JP5237286B2 - フォトニック結晶により定められたアレイ状エミッタを含む発光デバイス - Google Patents
フォトニック結晶により定められたアレイ状エミッタを含む発光デバイス Download PDFInfo
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- 239000004038 photonic crystal Substances 0.000 title claims description 88
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
22 非導電性領域
24 n−型領域
25 n−コンタクト
26 フォトニック結晶孔
28 発光領域
32 成長基板
34 n−型領域
36 マスク
38 マスク開口部
41 導電性酸化物
44 ホスト基板
45 ボンディング層
50 p−コンタクト
51 導電層
52 n−コンタクト
53、55 誘電体層
57 p−相互接続部
58 n−相互接続部
60 導電性ビア
62 マウント
64 p−ボンディング・パッド
65 n−ボンディング・パッド
66、67 導電性ビア
71 非導電性領域
72 p−型領域
73 発光領域
74 n−型領域
76 孔
77 エミッタ区域
80 ビア
82 マスク層
Claims (37)
- n−型領域とp−型領域との間に配置された発光領域を含む構造体と、前記構造体の下面の少なくとも一部分上に配置された反射器と、を備えたデバイスであって、
前記構造体内には複数の孔が、前記発光領域の第1の部分に対応する前記構造体の第1の領域内に形成され、
前記構造体の複数の第2の領域には孔がなく、第2の領域の各々が、前記発光領域の第2の部分に対応し、前記第1の領域に囲まれており、
前記デバイスは、順方向バイアスがかけられたとき、前記第2の領域内に電流が注入され、前記第1の領域には実質的に電流がないように構成され、
前記第1の領域の前記複数の孔が非導電性材料内に設けられていることを特徴とするデバイス。 - 前記構造体から抽出される光の大部分は、前記第1の領域から放出されることを特徴とする、請求項1に記載のデバイス。
- 前記構造体から抽出される光の大部分は、前記複数の第2の領域から放出されることを特徴とする、請求項1に記載のデバイス。
- 前記構造体から抽出される光は、前記第1の領域及び前記複数の第2の領域の両方から放出されることを特徴とする、請求項1に記載のデバイス。
- 前記構造体から抽出される光の大部分は、前記構造体の上面を通して抽出されることを特徴とする、請求項1に記載のデバイス。
- 前記複数の孔は、周期的な屈折率の変化を含むフォトニック結晶を形成することを特徴とする、請求項1に記載のデバイス。
- 前記構造体の前記第1の領域は、非導電層を含むことを特徴とする、請求項1に記載のデバイス。
- 前記非導電層は、打込み層又は酸化物層を含むことを特徴とする、請求項7に記載のデバイス。
- 前記構造体は、III族窒化物半導体構造体を含むことを特徴とする、請求項1に記載のデバイス。
- 前記孔は、発光領域内に延びることを特徴とする、請求項1に記載のデバイス。
- 前記孔は、前記n−型領域内に延びることを特徴とする、請求項1に記載のデバイス。
- 前記孔は、前記p−型領域内に延びることを特徴とする、請求項1に記載のデバイス。
- 前記孔は、前記構造体の全厚を通して延びることを特徴とする、請求項1に記載のデバイス。
- 前記孔への開口部は前記構造体の上面内に配置され、前記孔は前記構造体の下面に向けて延びることを特徴とする、請求項1に記載のデバイス。
- 前記孔への開口部は前記構造体の下面内に配置され、前記孔は前記構造体の上面に向けて延びることを特徴とする、請求項1に記載のデバイス。
- 前記反射器は銀を含むことを特徴とする、請求項1に記載のデバイス。
- 前記反射器は、前記p−型領域に電気的に接続された第1のコンタクトであり、前記デバイスは、前記構造体の上面に近接した前記n−型領域に電気的に接続された第2のコンタクトをさらに含むことを特徴とする、請求項1に記載のデバイス。
- 前記第1のコンタクト及び前記第2のコンタクトの一方と前記構造体との間に配置された導電性酸化物をさらに含むことを特徴とする、請求項17に記載のデバイス。
- 前記導電性酸化物は、インジウム・スズ酸化物、InO:Ga、及びZnO:Gaの1つであることを特徴とする、請求項18に記載のデバイス。
- 前記反射器は、前記p−型領域に電気的に接続された第1のコンタクトであり、前記デバイスは、前記n−型領域に電気的に接続された第2のコンタクトをさらに含み、前記第2のコンタクトは、前記構造体の前記下面に形成されたビア内に配置されることを特徴とする、請求項1に記載のデバイス。
- 前記複数の孔は、前記構造体の前記下面に近接して配置されることを特徴とする、請求項20に記載のデバイス。
- 前記複数の孔は、前記構造体の上面に近接して配置されることを特徴とする、請求項20に記載のデバイス。
- 前記第2の領域の少なくとも1つは、0.15μmから3μmまでの間の横方向の範囲を有することを特徴とする、請求項1に記載のデバイス。
- 前記複数の第2の領域の各々は、最も近い隣接する第2の領域から、0.3μmから10μmまでの間だけ離間配置されていることを特徴とする、請求項1に記載のデバイス。
- 前記構造体の最大厚は、500nm未満であることを特徴とする、請求項1に記載のデバイス。
- 前記複数の孔は、200nmから500nmまでの間の格子定数を有する格子内に形成されることを特徴とする、請求項1に記載のデバイス。
- 前記複数の孔は、三角格子、正方格子、六方格子、ハニカム格子、準結晶格子のうちの1つの格子内に形成されることを特徴とする、請求項1に記載のデバイス。
- 前記複数の孔は、ある格子定数を有する格子内に形成され、少なくとも1つの孔の半径と前記格子定数の比率は、0.2から0.45までの間の範囲であることを特徴とする、請求項1に記載のデバイス。
- 前記n−型領域及び前記p−型領域に電気的に接続されたリード線と、前記構造体の上に配置されたカバーとをさらに含むことを特徴とする、請求項1に記載のデバイス。
- 前記構造体から抽出された光路内に配置された波長変換材料をさらに含むことを特徴とする、請求項1に記載のデバイス。
- 順方向バイアスがかけられたとき、前記発光領域は第1の波長の光を放出し、前記波長変換材料は、前記第1の波長の光の少なくとも一部分を吸収し、かつ、少なくとも1つの第2の波長の光を放出するように構成され、前記第1の波長の光及び前記第2の波長の光を含む複合光が白色に見えることを特徴とする、請求項30に記載のデバイス。
- 順方向バイアスがかけられたとき、前記発光領域は第1の波長の光を放出し、前記波長変換材料は、前記第1の波長の光の少なくとも一部分を吸収し、かつ、第2の波長の光を放出するように構成され、前記波長変換材料を通過した後、前記デバイスから逃れる光は、前記第2の波長の色に見えることを特徴とする、請求項30に記載のデバイス。
- 前記第2の波長は、赤色、緑色、及び青色であることを特徴とする、請求項32に記載のデバイス。
