JP2007158334A - 垂直構造の窒化ガリウム系led素子及びその製造方法 - Google Patents
垂直構造の窒化ガリウム系led素子及びその製造方法 Download PDFInfo
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- JP2007158334A JP2007158334A JP2006323308A JP2006323308A JP2007158334A JP 2007158334 A JP2007158334 A JP 2007158334A JP 2006323308 A JP2006323308 A JP 2006323308A JP 2006323308 A JP2006323308 A JP 2006323308A JP 2007158334 A JP2007158334 A JP 2007158334A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 168
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 75
- 230000008569 process Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract
【解決手段】構造支持層207と、前記構造支持層上に形成されたp型電極206と、前記p型電極上に形成されたp型GaN層205と、前記p型GaN層上に形成された活性層204と、前記活性層上に形成されたn型電極コンタクト用n型GaN層203と、前記n型電極コンタクト用n型GaN層上に、前記n型電極コンタクト用n型GaN層の一部を露出させるように形成されたエッチング停止層300と、前記エッチング停止層により露出された前記n型電極コンタクト用n型GaN層上に形成されたn型透明電極208と、n型反射電極209と、n型電極210を備える。
【選択図】図5E
Description
201 アンドープのGaN層
202 低ドープのn型GaN層
203 n型電極コンタクト用n型GaN層
204 活性層
205 p型GaN層
206 p型電極
207 構造支持層
208 n型透明電極
209 n型反射電極
210 n型電極
300 エッチング停止層
Claims (11)
- 構造支持層と、
前記構造支持層上に形成されたp型電極と、
前記p型電極上に形成されたp型GaN層と、
前記p型GaN層上に形成された活性層と、
前記活性層上に形成されたn型電極コンタクト用n型GaN層と、
前記n型電極コンタクト用n型GaN層上に、前記n型電極コンタクト用n型GaN層の一部を露出させるように形成されたエッチング停止層と、
前記エッチング停止層により露出された前記n型電極コンタクト用n型GaN層上に形成されたn型電極と、を備える垂直構造の窒化ガリウム系LED素子。 - 前記エッチング停止層が、前記n型電極コンタクト用n型GaN層のエッチング比と互いに異なるエッチング比を有する物質からなることを特徴とする請求項1に記載の垂直構造の窒化ガリウム系LED素子。
- 前記エッチング停止層が、III−V,III−VI及びIII−VII族系の半導体化合物で構成された群の中から選択される少なくとも1つからなることを特徴とする請求項2に記載の垂直構造の窒化ガリウム系LED素子。
- 前記エッチング停止層の表面が、凹凸状を有することを特徴とする請求項1に記載の垂直構造の窒化ガリウム系LED素子。
- 前記エッチング停止層を備える前記n型電極コンタクト用n型GaN層と前記n型電極との間に順に形成されたn型透明電極及びn型反射電極をさらに備えることを特徴とする請求項1に記載の垂直構造の窒化ガリウム系LED素子。
- サファイア基板上にアンドープのGaN層、低ドープのn型GaN層、エッチング停止層、n型電極コンタクト用n型GaN層、活性層及びp型GaN層を順に形成するステップと、
前記p型GaN層上にp型電極を形成するステップと、
前記p型電極上に構造支持層を形成するステップと、
前記サファイア基板をLLO工程により除去するステップと、
前記サファイア基板が除去された前記アンドープのGaN層及び低ドープのn型GaN層をエッチングするステップと、
前記エッチング停止層を選択的にエッチングし、前記n型電極コンタクト用n型GaN層の少なくとも一部を露出させるステップと、
前記露出されたn型電極コンタクト用n型GaN層上にn型電極を形成するステップと、を含む垂直構造の窒化ガリウム系LED素子の製造方法。 - 前記低ドープのn型GaN層が、10−18E以下のドープ濃度を有することを特徴とする請求項6に記載の垂直構造の窒化ガリウム系LED素子の製造方法。
- 前記エッチング停止層が、前記低ドープのn型GaN層及び前記n型電極コンタクト用n型GaN層のエッチング比と互いに異なるエッチング比を有する物質から形成されることを特徴とする請求項6に記載の垂直構造の窒化ガリウム系LED素子の製造方法。
- 前記エッチング停止層が、III−V,III−VI及びIII−VII族系の半導体化合物で構成された群の中から選択される少なくとも1つを利用して形成されることを特徴とする請求項8に記載の垂直構造の窒化ガリウム系LED素子の製造方法。
- 前記エッチング停止層を選択的にエッチングし、前記n型電極コンタクト用n型GaN層の一部を露出させた後に、
前記エッチング後に残留されたエッチング停止層の表面を凹凸状に形成するステップをさらに含むことを特徴とする請求項6に記載の垂直構造の窒化ガリウム系LED素子の製造方法。 - 前記n型電極を形成する前に、
前記エッチング停止層を備える前記n型電極コンタクト用n型GaN層上に、n型透明電極及びn型反射電極を順に形成するステップをさらに含むことを特徴とする請求項6に記載の垂直構造の窒化ガリウム系LED素子の製造方法。
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KR10-2005-0117958 | 2005-12-06 | ||
KR1020050117958A KR100730072B1 (ko) | 2005-12-06 | 2005-12-06 | 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법 |
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Cited By (8)
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WO2009021416A1 (en) * | 2007-08-10 | 2009-02-19 | Hong Kong Applied Science & Technology Research Institute Co., Ltd | Vertical light emitting diode and method of making a vertical light emitting diode using a stop layer |
JP2009081407A (ja) * | 2007-09-27 | 2009-04-16 | Showa Denko Kk | 発光ダイオードの製造方法及び発光ダイオード、並びにランプ |
WO2009075973A3 (en) * | 2007-12-10 | 2009-08-13 | 3M Innovative Properties Co | Semiconductor light emitting device and method of making same |
WO2010108331A1 (en) * | 2009-03-27 | 2010-09-30 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Method of producing thin semiconductor structures |
US7985971B2 (en) | 2007-02-16 | 2011-07-26 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Method of producing thin semiconductor structures |
US8187900B2 (en) | 2007-08-10 | 2012-05-29 | Hong Kong Applied Science and Technology Research Institute Company Limited | Optimization of polishing stop design |
US8222064B2 (en) | 2007-08-10 | 2012-07-17 | Hong Kong Applied Science and Technology Research Institute Company Limited | Vertical light emitting diode device structure and method of fabricating the same |
US8884306B2 (en) | 2011-02-15 | 2014-11-11 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for manufacturing the same |
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US8187900B2 (en) | 2007-08-10 | 2012-05-29 | Hong Kong Applied Science and Technology Research Institute Company Limited | Optimization of polishing stop design |
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US20090181485A1 (en) | 2009-07-16 |
KR100730072B1 (ko) | 2007-06-20 |
KR20070059280A (ko) | 2007-06-12 |
US20070126022A1 (en) | 2007-06-07 |
JP4767157B2 (ja) | 2011-09-07 |
US7695989B2 (en) | 2010-04-13 |
US7573076B2 (en) | 2009-08-11 |
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