JP4939099B2 - 垂直構造3族窒化物発光素子の製造方法 - Google Patents
垂直構造3族窒化物発光素子の製造方法 Download PDFInfo
- Publication number
- JP4939099B2 JP4939099B2 JP2006109751A JP2006109751A JP4939099B2 JP 4939099 B2 JP4939099 B2 JP 4939099B2 JP 2006109751 A JP2006109751 A JP 2006109751A JP 2006109751 A JP2006109751 A JP 2006109751A JP 4939099 B2 JP4939099 B2 JP 4939099B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- doped
- light emitting
- emitting device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 150000004767 nitrides Chemical class 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000010410 layer Substances 0.000 claims description 235
- 239000000758 substrate Substances 0.000 claims description 64
- 239000004038 photonic crystal Substances 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 208000012868 Overgrowth Diseases 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 4
- 229910020220 Pb—Sn Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 230000007547 defect Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
Kenji Orita et al.の「High−Extraction−Efficiency Blue Light−Emitting Diode Using Extended−Pitch Photonic Crystal」、Japanese Journal of Applied Physics(応用物理学会論文)、Vol.43、No.8B、2004のpp.5809−5813 Daisuke Morita et al.著のJapanese Journal of Applied Physics(応用物理学会論文)、Vol.43、No.9A、2004のpp.5945−5950
105 p−ドープAlmGanIn(1−m−n)N層
107 活性層
110 n−ドープAlxGayIn(1−x−y)N層
121 凸凹パターン
123 n側電極
151 母基板
152 低温GaNバッファ層
153 アンドープGaN層
154 絶縁層
154a 絶縁層パターン
202 導電性接着層
Claims (14)
- 母基板上にアンドープGaN層および絶縁層を順次に形成する段階と、
上記絶縁層を選択的に蝕刻して上記アンドープGaN層上面のうち少なくとも一部が露出するように絶縁層パターンを形成する段階と、
上記絶縁層パターン上にn−ドープAlxGayIn(1−x−y)N層(0≦x≦1、0≦y≦1、0≦x+y≦1)、活性層及びp−ドープAlmGanIn(1−m−n)N層(0≦m≦1、0≦n≦1、0≦m+n≦1)を順次に形成する段階と、
上記p−ドープAlmGanIn(1−m−n)N層上に導電性基板を形成する段階と、
上記母基板を除去して、上記アンドープGaN層を露出させる段階と、
上記アンドープGaN層を除去して上記絶縁層パターンおよびn−ドープAlxGayIn(1−x−y)N層を露出させる段階と、
上記絶縁層パターンを除去して、上記n−ドープAlxGayIn(1−x−y)N層に形成された上記絶縁層パターンの陰刻形状を有する凸凹パターンを露出させる段階と、
上記n−ドープAlxGayIn(1−x−y)N層の露出面の一部領域上にn側電極を形成する段階と、を含み、
上記絶縁層パターンを形成する段階において、上記アンドープGaN層上面のうちn側電極に相応する領域には絶縁層パターンを形成せず、
上記n−ドープAl x Ga y In (1−x−y) N層に形成される凸凹パターンは、p h o t o n i c c r y s t a lを成すことを特徴とする垂直構造3族窒化物発光素子の製造方法。 - 上記絶縁層はシリコン酸化膜またはシリコン窒化膜からなることを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記n−ドープAlxGayIn(1−x−y)N層に形成された凸凹パターンを露出させる段階は、
レーザリフト−オフを利用して上記母基板を分離および除去する段階と、
乾式蝕刻または化学的機械的研磨を使用して上記アンドープGaN層を除去する段階及び
湿式蝕刻を使用して上記絶縁層パターンを除去する段階を含むことを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。 - 上記n−ドープAlxGayIn(1−x−y)N層は、エピタキシャル側方向過成長法でn−ドープAlxGayIn(1−x−y)Nを成長させることにより形成されることを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記アンドープGaN層を形成する前に、上記母基板上に低温GaNバッファ層を形成する段階をさらに含むことを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記導電性基板はシリコン基板または金属基板であることを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記導電性基板を形成する段階は、
予め導電性基板を準備した後、導電性接着層を利用して上記p−ドープAlmGanIn(1−m−n)N層上に上記導電性基板を接合する段階を含むことを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。 - 上記導電性接着層はAu、Au−Sn、Sn、In、Au−Ag及びPb−Snで構成されるグループから選択された物質からなることを特徴とする請求項7に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記p−ドープAlmGanIn(1−m−n)N層を形成する段階と上記導電性基板を形成する段階の間に、上記p−ドープAlmGanIn(1−m−n)N層上に反射層を形成する段階をさらに含むことを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記反射層はCuInO2/Ag層、CuInO2/Al層またはNi/Ag/Pt層で形成されることを特徴とする請求項9に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記n−ドープAlxGayIn(1−x−y)N層に形成された凸凹パターンを露出させた後、上記n−ドープAlxGayIn(1−x−y)N層上に透明電極層を形成する段階をさらに含むことを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記n−ドープAlxGayIn(1−x−y)N層に形成された凸凹パターンの間隔と幅そして高さは20nmないし100μmであることを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記n−ドープAlxGayIn(1−x−y)N層に形成された凸凹パターンの間隔と幅そして高さは200nmないし3μmであることを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
- 上記母基板はサファイア基板からなっていることを特徴とする請求項1に記載の垂直構造3族窒化物発光素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0031107 | 2005-04-14 | ||
KR1020050031107A KR100638730B1 (ko) | 2005-04-14 | 2005-04-14 | 수직구조 3족 질화물 발광 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006295188A JP2006295188A (ja) | 2006-10-26 |