- 前記n−型領域に電気的に接続された第1のコンタクトと、前記p−型領域に電気的に接続された第2のコンタクトとをさらに含み、前記第1のコンタクト及び前記第2のコンタクトは、順方向バイアスがかけられたとき、前記第2の領域の各々に電流が注入されるように構成されることを特徴とする、請求項1に記載のデバイス。
- 前記前記構造体のn−型領域上の上面に形成されたn−コンタクトと、
前記n−コンタクトと前記反射器との間に配置された非導電性材料を有する請求項1に記載のデバイス。 - 前記非導電性材料は、前記p−型領域に隣接している請求項1に記載のデバイス。
- 前記非導電性材料は、前記反射器と前記発光領域との間に配置されている請求項1に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/537,940 | 2006-10-02 | ||
US11/537,940 US7697584B2 (en) | 2006-10-02 | 2006-10-02 | Light emitting device including arrayed emitters defined by a photonic crystal |
PCT/IB2007/053937 WO2008041161A2 (en) | 2006-10-02 | 2007-09-27 | Light emitting device including arrayed emitters defined by a photonic crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010506382A JP2010506382A (ja) | 2010-02-25 |
JP5237286B2 true JP5237286B2 (ja) | 2013-07-17 |
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US (1) | US7697584B2 (ja) |
EP (1) | EP2074669B1 (ja) |
JP (1) | JP5237286B2 (ja) |
CN (1) | CN101523623B (ja) |
BR (1) | BRPI0719765A8 (ja) |
TW (1) | TWI453942B (ja) |
WO (1) | WO2008041161A2 (ja) |
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DE102008038852B4 (de) | 2008-06-03 | 2024-02-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
DE102008030584A1 (de) * | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
US7919780B2 (en) * | 2008-08-05 | 2011-04-05 | Dicon Fiberoptics, Inc. | System for high efficiency solid-state light emissions and method of manufacture |
US20100123386A1 (en) | 2008-11-13 | 2010-05-20 | Maven Optronics Corp. | Phosphor-Coated Light Extraction Structures for Phosphor-Converted Light Emitting Devices |
KR101064016B1 (ko) * | 2008-11-26 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
EP2317542B1 (en) * | 2009-10-30 | 2018-05-23 | IMEC vzw | Semiconductor device and method of manufacturing thereof |
KR20120034910A (ko) * | 2010-10-04 | 2012-04-13 | 삼성엘이디 주식회사 | 반도체 발광소자 및 이의 제조방법 |
CN102468418B (zh) * | 2010-11-18 | 2015-04-29 | 展晶科技(深圳)有限公司 | 垂直结构发光二极管芯片及其制造方法 |
JP5822543B2 (ja) * | 2011-06-06 | 2015-11-24 | キヤノン株式会社 | 発光素子 |
EP2733752B1 (en) | 2011-07-12 | 2016-10-05 | Marubun Corporation | Light emitting element and method for manufacturing the same |
TWI563686B (en) * | 2012-12-21 | 2016-12-21 | Hon Hai Prec Ind Co Ltd | Led chip and method manufacturing the same |
US10866343B2 (en) * | 2013-04-17 | 2020-12-15 | Japan Science And Technology Agency | Photonic crystal and optical functional device including the same |
US9929311B2 (en) | 2013-07-17 | 2018-03-27 | Marubun Corporation | Semiconductor light emitting element and method for producing the same |
JP5757512B1 (ja) * | 2014-03-06 | 2015-07-29 | 丸文株式会社 | 深紫外led及びその製造方法 |
CN107210336B (zh) * | 2015-01-16 | 2019-05-10 | 丸文株式会社 | 深紫外led及其制造方法 |
US10680134B2 (en) | 2015-09-03 | 2020-06-09 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
US10056526B2 (en) | 2016-03-30 | 2018-08-21 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
CN106505076B (zh) * | 2016-11-09 | 2018-07-31 | 太原理工大学 | 微米阵列led制备方法 |
FR3059828B1 (fr) * | 2016-12-02 | 2019-05-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a diode electroluminescente a extraction augmentee |
