WO2008041161A3 - Light emitting device including arrayed emitters defined by a photonic crystal - Google Patents

Light emitting device including arrayed emitters defined by a photonic crystal Download PDF

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Publication number
WO2008041161A3
WO2008041161A3 PCT/IB2007/053937 IB2007053937W WO2008041161A3 WO 2008041161 A3 WO2008041161 A3 WO 2008041161A3 IB 2007053937 W IB2007053937 W IB 2007053937W WO 2008041161 A3 WO2008041161 A3 WO 2008041161A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
region
photonic crystal
emitting device
device including
Prior art date
Application number
PCT/IB2007/053937
Other languages
French (fr)
Other versions
WO2008041161A2 (en
Inventor
Jonathan Wierer Jr
Mihail M Sigalas
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lighting Co
Jonathan Wierer Jr
Mihail M Sigalas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lighting Co, Jonathan Wierer Jr, Mihail M Sigalas filed Critical Koninkl Philips Electronics Nv
Priority to BRPI0719765A priority Critical patent/BRPI0719765A8/en
Priority to CN200780036900XA priority patent/CN101523623B/en
Priority to EP07826571.7A priority patent/EP2074669B1/en
Priority to JP2009529840A priority patent/JP5237286B2/en
Publication of WO2008041161A2 publication Critical patent/WO2008041161A2/en
Publication of WO2008041161A3 publication Critical patent/WO2008041161A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A light emitting device includes a structure with a light emitting region disposed between an n-type region and a p-type region. A plurality of holes in the structure, which form a photonic crystal, are formed in a first region of the structure corresponding to a first portion of the light emitting region. A second region of the structure corresponding to a second portion of the light emitting region is free of holes. The device is configured such that when forward biased, current is injected in the second region and the first region is substantially free of current.
PCT/IB2007/053937 2006-10-02 2007-09-27 Light emitting device including arrayed emitters defined by a photonic crystal WO2008041161A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
BRPI0719765A BRPI0719765A8 (en) 2006-10-02 2007-09-27 DEVICE
CN200780036900XA CN101523623B (en) 2006-10-02 2007-09-27 Light emitting device including arrayed emitters defined by a photonic crystal
EP07826571.7A EP2074669B1 (en) 2006-10-02 2007-09-27 Semiconductor light emitting device including arrayed emitters defined by a photonic crystal
JP2009529840A JP5237286B2 (en) 2006-10-02 2007-09-27 Light emitting device comprising an array of emitters defined by a photonic crystal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/537,940 2006-10-02
US11/537,940 US7697584B2 (en) 2006-10-02 2006-10-02 Light emitting device including arrayed emitters defined by a photonic crystal

Publications (2)

Publication Number Publication Date
WO2008041161A2 WO2008041161A2 (en) 2008-04-10
WO2008041161A3 true WO2008041161A3 (en) 2008-07-03

Family

ID=39156124

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/053937 WO2008041161A2 (en) 2006-10-02 2007-09-27 Light emitting device including arrayed emitters defined by a photonic crystal

Country Status (7)

Country Link
US (1) US7697584B2 (en)
EP (1) EP2074669B1 (en)
JP (1) JP5237286B2 (en)
CN (1) CN101523623B (en)
BR (1) BRPI0719765A8 (en)
TW (1) TWI453942B (en)
WO (1) WO2008041161A2 (en)

