子の製造方法。
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JP2004066624A JP4368225B2 (ja) | 2004-03-10 | 2004-03-10 | 窒化物系半導体発光素子の製造方法 |
US11/060,484 US7154123B2 (en) | 2004-03-10 | 2005-02-18 | Nitride-based semiconductor light-emitting device |
CNB2005100084760A CN100485978C (zh) | 2004-03-10 | 2005-02-21 | 氮化物系半导体发光元件 |
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JP2004066624A JP4368225B2 (ja) | 2004-03-10 | 2004-03-10 | 窒化物系半導体発光素子の製造方法 |
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JP2008306188A Division JP2009060142A (ja) | 2008-12-01 | 2008-12-01 | 窒化物系半導体発光素子 |
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JP2005259832A JP2005259832A (ja) | 2005-09-22 |
JP4368225B2 true JP4368225B2 (ja) | 2009-11-18 |
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JP (1) | JP4368225B2 (ja) |
CN (1) | CN100485978C (ja) |
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US6720570B2 (en) * | 2002-04-17 | 2004-04-13 | Tekcore Co., Ltd. | Gallium nitride-based semiconductor light emitting device |
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US7154123B2 (en) | 2006-12-26 |
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JP2005259832A (ja) | 2005-09-22 |
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