JP4939099B2 true JP4939099B2 (ja) | 2012-05-23 |
Family
ID=37109020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006109751A Active JP4939099B2 (ja) | 2005-04-14 | 2006-04-12 | 垂直構造3族窒化物発光素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7485482B2 (ja) |
JP (1) | JP4939099B2 (ja) |
KR (1) | KR100638730B1 (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070012930A (ko) * | 2005-07-25 | 2007-01-30 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
EP1887634A3 (de) * | 2006-08-11 | 2011-09-07 | OSRAM Opto Semiconductors GmbH | Strahlungsemittierendes Halbleiterbauelement |
KR100820546B1 (ko) * | 2006-09-07 | 2008-04-07 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100826412B1 (ko) * | 2006-11-03 | 2008-04-29 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 제조방법 |
JP2008130799A (ja) * | 2006-11-21 | 2008-06-05 | Sharp Corp | 半導体発光素子および半導体発光素子の製造方法 |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
EP2003702A1 (en) * | 2007-06-13 | 2008-12-17 | High Power Optoelectronics Inc. | Semiconductor light emitting device and method of fabricating the same |
KR101289230B1 (ko) | 2007-07-23 | 2013-07-29 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR100921466B1 (ko) * | 2007-08-30 | 2009-10-13 | 엘지전자 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
KR100889568B1 (ko) * | 2007-09-14 | 2009-03-23 | 우리엘에스티 주식회사 | 질화물계 발광소자 및 그 제조방법 |
TW200926440A (en) * | 2007-12-12 | 2009-06-16 | Advanced Optoelectronic Tech | Light emitting diode and manufacturing method thereof |
KR100930187B1 (ko) * | 2008-02-05 | 2009-12-07 | 삼성전기주식회사 | 수직구조 반도체 발광소자 제조방법 |
KR100987358B1 (ko) | 2008-07-07 | 2010-10-13 | 고려대학교 산학협력단 | 포토닉 크리스탈 구조가 형성된 발광 소자 및 그 제조 방법 |
KR101064016B1 (ko) | 2008-11-26 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101047718B1 (ko) * | 2008-11-26 | 2011-07-08 | 엘지이노텍 주식회사 | 발광 소자 |
KR101040462B1 (ko) * | 2008-12-04 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101064082B1 (ko) * | 2009-01-21 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 |
TWI478372B (zh) * | 2009-03-20 | 2015-03-21 | Huga Optotech Inc | 具有中空結構之柱狀結構之發光元件及其形成方法 |
TWI408832B (zh) * | 2009-03-30 | 2013-09-11 | Huga Optotech Inc | 具有中空結構之柱狀結構之發光元件及其形成方法 |
JP2011029612A (ja) * | 2009-06-24 | 2011-02-10 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子 |
KR101081129B1 (ko) | 2009-11-30 | 2011-11-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
WO2011069242A1 (en) * | 2009-12-09 | 2011-06-16 | Cooledge Lighting Inc. | Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus |
US20110151588A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting, Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
KR100993077B1 (ko) | 2010-02-17 | 2010-11-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법, 발광소자 패키지 |
EP2381488A1 (en) * | 2010-04-22 | 2011-10-26 | Imec | Method of manufacturing a light emitting diode |
SG185547A1 (en) | 2010-05-18 | 2012-12-28 | Agency Science Tech & Res | Method of forming a light emitting diode structure and a light emitting diode structure |
CN102376830B (zh) * | 2010-08-19 | 2015-07-08 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
WO2013077619A1 (ko) * | 2011-11-21 | 2013-05-30 | 서울옵토디바이스주식회사 | 발광 다이오드 및 그 제조 방법 |
US8552457B1 (en) * | 2012-08-07 | 2013-10-08 | High Power Opto. Inc. | Thermal stress releasing structure of a light-emitting diode |
KR102518125B1 (ko) * | 2019-12-31 | 2023-04-04 | 충칭 콘카 포토일렉트릭 테크놀로지 리서치 인스티튜트 컴퍼니 리미티드 | 마이크로 발광다이오드 칩 및 이의 제조 방법, 표시 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3511970B2 (ja) * | 1995-06-15 | 2004-03-29 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP3316479B2 (ja) * | 1998-07-29 | 2002-08-19 | 三洋電機株式会社 | 半導体素子、半導体発光素子および半導体素子の製造方法 |
JP4196439B2 (ja) * | 1998-08-27 | 2008-12-17 | ソニー株式会社 | 半導体発光素子およびその製造方法 |
JP2002016312A (ja) | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子およびその製造方法 |
