JP4509217B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- JP4509217B2 JP4509217B2 JP2010019899A JP2010019899A JP4509217B2 JP 4509217 B2 JP4509217 B2 JP 4509217B2 JP 2010019899 A JP2010019899 A JP 2010019899A JP 2010019899 A JP2010019899 A JP 2010019899A JP 4509217 B2 JP4509217 B2 JP 4509217B2
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- 238000000034 method Methods 0.000 title claims description 53
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- 239000000758 substrate Substances 0.000 claims description 165
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- 229910000679 solder Inorganic materials 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 584
- 150000004767 nitrides Chemical class 0.000 description 178
- 230000005540 biological transmission Effects 0.000 description 61
- 229910004298 SiO 2 Inorganic materials 0.000 description 44
- 238000005253 cladding Methods 0.000 description 42
- 238000000605 extraction Methods 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 229910052594 sapphire Inorganic materials 0.000 description 20
- 239000010980 sapphire Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 15
- 238000002955 isolation Methods 0.000 description 14
- 239000010419 fine particle Substances 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 238000001771 vacuum deposition Methods 0.000 description 9
- 230000001154 acute effect Effects 0.000 description 8
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- 239000002019 doping agent Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910015363 Au—Sn Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
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- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
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- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- -1 thallium nitride Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Description
図1は、本発明の第1実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。まず、図1を参照して、第1実施形態による窒化物系半導体発光ダイオード素子の構造について説明する。なお、図1の素子中の矢印は、光の経路を示している。
図9は、本発明の第2参考形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図9を参照して、この第2参考形態では、上記第1実施形態と異なり、窒化物系半導体素子層の傾斜した側面と光出射面とがなす角度を鋭角にするとともに、窒化物系半導体素子層の傾斜した側面に側面反射膜を設ける場合について説明する。なお、図9の素子中の矢印は、光の経路を示している。
図19は、本発明の第3参考形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図19を参照して、この第3参考形態では、上記第1および第2参考形態と異なり、窒化物系半導体素子層の傾斜した側面と光出射面とがなす角度を鈍角にするとともに、光出射面を凹凸形状に形成する場合について説明する。なお、図19の素子中の矢印は、光の経路を示している。
図27は、本発明の第4参考形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図27を参照して、この第4参考形態では、上記第1実施形態、第2、第3参考形態と異なり、窒化物系半導体素子層の傾斜した側面と光出射面とがなす角度を鋭角にするとともに、窒化物系半導体素子層の傾斜した側面に側面反射膜を設け、かつ、光出射面を凹凸形状に形成する場合について説明する。なお、図27の素子中の矢印は、光の経路を示している。
2、52 p側電極(反射膜)
9、29、59、80 窒化物系半導体素子層(半導体素子層)
9a、29a、59a、80a 側面
11、31、61、83 光出射面
12 サファイア基板(成長用基板)
22 n側電極(反射膜、側面反射膜)
32 6H−SiC基板(成長用基板)
62 Si基板(成長用基板)
72 p側電極(反射膜、側面反射膜)
84 GaN基板(成長用基板)
Claims (5)
- 活性層を有する半導体素子層と、
前記活性層より生成された光を出射する光出射面とは反対側に設置された支持基板と、
前記半導体素子層の前記活性層よりも前記光出射面側の厚みが、前記活性層よりも前記支持基板側の厚みよりも大きい、発光素子の製造方法であって、
成長用基板上に、活性層を有する半導体素子層を形成する工程と、
前記半導体素子層の前記成長用基板とは反対側の面に反射膜を形成する工程と、
前記半導体素子層に、前記反射膜を介して支持基板を接合する工程と、
前記成長用基板を除去することにより、前記半導体素子層の前記成長用基板側の面を露出させて光出射面を形成する工程とを備え、
前記成長用基板を除去することにより光出射面を形成する工程の後に、
前記支持基板側から前記光出射面側に向かって先細り形状になるように前記光出射面に対して傾斜した側面を有するように、前記半導体素子層を加工する工程を備える、発光素子の製造方法。 - 前記半導体素子層を加工する工程の後に、前記反射膜及び前記支持基板を切断することにより、素子分離を行う工程を備える、請求項1に記載の発光素子の製造方法。
- 前記支持基板側から前記光出射面側に向かって先細り形状になるように前記光出射面に対して傾斜した側面を有するように、前記半導体素子層を加工する工程は、前記半導体素子層上に前記半導体素子層とは反対側に向かって先細り形状となる台形状のマスク層を形成する工程を備える、請求項1または2に記載の発光素子の製造方法。
- 前記光出射面の表面に凹凸形状を形成する工程をさらに備える、請求項1〜3のいずれか1項に記載の発光素子の製造方法。
- 前記半導体素子層に、前記反射膜を介して支持基板を接合する工程は、前記反射膜を半田または導電性ペーストを介して前記支持基板に接合することによって行う、請求項1〜4のいずれか1項に記載の発光素子の製造方法。
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JP2010019899A JP4509217B2 (ja) | 2010-02-01 | 2010-02-01 | 発光素子の製造方法 |
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JP2004065489A Division JP4868709B2 (ja) | 2004-03-09 | 2004-03-09 | 発光素子 |
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JP4509217B2 true JP4509217B2 (ja) | 2010-07-21 |
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Cited By (1)
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US11329204B2 (en) | 2018-12-24 | 2022-05-10 | Samsung Electronics Co., Ltd. | Micro light emitting diode and manufacturing method of micro light emitting diode |
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JP5077224B2 (ja) * | 2008-12-26 | 2012-11-21 | 豊田合成株式会社 | Iii族窒化物半導体発光素子、およびその製造方法 |
CN106252482B (zh) | 2011-05-25 | 2019-08-23 | 欧司朗光电半导体有限公司 | 光电子半导体芯片 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003532298A (ja) * | 2000-04-26 | 2003-10-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体素子 |
JP2003347589A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | Ledチップ |
JP2005079595A (ja) * | 2003-08-28 | 2005-03-24 | Lumileds Lighting Us Llc | 共振空洞発光デバイス |
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JP2003532298A (ja) * | 2000-04-26 | 2003-10-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体素子 |
JP2003347589A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | Ledチップ |
JP2005079595A (ja) * | 2003-08-28 | 2005-03-24 | Lumileds Lighting Us Llc | 共振空洞発光デバイス |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11329204B2 (en) | 2018-12-24 | 2022-05-10 | Samsung Electronics Co., Ltd. | Micro light emitting diode and manufacturing method of micro light emitting diode |
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