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DE102008038852B4 (en) 2008-06-03 2024-02-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for producing an optoelectronic component and optoelectronic component
DE102008030584A1 (en) * 2008-06-27 2009-12-31 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component and optoelectronic component
US7919780B2 (en) * 2008-08-05 2011-04-05 Dicon Fiberoptics, Inc. System for high efficiency solid-state light emissions and method of manufacture
US20100123386A1 (en) 2008-11-13 2010-05-20 Maven Optronics Corp. Phosphor-Coated Light Extraction Structures for Phosphor-Converted Light Emitting Devices
KR101064016B1 (en) * 2008-11-26 2011-09-08 엘지이노텍 주식회사 Light emitting device and manufacturing method
EP2317542B1 (en) 2009-10-30 2018-05-23 IMEC vzw Semiconductor device and method of manufacturing thereof
KR20120034910A (en) * 2010-10-04 2012-04-13 삼성엘이디 주식회사 Semiconductor light emitting device and preparing therof
CN102468418B (en) * 2010-11-18 2015-04-29 展晶科技(深圳)有限公司 Vertical-structure LED (Light Emitting Diode) chip and manufacturing method thereof
JP5822543B2 (en) * 2011-06-06 2015-11-24 キヤノン株式会社 Light emitting element
WO2013008556A1 (en) 2011-07-12 2013-01-17 丸文株式会社 Light emitting element and method for manufacturing same
TWI563686B (en) * 2012-12-21 2016-12-21 Hon Hai Prec Ind Co Ltd Led chip and method manufacturing the same
WO2014171457A1 (en) * 2013-04-17 2014-10-23 独立行政法人科学技術振興機構 Photonic crystal and optical function device using same
CN105283968A (en) 2013-07-17 2016-01-27 丸文株式会社 Semiconductor light-emitting element and production method
CN105934833B (en) * 2014-03-06 2017-09-15 丸文株式会社 Deep ultraviolet LED and its manufacture method
JP5999800B1 (en) * 2015-01-16 2016-09-28 丸文株式会社 Deep ultraviolet LED and manufacturing method thereof
EP3346509B1 (en) 2015-09-03 2021-06-30 Marubun Corporation Deep-ultraviolet led and method for manufacturing same
CN107534072B (en) 2016-03-30 2019-04-19 丸文株式会社 Deep ultraviolet LED and its manufacturing method
CN106505076B (en) * 2016-11-09 2018-07-31 太原理工大学 Micrometre array LED preparation methods
FR3059828B1 (en) * 2016-12-02 2019-05-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives OPTICAL ELECTROLUMINESCENT DIODE DEVICE WITH INCREASED EXTRACTION
CN110770986A (en) * 2017-04-05 2020-02-07 维克萨股份有限公司 Novel patterning, sensing and imaging of VCSELs for displays
WO2019146737A1 (en) 2018-01-26 2019-08-01 丸文株式会社 Deep ultraviolet led and production method for same
CN109994578B (en) * 2019-01-09 2020-12-11 南京邮电大学 Blue light-emitting diode with vertical structure and preparation method thereof
CN109841714B (en) * 2019-01-09 2020-12-11 南京邮电大学 Vertical structure near ultraviolet light-emitting diode and preparation method thereof
JP2021150373A (en) * 2020-03-17 2021-09-27 セイコーエプソン株式会社 Light emitting device, projector, and display
DE102021214311A1 (en) 2021-12-14 2023-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung SURFACE EMITTING PHOTONIC CRYSTAL LASER, OPTOELECTRONIC SYSTEM AND METHOD FOR MANUFACTURING A SURFACE EMITTING PHOTONIC CRYSTAL LASER
DE102022101575A1 (en) 2022-01-24 2023-07-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung PROCESS FOR MANUFACTURING A VARIETY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS AND OPTOELECTRONIC SEMICONDUCTOR CHIP

Citations (5)

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Publication number Priority date Publication date Assignee Title
US20030141507A1 (en) * 2002-01-28 2003-07-31 Krames Michael R. LED efficiency using photonic crystal structure
US20040206972A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting device
EP1526583A2 (en) * 2003-10-21 2005-04-27 LumiLeds Lighting U.S., LLC Photonic crystal light emitting device
US20050151145A1 (en) * 2004-01-08 2005-07-14 Chung-Hsiang Lin Light emitting device with a photonic crystal
US20050173714A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency

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US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
KR101193740B1 (en) * 2004-06-30 2012-10-22 크리 인코포레이티드 Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US7442964B2 (en) * 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
JP4594814B2 (en) * 2004-10-25 2010-12-08 株式会社リコー Photonic crystal laser, photonic crystal laser manufacturing method, surface emitting laser array, optical transmission system, and writing system
JP2006179573A (en) * 2004-12-21 2006-07-06 Sumitomo Electric Ind Ltd Semiconductor laser device and its manufacturing method
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030141507A1 (en) * 2002-01-28 2003-07-31 Krames Michael R. LED efficiency using photonic crystal structure
US20040206972A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting device
EP1526583A2 (en) * 2003-10-21 2005-04-27 LumiLeds Lighting U.S., LLC Photonic crystal light emitting device
US20050151145A1 (en) * 2004-01-08 2005-07-14 Chung-Hsiang Lin Light emitting device with a photonic crystal
US20050173714A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency

Also Published As

Publication number Publication date
WO2008041161A2 (en) 2008-04-10
EP2074669A2 (en) 2009-07-01
JP5237286B2 (en) 2013-07-17
EP2074669B1 (en) 2017-11-15
US7697584B2 (en) 2010-04-13
JP2010506382A (en) 2010-02-25
TWI453942B (en) 2014-09-21
US20080080581A1 (en) 2008-04-03
CN101523623B (en) 2011-09-07
CN101523623A (en) 2009-09-02
BRPI0719765A2 (en) 2014-01-28
TW200836372A (en) 2008-09-01
BRPI0719765A8 (en) 2015-10-06

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