JP3782357B2 (ja) * | 2002-01-18 | 2006-06-07 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP4233268B2 (ja) * | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
JP2005038908A (ja) * | 2003-07-15 | 2005-02-10 | Sony Corp | 光電変換装置とその製造方法、並びに固体撮像素子 |
JP4427993B2 (ja) * | 2003-08-12 | 2010-03-10 | ソニー株式会社 | 半導体発光素子の製造方法 |
EP1681727A4 (en) * | 2003-11-04 | 2009-12-16 | Pioneer Corp | SEMICONDUCTOR LIGHT EMISSION ELEMENT AND METHOD FOR THE PRODUCTION THEREOF |
DE60341314C5 (de) * | 2003-12-09 | 2023-03-23 | The Regents Of The University Of California | Hocheffiziente leuchtdioden auf galliumnitridbasis mit oberflächenaufrauhung |
KR100631981B1 (ko) * | 2005-04-07 | 2006-10-11 | 삼성전기주식회사 | 수직구조 3족 질화물 발광 소자 및 그 제조 방법 |
-
2005
- 2005-04-14 KR KR1020050031107A patent/KR100638730B1/ko active IP Right Grant
-
2006
- 2006-04-11 US US11/401,329 patent/US7485482B2/en active Active
- 2006-04-12 JP JP2006109751A patent/JP4939099B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060108882A (ko) | 2006-10-18 |
JP2006295188A (ja) | 2006-10-26 |
US7485482B2 (en) | 2009-02-03 |
KR100638730B1 (ko) | 2006-10-30 |
US20060234408A1 (en) | 2006-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4939099B2 (ja) | 垂直構造3族窒化物発光素子の製造方法 | |
KR100631981B1 (ko) | 수직구조 3족 질화물 발광 소자 및 그 제조 방법 | |
JP4813282B2 (ja) | 垂直構造の窒化ガリウム系発光ダイオード素子 | |
US8361816B2 (en) | Method of manufacturing vertical gallium nitride based light emitting diode | |
JP5237570B2 (ja) | 垂直型発光素子製造方法 | |
JP5237286B2 (ja) | フォトニック結晶により定められたアレイ状エミッタを含む発光デバイス | |
US8507925B2 (en) | Optoelectronic device and method for manufacturing the same | |
KR101125025B1 (ko) | 발광소자 및 그 제조방법 | |
JP5270088B2 (ja) | 垂直型発光素子及びその製造方法 | |
US20080261403A1 (en) | Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate | |
US8278679B2 (en) | LED device with embedded top electrode | |
US20140145204A1 (en) | Light-emitting diode and method for preparing the same | |
TW201010050A (en) | Light-generating device and method for forming the same | |
JP2012114407A (ja) | 垂直型発光素子の製造方法およびその発光素子用の基板モジュール | |
TW200408140A (en) | GaN-based Ⅲ-Ⅴ group compound semiconductor light-emitting diode and the manufacturing method thereof | |
JP5306779B2 (ja) | 発光素子及びその製造方法 | |
JP2003347586A (ja) | 半導体発光素子 | |
KR101973855B1 (ko) | 마이크로 led 어레이의 제조 방법 | |
US20130187122A1 (en) | Photonic device having embedded nano-scale structures | |
TWI493747B (zh) | 發光二極體及其形成方法 | |
TW201034238A (en) | Semiconductor optoelectronic device with enhanced light extraction efficiency and fabricating method thereof | |
JP2007208244A (ja) | 窒化ガリウム系発光ダイオード素子の製造方法 | |
JP5165668B2 (ja) | 半導体発光素子及びその製造方法 | |
CN107591463B (zh) | 发光组件及发光组件的制造方法 | |
JP2011238884A (ja) | エピタキシャル成長用基板、GaN系半導体結晶の成長方法、半導体構造およびGaN系LED素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090512 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090812 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090817 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090908 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100402 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100831 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100930 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101021 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20101029 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110104 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110202 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20110422 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111227 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120224 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4939099 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
S633 | Written request for registration of reclamation of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313633 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |