JP5165668B2 - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- JP5165668B2 JP5165668B2 JP2009267908A JP2009267908A JP5165668B2 JP 5165668 B2 JP5165668 B2 JP 5165668B2 JP 2009267908 A JP2009267908 A JP 2009267908A JP 2009267908 A JP2009267908 A JP 2009267908A JP 5165668 B2 JP5165668 B2 JP 5165668B2
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- Prior art keywords
- semiconductor layer
- conductive
- layer
- emitting device
- light emitting
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- 239000004065 semiconductor Substances 0.000 title claims description 156
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 51
- 238000000605 extraction Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000004931 aggregating effect Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
102、202 活性層
103、203 第2導電型半導体層
104、204 第2電極
105 第1電極
110、210 絶縁性基板
130、230 導電性基板
140、240 マスク層
Claims (11)
- 第1導電型半導体層と、
前記第1導電型半導体層の上面に形成された活性層と、
前記活性層の上面に形成された第2導電型半導体層と、
前記第2導電型半導体層の上面に形成された第2電極とを含み、
前記第2導電型半導体層の上面には、半球形上部及び柱形状部を有する光抽出用パターンが形成され、前記第2電極は前記光抽出用パターンの上面に形成されていることを特徴とする半導体発光素子。 - 前記第1導電型半導体層の下面に形成された絶縁性基板と、
前記第2導電型半導体層及び前記活性層の一領域を除去したことによって露出した前記第1導電型半導体層上に形成された第1電極と
をさらに含むことを特徴とする請求項1に記載の半導体発光素子。 - 前記第1導電型半導体層の下面に形成された導電性基板をさらに含むことを特徴とする請求項1に記載の半導体発光素子。
- 基板上に、第1導電型半導体層、活性層及び第2導電型半導体層を積層する第1ステップと、
前記第2導電型半導体層の上面にマスク層を形成する第2ステップと、
前記マスク層を熱処理によって凝集させて、液滴形態の多数のマスクパターンを形成する第3ステップと、
前記マスクパターンが形成された面をドライエッチングして、前記第2導電型半導体層の上面に半球形上部及び柱形状部を有する光抽出用パターンを形成する第4ステップと、
前記第2導電型半導体層の上面に第2電極を形成する第5ステップとを含み、
前記第2電極は前記光抽出用パターンの上面に形成されていることを特徴とする半導体発光素子の製造方法。 - 前記マスク層は、Ni、Ag、Ti、Pt及びAuからなるグループから選択された一つ以上の金属を含むことを特徴とする請求項4に記載の半導体発光素子の製造方法。
- 前記マスク層は、ITO、ZnO、SiO2及びTCOからなるグループから選択された酸化膜であることを特徴とする請求項4に記載の半導体発光素子の製造方法。
- 前記マスク層は、1000Å乃至2000Åの厚さに蒸着されることを特徴とする請求項4乃至請求項6のいずれか1項に記載の半導体発光素子の製造方法。
- 前記熱処理は、500℃乃至800℃の温度で行われることを特徴とする請求項4乃至請求項7のいずれか1項に記載の半導体発光素子の製造方法。
- 前記液滴形態の多数のマスクパターンの間隔は、約0.05μm乃至0.15μmであることを特徴とする請求項4乃至請求項8のいずれか1項に記載の半導体発光素子の製造方法。
- 前記第4ステップの後に、前記第2導電型半導体層及び前記活性層の一領域をエッチングして前記第1導電型半導体層を露出させ、露出した領域上に第1電極を形成するステップをさらに含むことを特徴とする請求項4乃至請求項9のいずれか1項に記載の半導体発光素子の製造方法。
- 前記第1ステップにおいて、絶縁性基板に前記第2導電型半導体層、前記活性層及び前記第1導電型半導体層を順次成長させ、前記第1導電型半導体層に導電性基板を配置した後に前記絶縁性基板を取り除くことを特徴とする請求項4乃至請求項9のいずれか1項に記載の半導体発光素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080122085A KR101518858B1 (ko) | 2008-12-03 | 2008-12-03 | 반도체 발광소자 및 그 제조방법 |
KR10-2008-0122085 | 2008-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010135786A JP2010135786A (ja) | 2010-06-17 |
JP5165668B2 true JP5165668B2 (ja) | 2013-03-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009267908A Expired - Fee Related JP5165668B2 (ja) | 2008-12-03 | 2009-11-25 | 半導体発光素子及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8664020B2 (ja) |
JP (1) | JP5165668B2 (ja) |
KR (1) | KR101518858B1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101712094B1 (ko) * | 2009-11-27 | 2017-03-03 | 포항공과대학교 산학협력단 | 질화물갈륨계 수직 발광다이오드 및 그 제조 방법 |
EP2588860A4 (en) * | 2010-06-30 | 2017-01-25 | ANPAC Bio-Medical Science Co., Ltd. | Apparatus for disease detection |
JP5803708B2 (ja) * | 2012-02-03 | 2015-11-04 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
KR20140100115A (ko) * | 2013-02-05 | 2014-08-14 | 삼성전자주식회사 | 반도체 발광 소자 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US5561079A (en) * | 1994-12-16 | 1996-10-01 | General Motors Corporation | Stalagraphy |
JP2002286906A (ja) * | 2001-03-23 | 2002-10-03 | Mitsubishi Chemicals Corp | 反射防止方法及び反射防止構造並びに反射防止構造を有する反射防止構造体及びその製造方法 |
US7102175B2 (en) | 2003-04-15 | 2006-09-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and method for fabricating the same |
JP4572604B2 (ja) | 2003-06-30 | 2010-11-04 | 日亜化学工業株式会社 | 半導体発光素子及びそれを用いた発光装置 |
KR100576854B1 (ko) * | 2003-12-20 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 제조 방법과 이를 이용한 질화물 반도체 |
JP2007059518A (ja) | 2005-08-23 | 2007-03-08 | Showa Denko Kk | 半導体発光素子 |
JP2007103891A (ja) | 2005-09-06 | 2007-04-19 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
WO2007029842A1 (en) | 2005-09-06 | 2007-03-15 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and production method thereof |
JP2007165612A (ja) * | 2005-12-14 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP5318353B2 (ja) | 2007-02-14 | 2013-10-16 | 三菱化学株式会社 | GaN系LED素子および発光装置 |
-
2008
- 2008-12-03 KR KR1020080122085A patent/KR101518858B1/ko active IP Right Grant
-
2009
- 2009-11-18 US US12/620,928 patent/US8664020B2/en not_active Expired - Fee Related
- 2009-11-25 JP JP2009267908A patent/JP5165668B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8664020B2 (en) | 2014-03-04 |
KR101518858B1 (ko) | 2015-05-13 |
KR20100063528A (ko) | 2010-06-11 |
US20100133570A1 (en) | 2010-06-03 |
JP2010135786A (ja) | 2010-06-17 |
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