CN110770986A (zh) * | 2017-04-05 | 2020-02-07 | 维克萨股份有限公司 | 显示器的vcsel的新型图案化、感测和成像 |
US11309454B2 (en) | 2018-01-26 | 2022-04-19 | Marubun Corporation | Deep ultraviolet LED and method for producing the same |
CN109994578B (zh) * | 2019-01-09 | 2020-12-11 | 南京邮电大学 | 垂直结构蓝光发光二极管及其制备方法 |
CN109841714B (zh) * | 2019-01-09 | 2020-12-11 | 南京邮电大学 | 垂直结构近紫外发光二极管及其制备方法 |
JP2021150373A (ja) * | 2020-03-17 | 2021-09-27 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
DE102021214311A1 (de) | 2021-12-14 | 2023-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Oberflächenemittierender photonischer-kristall-laser, optoelektronisches system und verfahren zur herstellung eines oberflächenemittierenden photonischer-kristall-lasers |
DE102022101575A1 (de) | 2022-01-24 | 2023-07-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer vielzahl optoelektronischer halbleiterchips und optoelektronischer halbleiterchip |
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US7279718B2 (en) * | 2002-01-28 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | LED including photonic crystal structure |
US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
US6831302B2 (en) * | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
US7098589B2 (en) * | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
US7012279B2 (en) | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US20050152417A1 (en) * | 2004-01-08 | 2005-07-14 | Chung-Hsiang Lin | Light emitting device with an omnidirectional photonic crystal |
US20050173714A1 (en) * | 2004-02-06 | 2005-08-11 | Ho-Shang Lee | Lighting system with high and improved extraction efficiency |
CN101032034A (zh) * | 2004-06-30 | 2007-09-05 | 克里公司 | 用于封装发光器件的芯片级方法和芯片级封装的发光器件 |
US7442964B2 (en) * | 2004-08-04 | 2008-10-28 | Philips Lumileds Lighting Company, Llc | Photonic crystal light emitting device with multiple lattices |
JP4594814B2 (ja) * | 2004-10-25 | 2010-12-08 | 株式会社リコー | フォトニック結晶レーザ、フォトニック結晶レーザの製造方法、面発光レーザアレイ、光伝送システム、及び書き込みシステム |
JP2006179573A (ja) * | 2004-12-21 | 2006-07-06 | Sumitomo Electric Ind Ltd | 半導体レーザ素子およびその製造方法 |
US7285791B2 (en) * | 2006-03-24 | 2007-10-23 | Goldeneye, Inc. | Wavelength conversion chip for use in solid-state lighting and method for making same |
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2006
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2007
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- 2007-09-27 JP JP2009529840A patent/JP5237286B2/ja active Active
- 2007-09-27 CN CN200780036900XA patent/CN101523623B/zh active Active
- 2007-09-27 BR BRPI0719765A patent/BRPI0719765A8/pt not_active Application Discontinuation
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BRPI0719765A2 (pt) | 2014-01-28 |
WO2008041161A2 (en) | 2008-04-10 |
WO2008041161A3 (en) | 2008-07-03 |
CN101523623A (zh) | 2009-09-02 |
BRPI0719765A8 (pt) | 2015-10-06 |
EP2074669B1 (en) | 2017-11-15 |
TWI453942B (zh) | 2014-09-21 |
US20080080581A1 (en) | 2008-04-03 |
EP2074669A2 (en) | 2009-07-01 |
CN101523623B (zh) | 2011-09-07 |
TW200836372A (en) | 2008-09-01 |
JP2010506382A (ja) | 2010-02-25 |
US7697584B2 (en) | 2010-04-13 |
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